LH28F016SUT-N80 Sharp, LH28F016SUT-N80 Datasheet

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LH28F016SUT-N80

Manufacturer Part Number
LH28F016SUT-N80
Description
LH28F016SUT-N80 2M (256K x 8)Flash Memory
Manufacturer
Sharp
Datasheet
LH28F020SU-N
FEATURES
256K × 8 Bit Configuration
5 V Write/Erase Operation (5 V V
– No Requirement for DC/DC Converter to
80 ns Maximum Access Time
16 Independently Lockable Blocks (16K)
100,000 Erase Cycles per Block
Automated Byte Write/Block Erase
– Command User Interface
– Status Register
System Performance Enhancement
– Erase Suspend for Read
– Two-Byte Write
– Full Chip Erase
Data Protection
– Hardware Erase/Write Lockout during
– Software Erase/Write Lockout
Independently Lockable for Write/Erase on
Each Block (Lock Block and Protect
Set/Reset)
5 µA (TYP.) I
State-of-the-Art 0.55 µm ETOX™ Flash
Technology
Packages
– 32-Pin, 525 mil. SOP Package
– 32-Pin, 1.2 mm × 8 mm × 20 mm
Write Erase
Power Transitions
TSOP (Type I) Package
CC
in CMOS Standby
PP
)
32-PIN TSOP
32-PIN SOP
V
V
WE
A
A
A
A
A
A
A
GND
A
A
CC
A
A
A
A
DQ
DQ
PP
DQ
13
14
17
16
15
12
11
V
A
A
A
9
8
7
6
5
4
A
A
A
A
A
A
A
A
PP
16
15
12
7
5
4
2
0
0
2
6
3
1
1
Figure 1. TSOP Configuration
10
12
13
14
15
16
11
Figure 2. SOP Configuration
2
3
4
5
6
7
8
9
1
10
12
13
14
15
16
11
2
3
4
5
6
7
8
9
1
2M (256K × 8) Flash Memory
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
28F020SUN80-20
OE
CE
TOP VIEW
A
DQ
DQ
DQ
DQ
DQ
GND
DQ
DQ
DQ
A
A
A
A
TOP VIEW
28F020SUN80-1
10
0
1
2
3
DQ
DQ
DQ
DQ
DQ
V
WE
A
A
A
A
A
A
OE
A
CE
CC
7
6
5
4
3
2
1
0
17
14
13
8
9
11
10
7
6
5
4
3
1

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LH28F016SUT-N80 Summary of contents

Page 1

LH28F020SU-N FEATURES • 256K × 8 Bit Configuration • Write/Erase Operation ( – No Requirement for DC/DC Converter to Write Erase • Maximum Access Time • 16 Independently Lockable Blocks (16K) • 100,000 Erase ...

Page 2

LH28F020SU-N OUTPUT MULTIPLEXER INPUT BUFFER Y-DECODER ADDRESS X-DECODER QUEUE LATCH ADDRESS COUNTER OUTPUT BUFFER ID QUEUE REGISTER REGISTER CSR ESRs DATA COMPARATOR Y GATING/SENSING . . . . . ...

Page 3

... GND SUPPLY GROUND FOR ALL INTERNAL CIRCUITRY: Do not leave any ground pins floating. INTRODUCTION Sharp’s LH28F020SU-N 2M Flash Memory is a revo- lutionary architecture which enables the design of truly mobile, high performance, personal computing and com- munication products. With innovative capabilities, 5.0 V single voltage operations and very high read/write per- ...

Page 4

LH28F020SU-N The LH28F020SU-N will be available in a 32-pin, 1.2 mm thick × TSOP (Type I) package. This form factor and pinout allow for very high board layout densities. A Command User Interface (CUI) serves as ...

Page 5

Flash Memory MEMORY MAP BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS Bus Operations » » MODE CE OE Read Output Disable Standby Manufacturer ID V ...

Page 6

LH28F020SU-N LH28F008SA - Compatible Mode Command Bus Definitions COMMAND OPER. Read Array Write Intelligent Identifier Write Read Compatible Status Write Register Clear Status Register Write Byte Write Write Alternate Byte Write Write Block Erase/Confirm Write Erase Suspend/Resume Write ADDRESS DATA ...

Page 7

Flash Memory LH28F020SUT-N Performance Enhancement Command Bus Definitions FIRST BUS CYCLE COMMAND OPER. ADD. Protect Set/Confirm Write X Protect Write X Reset/Confirm Lock Block/Confirm Write X Erase All Unlocked Write X Blocks Two-Byte Write Write X ...

Page 8

... Set Write Protect command must be written to prohibit Write/Erase operation to each block. There are unassigned commands not recom- mended that the customer use any command other than the valid commands specified in “Command Bus Defi- nitions”. Sharp reserves the right to redefine these codes for future functions. ...

Page 9

Flash Memory 2M Flash Memory Algorithm Flowcharts START WRITE 40H or 10H WRITE DATA/ADDRESS READ COMPATIBLE STATUS REGISTER 0 CSR CSR FULL STATUS CHECK IF DESIRED OPERATION COMPLETE CSR FULL STATUS CHECK PROCEDURE READ ...

Page 10

LH28F020SU-N START WRITE 20H WRITE D0H AND BLOCK ADDRESS READ COMPATIBLE STATUS REGISTER NO 0 SUSPEND CSR.7 = ERASE 1 CSR FULL STATUS CHECK IF DESIRED OPERATION COMPLETE CSR FULL STATUS CHECK PROCEDURE READ CSRD (see above) 0 ERASE CSR.4, ...

Page 11

Flash Memory START WRITE B0H READ COMPATIBLE STATUS REGISTER 0 CSR CSR.6 = ERASE COMPLETED 1 WRITE FFH READ ARRAY DATA DONE NO READING YES WRITE D0H WRITE FFH ERASE RESUMED READ ARRAY ...

Page 12

LH28F020SU-N START READ COMPATIBLE STATUS REGISTER 0 CSR RESET WP READ COMPATIBLE STATUS REGISTER 0 CSR WRITE 77H WRITE D0H AND BLOCK ADDRESS READ COMPATIBLE STATUS REGISTER 0 CSR (NOTE) 1 CSR. ...

Page 13

Flash Memory START RESET WP (NOTE 1) ERASE BLOCK (NOTE 2) SET WP (NOTE 3) WRITE NEW DATA TO BLOCK (NOTE 4) RELOCK BLOCK (NOTE 5) OPERATION COMPLETE FLOW TO REWRITE DATA NOTES: 1. Use Reset-Write-Protect ...

Page 14

LH28F020SU-N START READ COMPATIBLE STATUS REGISTER 0 CSR WRITE FBH WRITE DATA/A 0 WRITE DATA/ADDRESS READ COMPATIBLE STATUS REGISTER 0 CSR (NOTE) 1 CSR. ANOTHER YES 2-BYTE WRITE NO OPERATION COMPLETE Figure 10. ...

Page 15

Flash Memory START WRITE A7H WRITE D0H READ COMPATIBLE STATUS REGISTER NO 0 SUSPEND CSR.7 = ERASE 1 CSR FULL STATUS CHECK IF DESIRED OPERATION COMPLETE CSR FULL STATUS CHECK PROCEDURE READ CSRD (see above) 0 ...

Page 16

LH28F020SU-N START READ COMPATIBLE STATUS REGISTER 0 CSR WRITE 57H WRITE CONFIRM DATA/ADDRESS READ COMPATIBLE STATUS REGISTER 0 CSR (NOTE) CSR. OPERATION COMPLETE 16 BUS COMMAND OPERATION Read Write Set Write Protect ...

Page 17

Flash Memory START READ COMPATIBLE STATUS REGISTER 0 CSR WRITE 47H WRITE CONFIRM DATA/ADDRESS READ COMPATIBLE STATUS REGISTER 0 CSR (NOTE) CSR. OPERATION COMPLETE BUS COMMAND OPERATION Read ...

Page 18

LH28F020SU-N ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings* Temperature Under Bias ....................... 0° 80°C Storage Temperature ........................ -65° 125°C SYMBOL PARAMETER T Operating Temperature, Commercial with Respect to GND Supply Voltage with ...

Page 19

Flash Memory Timing Nomenclature For 3.3 V systems use the standard JEDEC cross point definitions. Each timing parameter consists of 5 characters. Some common examples are defined below time (t) from CE     ...

Page 20

LH28F020SU-N DC Characteristics V = 5.0 V ± 0 0°C to +70° SYMBOL PARAMETER I Input Load Current IL Output Leakage I LO Current I V Standby Current CCS Read Current ...

Page 21

Flash Memory DC Characteristics (Continued 5.0 V ± 0 0°C to +70° SYMBOL PARAMETER I V Read Current PPR Write Current PPW Erase ...

Page 22

LH28F020SU-N AC Characteristics - Read Only Operations V = 5.0 V ± 0 0°C to +70° SYMBOL PARAMETER t Read Cycle Time AVAV t Address Setup to OE » Going Low AVGL t Address to ...

Page 23

Flash Memory V CC POWER-UP STANDBY V IH ADDRESSES ( ( ( ( HIGH-Z OH DATA (D/Q) V ...

Page 24

LH28F020SU-N POWER-UP AND RESET TIMINGS SYMBOL PARAMETER t WE Low 4.5 V MIN. WLPL CC t Address Valid to Data Valid for V AVQV t WE High to Data Valid for V PHQV » Setup ...

Page 25

Flash Memory AC Characteristics for WE     » - Controlled Command Write Operations V = 5.0 ± 0 0° to 70° SYMBOL PARAMETER t Write Cycle Time AVAV t V ...

Page 26

LH28F020SU-N WRITE DATA-WRITE OR ERASE SETUP COMMAND V ADDRESSES (A) IH (NOTE AVAV ( WHEH t ELWL ( ( ...

Page 27

Flash Memory AC Characteristics for CE     » - Controlled Command Write Operations V = 5.0 V ± 0 0°C to +70° SYMBOL PARAMETER t Write Cycle Time AVAV » ...

Page 28

LH28F020SU-N WRITE DATA-WRITE OR ERASE SETUP COMMAND V ADDRESSES (A) IH (NOTE AVAV ( EHWH t WLEL ( ( ...

Page 29

Flash Memory Erase and Byte Write Performance V = 5.0 V ± 0 0°C to +70° SYMBOL PARAMETER 1 t Byte Write Time WHRH 2 t Two-Byte Serial Write Time WHRH ...

Page 30

LH28F020SU-N 32TSOP (TSOP032-P-0820) 0.10 [0.004] M 0.30 [0.012] 0.50 [0.020] 0.10 [0.004] TYP 18.60 [0.732] 18.20 [0.717 8.20 [0.323] 7.80 [0.307] 0.15 [0.006] 0.425 [0.017] 0.10 [0.004] MAXIMUM LIMIT DIMENSIONS IN MM [INCHES] MINIMUM LIMIT ORDERING ...

Page 31

... Product which fails during the warranty period because of such defect (if Customer promptly reported the failure to SHARP in writing) or, (ii) if SHARP is unable to repair or replace, SHARP will refund the purchase price of the Product upon its return to SHARP . This warranty does not apply to any Product which has been subjected to misuse, abnormal service or handling, or which has been altered or modified in design or construction, or which has been serviced or repaired by anyone other than SHARP ...

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