M54513FP Mitsumi Electronics, Corp., M54513FP Datasheet

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M54513FP

Manufacturer Part Number
M54513FP
Description
Manufacturer
Mitsumi Electronics, Corp.
Datasheet
1.M54513FP.pdf (3 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
M54513FP
Manufacturer:
MIT
Quantity:
20 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
M54513FP-200D
Manufacturer:
FUJITSU
Quantity:
6 262
DESCRIPTION
M54513P and M54513FP are eight-circuit transistor arrays.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
FEATURES
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M54513P and M54513FP each have eight circuits con-
sisting of NPN transistors. These ICs have resistance of 2
k
The GND is used in common in each circuit.
The transistors allow synchronous flow of 50mA collector
current. A maximum of 40V voltage can be applied between
the collector and emitter.
The M54513FP is enclosed in a molded small flat package,
enabling space-saving design.
High breakdown voltage (BV
Synchronizing current (Ic(max) = 50mA)
Wide operating temperature range (Ta = –20 to +75 C)
at inputs and of 13.6k
between the base and emitter.
CEO
40V)
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
PIN CONFIGURATION
CIRCUIT DIAGRAM
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
INPUT
INPUT
INPUT
Package type 20P2N-A(FP)
Package type 18P4G(P)
8-UNIT 50mA TRANSISTOR ARRAY
GND
GND
The eight circuits share the GND.
IN1
IN2
IN3
IN4
IN5
IN6
IN7
IN8
IN1
IN2
IN3
IN4
IN5
IN6
IN7
IN8
NC
2K
M54513P/FP
10
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
13.6K
18
17
16
15
14
13
12
11
10
19
18
17
16
15
14
13
12
11
20
NC
NC
O1
O2
O3
O4
O5
O6
O7
O8
NC
O1
O2
O3
O4
O5
O6
O7
O8
NC : No connection
NC : No connection
OUTPUT
GND
OUTPUT
OUTPUT
Unit :
Aug. 1999

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M54513FP Summary of contents

Page 1

... The GND is used in common in each circuit. The transistors allow synchronous flow of 50mA collector current. A maximum of 40V voltage can be applied between the collector and emitter. The M54513FP is enclosed in a molded small flat package, enabling space-saving design. MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54513P/FP 8-UNIT 50mA TRANSISTOR ARRAY ...

Page 2

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted –20 ~ +75 C) Symbol Parameter V Collector-emitter voltage CEO I Collector current C V Input voltage I P Power dissipation d T Operating temperature opr T Storage temperature stg RECOMMENDED OPERATING ...

Page 3

... TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics 2.0 M54513P 1.5 M54513FP 1.0 0 Ambient temperature Ta (°C) DC Amplification Factor Collector Current Characteristics 75° 25° Collector current Ic (mA) Input Characteristics –20°C ...

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