K4S511632D-UC75 Samsung, K4S511632D-UC75 Datasheet
K4S511632D-UC75
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K4S511632D-UC75 Summary of contents
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... ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply ...
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SDRAM 512Mb D-die (x4, x8, x16) Table of Contents 1.0 Features ....................................................................................................................................... 4 2.0 General Description.................................................................................................................... 4 3.0 Ordering Information .................................................................................................................. 4 4.0 Package Physical Dimension ................................................................................................... 5 5.0 Functional Block Diagram.......................................................................................................... 6 6.0 Pin Configuration (Top view) ..................................................................................................... 7 ...
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SDRAM 512Mb D-die (x4, x8, x16) Revision History Revision Month 0.0 May 1.0 November Year 2005 - First release 2005 - Revision 1.0 CMOS SDRAM History Rev. 1.0 November. 2005 ...
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... General Description The K4S510432D / K4S510832D / K4S511632D is 536,870,912 bits synchronous high data rate Dynamic RAM organized 33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high perfor- mance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle ...
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SDRAM 512Mb D-die (x4, x8, x16) 4.0 Package Physical Dimension #54 #1 0.10 MAX 0.004 0. 0.028 #28 #27 22.62 MAX 0.891 22.22 ± 0.10 0.21 0.875 ± 0.004 0.008 +0.10 0.30 0.80 -0.05 +0.004 0.0315 0.012 -0.002 ...
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... Bank Select CLK ADD LCKE LRAS LCBR CLK CKE * Samsung Electronics reserves the right to change products or specification without notice. Data Input Register 32Mx4 / 16Mx8 / 8Mx16 32Mx4 / 16Mx8 / 8Mx16 32Mx4 / 16Mx8 / 8Mx16 32Mx4 / 16Mx8 / 8Mx16 Column Decoder Latency & Burst Length Programming Register ...
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SDRAM 512Mb D-die (x4, x8, x16) 6.0 Pin Configuration (Top view) x8 x16 DQ0 DQ0 V V DDQ DDQ DQ1 N.C DQ2 DQ1 V V SSQ SSQ DQ3 N.C DQ4 DQ2 V V DDQ DDQ DQ5 ...
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SDRAM 512Mb D-die (x4, x8, x16) 8.0 Absolute Maximum Ratings Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur ...
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SDRAM 512Mb D-die (x4, x8, x16) 11.0 DC Characteristics (x4) Parameter Symbol Operating current I CC1 (One bank active CC2 Precharge standby current in power-down mode PS CKE & CLK ≤ CC2 I N CC2 Precharge ...
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SDRAM 512Mb D-die (x4, x8, x16) 12.0 DC Characteristics (x8) Parameter Symbol Operating current I CC1 (One bank active Precharge standby current in CC2 power-down mode PS CKE & CLK ≤ CC2 I N CC2 Precharge ...
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... Refresh current I CC5 Self refresh current I CC6 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S511632D-UC 4. K4S511632D-UL 5. Unless otherwise noted, input swing IeveI is CMOS(V (Recommended operating condition unless otherwise noted, T Test Condition Burst length = 1 ≥ (min CKE ≤ ...
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... All parts allow every cycle column address change case of row precharge interrupt, auto precharge and read burst stop 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported. SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP. 1200Ω V (DC) = 2.4V, I ...
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SDRAM 512Mb D-die (x4, x8, x16) 16.0 AC Characteristics Parameter CAS latency=3 CLK cycle time CAS latency=2 CAS latency=3 CLK to valid output delay CAS latency=2 CAS latency=3 Output data hold time CAS latency=2 CLK high pulse width CLK low ...
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SDRAM 512Mb D-die (x4, x8, x16) 18.0 IBIS Specification I Characteristics (Pull-up) OH 100MHz 100MHz Voltage 133MHz 133Mhz Min Max (V) I (mA) I (mA) 3.45 -2.4 3.3 -27.3 3.0 0.0 -74.1 2.6 -21.1 -129.2 2.4 -34.1 -153.3 2.0 -58.7 ...
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SDRAM 512Mb D-die (x4, x8, x16) V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) DD 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4 ...
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SDRAM 512Mb D-die (x4, x8, x16) 19.0 Simplified Truth Table Command Register Mode register set Auto refresh Entry Refresh Self refresh Exit Bank active & row addr. Read & Auto precharge disable column address Auto precharge enable Write & Auto ...