K6T0808C1D-GF70

Manufacturer Part NumberK6T0808C1D-GF70
Description70ns, 32Kx8 bit low low power CMOS static RAM
ManufacturerSamsung
K6T0808C1D-GF70 datasheet
 


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K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No
History
0.0
Initial draft
0.1
First revision
-
M62256DL/DLI I
= 100
K
SB1
KM62256DL-L I
= 20
SB1
KM62256DLI-L I
= 50
SB1
- C
= 6
8pF, C
= 8
IN
IO
- KM62256D-4/5/7 Family
tOH = 5
10ns
- KM62256DL/DLI I
= 50 30 A
DR
KM62256DL-L/DLI-L I
DR
1.0
Finalize
- Remove I
write value
CC
- Improved operating current
I
= 70
60mA
CC2
- Improved standby current
KM62256DL/DLI I
= 50
SB1
KM62256DL-L I
= 10
SB1
KM62256DLI-L I
= 15
SB1
- Improved data retention current
KM62256DL/DLI I
= 30
DR
KM62256DL-L/DLI-L I
DR
- Remove 45ns part from commercial product and 100ns part
from industrial product.
Replace test load 100pF to 50pF for 55ns part
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
50 A
10 A
15 A
10pF
= 30
15 A
30 A
5 A
5 A
5 A
= 15
3 A
CMOS SRAM
Draft Data
Remark
May 18, 1997
Design target
April 1, 1997
Preliminily
November 11, 1997
Final
Revision 1.0
November 1997

K6T0808C1D-GF70 Summary of contents