IRF7342TR International Rectifier Corp., IRF7342TR Datasheet
IRF7342TR
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IRF7342TR Summary of contents
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Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. ...
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IRF7342 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VGS TOP -15V -12V -10V -8.0V -6.0V -4.5V -4.0V -3.5V BOTTOM -3.0V 10 -3.0V 1 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...
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IRF7342 2.0 -3 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature ( C) J Fig 5. Normalized On-Resistance Vs. Temperature ...
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1MHz iss rss 960 oss iss 720 480 C oss 240 C rss ...
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IRF7342 SO-8 Package Details 0 ...
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Tape and Reel . . ...