K6T1008V2C-TB70

Manufacturer Part NumberK6T1008V2C-TB70
ManufacturerSamsung
K6T1008V2C-TB70 datasheet
 


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K6T1008V2C, K6T1008U2C Family
Document Title
128K x8 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No.
History
0.0
Initial draft
1.0
Finalize
- Increased I
, I
SB
DR
Commercial part = 10 A
Industrial part = 20
2.0
Revise
- Change speed bin
KM68V1000C Family: 70/85ns
KM68U1000C Family: 70/100ns
- Improved operating current: 40mA
- Improved power dissipation
P
: 0.7W
1.0W
D
- Improved standby current
Extended/Industrial: 20
- VIL: 0.4V
0.6V
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
A
70/100ns
85/100ns
35mA
10
A
1
CMOS SRAM
Draft Data
Remark
July 3, 1996
Preliminary
December 16, 1996
Final
November 25, 1997
Final
Revision 2.0
November 1997

K6T1008V2C-TB70 Summary of contents