BR93LC46 Rohm, BR93LC46 Datasheet
BR93LC46
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BR93LC46 Summary of contents
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... Data Retention • Overview The BR93LC46 series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words data read from it and written to it. Operation control is performed using five types of commands. The commands, addresses, and data are input through the DI pin under the control of the CS and SK pins write operation, the internal status signal (READY or BUSY) can be output from the DO pin. • ...
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... Reduced by 3.0mW for each increase over 25 C. • Recommended operating conditions (Ta = 25°C) Parameter Symbol Writing Power supply V CC voltage Reading Input voltage BR93LC46 / BR93LC46F / BR93LC46RF / BR93LC46FV Write disable Address 6bit buffer Data 16bit register Limits V – 500 ...
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... Output low level voltage Output high level voltage OH I Input leakage current LI I Output leakage current LO Operating current I CC2 dissipation 2 Standby current I SB BR93LC46 / BR93LC46F / BR93LC46RF / BR93LC46FV Min. Typ. Max. Unit – 0.3 — 0.8 2.0 — 0.3 CC — — 0.4 2.4 — — — ...
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... DI hold time Data "1" output delay time Data "0" output delay time Time from CS to output confirmation Time from CS to output High impedance Write cycle time 4 BR93LC46 / BR93LC46F / BR93LC46RF / BR93LC46FV Command 1 Read (READ) Write enabled (WEN) 2 Write (WRITE) Write all addresses (WRAL) ...
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... CS "L" time CS setup time DI setup time CS hold time DI hold time Data "1" output delay time Data "0" output delay time Time from CS to output high impedance Not designed for radiative rays. BR93LC46 / BR93LC46F / BR93LC46RF / BR93LC46FV Symbol Min. Typ. f — — — ...
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... Also, DO must HIGH-Z state when CS is LOW. • After the completion of each mode, make sure that CS is set to LOW, to reset the internal circuit, before changing modes. 6 BR93LC46 / BR93LC46F / BR93LC46RF / BR93LC46FV t t ...
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... HIGH state during automatic incrementing High Z BR93LC46 / BR93LC46F / BR93LC46RF / BR93LC46FV off. However, read commands can be used in either the write enable or write disable state. (6) Write (Figure 4) This command writes the input 16-bit data (D15 to D0) to the specified address (A5 to A0). Actual writing of ...
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... To avoid this, make sure that DI = LOW when CS = HIGH. (Caution is especially important when common input ports are used.) This applies to all of the write commands High Z 8 BR93LC46 / BR93LC46F / BR93LC46RF / BR93LC46FV D15 D14 Fig. 4 Write cycle timing (WRITE) ...
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... Start bit 1 bit a: Canceled by setting CS LOW Cannot be canceled by any method designated address is not secured. V OFF (V CC BR93LC46 / BR93LC46F / BR93LC46RF / BR93LC46FV Operating code Address 2 bits 6 bits Cancel can be performed for the entire read mode space Cancellation method: CS LOW Operating code ...
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... Also, to prevent erroneous writing at low voltages, these ICs are equipped with a built-in circuit (V out circuit) which resets the write command if V drops to approximately 2V or lower (typ With the BR93LC46A, the circuit is tripped at approximately 3V or less (typ GND ...
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... Memory ICs (6) Connecting DI and DO directly The BR93LC46 have an independent input pin (DI) and output pin (DO). These are treated as individual signals on the timing chart but can be controlled through one control line. Control can be initiated on a single control line by inserting a resistor R. COM IO port R Fig. 11 Common connections for the DI and DO control line ...
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... Memory ICs • External dimension (Units: mm) BR93LC46 9.3 0 7.62 2.54 0.5 0 DIP8 BR93LC46FV 3.0 0 0.65 0.22 0.1 (0.52) SSOP-B8 12 BR93LC46 / BR93LC46F / BR93LC46RF / BR93LC46FV BR93LC46F / RF 0.3Min. 0.1 5.0 0 1.27 0.4 0.1 0.3Min. 0.15 SOP8 ...