IRF7341Q International Rectifier Corp., IRF7341Q Datasheet
IRF7341Q
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IRF7341Q Summary of contents
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... Parameter R Maximum Junction-to-Ambient θJA www.irf.com HEXFET V DSS 55V Top View @ 10V GS @ 10V GS ƒ ƒ See Fig. 14, 15, 16 Max. ƒ IRF7341Q ® Power MOSFET R max I DS(on) D 0.050@V = 10V 5.1A GS 0.065@V = 4.5V 4.42A SO-8 Max. Units ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ° 175 20µs PULSE WIDTH ...
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0V MHZ C iss = 1200 SHORTED C rss = C gd 1000 C oss = Ciss 800 600 400 Coss 200 ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE ...
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7.1A 0.030 0.020 2.0 4.0 6.0 8.0 10.0 V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge Fig 13a. ...
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Duty Cycle = Single Pulse 10 0.01 1 0.05 0.10 0.1 0.01 0.001 1.0E-06 1.0E-05 1.0E-04 Fig 15. Typical Avalanche Current Vs.Pulsewidth 140 TOP Single Pulse BOTTOM 10% Duty Cycle 120 5.1A 100 ...
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SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...
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SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...