IRF6641PBF International Rectifier Corp., IRF6641PBF Datasheet

IRF6641PBF

Manufacturer Part Number

IRF6641PBF

Description

Manufacturer

International Rectifier Corp.

Datasheet

1.IRF6641PBF.pdf (9 pages)

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Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

‚

Description

The IRF6641PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET

package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,

infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods

and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving

previous best thermal resistance by 80%.

The IRF6641PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for wide range 36V-

75V input voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance

enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal

for high performance isolated DC-DC converters.

www.irf.com

Absolute Maximum Ratings

RoHS Compliant

Lead-Free (Qualified up to 260°C Reflow)

Application Specific MOSFETs

Ideal for High Performance Isolated Converter

Optimized for Synchronous Rectification

Low Conduction Losses

High Cdv/dt Immunity

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Techniques

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

@ T

Primary Switch Socket

200

180

160

140

120

100

= 25°C

= 70°C

= 25°C

Fig 1. Typical On-Resistance vs. Gate Voltage

V GS,

Gate -to -Source Voltage (V)

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

T J = 125°C

T J = 25°C

Ãg

I D = 5.5A

Parameter

@ 10V

„

…

†

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

measured with thermocouple mounted to top (Drain) of part.

12.0

10.0

8.0

6.0

4.0

2.0

0.0

Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage

= 25°C, L = 0.77mH, R

I D = 5.5A

200V max ±20V max

DirectFET™ Power MOSFET ‚

IRF6641TRPbF

34nC

Q G , Total Gate Charge (nC)

g tot

DSS

V DS = 160V

V DS = 100V

V DS = 40V

Max.

200

±20

4.6

3.7

9.5nC

= 25Ω, I

DirectFET™ ISOMETRIC

= 11A.

51mΩ@ 10V

4.0V

DS(on)

gs(th)

packaging

Units

11/14/07

Related parts for IRF6641PBF

IRF6641PBF Summary of contents

Page 1

... The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6641PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for wide range 36V- 75V input voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters ...

Page 2

Electrical Characteristic @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation 25°C Power Dissipation Peak Soldering Temperature P Operating Junction and Storage Temperature ...

Page 4

VGS TOP 15V 10V 8.0V BOTTOM 7.0V 10 ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 100 150° 25°C ...

Page 5

150° 25° -40° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

Page 6

Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. 3mA I G Current Sampling Resistors Fig 14a. Gate Charge Test Circuit D.U 20V GS 0.01 Ω Fig ...

Page 7

D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 18. DirectFET™ Substrate and PCB Layout, MZ Outline (Medium Size Can, Z-Designation). Please see DirectFET application note AN-1035 for all details regarding the ...

Page 8

DirectFET™ Outline Dimension, MZ Outline (Medium Size Can, Z-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS METRIC IMPERIAL CODE ...

Page 9

DirectFET™ Tape & Reel Dimension (Showing component orientation). IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com LOADED TAPE FEED DIRECTION DIMENSIONS METRIC MIN CODE MIN MAX 0.311 A 7.90 8.10 0.154 B 3.90 ...

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