K6F8016U6B-EF70 Samsung, K6F8016U6B-EF70 Datasheet
K6F8016U6B-EF70
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K6F8016U6B-EF70 Summary of contents
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... K6F8016U6B Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft 1.0 Finalize - I change : 30mA to 28mA for 55ns product CC2 25mA to 22mA for 70ns product The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products ...
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... SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. GENERAL DESCRIPTION The K6F8016U6B families are fabricated by SAMSUNG s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current ...
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... K6F8016U6B Family PRODUCT LIST Part Name K6F8016U6B-EF55 K6F8016U6B-EF70 FUNCTIONAL DESCRIPTION ...
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... K6F8016U6B Family RECOMMENDED DC OPERATING CONDITIONS Item Supply voltage Ground Input high voltage Input low voltage Note =- otherwise specified Overshoot: V +2.0V in case of pulse width 20ns Undershoot: -2.0V in case of pulse width 20ns. 4. Overshoot and undershoot are sampled, not 100% tested. ...
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... K6F8016U6B Family AC OPERATING CONDITIONS TEST CONDITIONS (Test Load and Input/Output Reference) Input pulse level: 0.4 to 2.2V Input rising and falling time: 5ns Input and output reference voltage: 1.5V Output load(see right): C =100pF+1TTL L C =30pF+1TTL L AC CHARACTERISTICS (Vcc=2.7~3.3V, Industrial product: T Parameter List Read Cycle Time ...
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... K6F8016U6B Family TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) Address Data Out Previous Data Valid TIMING WAVEFORM OF READ CYCLE(2) Address UB Data out High-Z NOTES (READ CYCLE and are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage ...
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... K6F8016U6B Family TIMING WAVEFORM OF WRITE CYCLE(1) Address UB Data in Data Undefined Data out TIMING WAVEFORM OF WRITE CYCLE(2) Address UB Data in Data out (WE Controlled CW( WP(1) t AS( High-Z t WHZ (CS Controlled AS(3) CW( WP( ...
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... K6F8016U6B Family TIMING WAVEFORM OF WRITE CYCLE(3) Address UB Data in High-Z Data out NOTES (WRITE CYCLE wri e occurs during the overlap low for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest tran- sition when CS goes high and WE goes high ...
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... K6F8016U6B Family PACKAGE DIMENSION 48 TAPE BALL GRID ARRAY(0.75mm ball pitch) Top View B #A1 Side View D C Min Typ A - 0.75 B 5.90 6. 3.75 C 6.90 7. 5.25 D 0.40 0.45 E 0.80 0. 0.58 E2 0.27 0. Bottom View Detail A Max - Notes. 6.10 1. Ball counts: 48(8 row x 6 column) 2. Ball pitch: (x,y)=(0.75 x 0.75)(typ ...