K6T4016C3C-TF70 Samsung, K6T4016C3C-TF70 Datasheet
K6T4016C3C-TF70
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K6T4016C3C-TF70 Summary of contents
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... K6T4016C3C Family Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History Revision No. History 0.0 Initial draft 1.0 Finalize The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. ...
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... SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. GENERAL DESCRIPTION The K6T4016C3C families are fabricated by SAMSUNG s advanced CMOS process technology. The families support various operating temperature ranges and small package types for user flexibility of system design. The families also support low data retention voltage for battery back-up opera- tion with low data retention current ...
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... Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Industrial Temperature Products(-40~85 C) Function Part Name K6T4016C3C-TF55 K6T4016C3C-TF70 K6T4016C3C-RF55 K6T4016C3C-RF70 UB I/O I/O ...
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... K6T4016C3C Family RECOMMENDED DC OPERATING CONDITIONS Item Supply voltage Ground Input high voltage Input low voltage Note: 1. Commercial Product otherwise specified A Industrial Product otherwise specified A 2. Overshoot: V +3.0V in case of pulse width CC 3. Undershoot: -3.0V in case of pulse width 30ns 4. Overshoot and undershoot are sampled, not 100% tested. ...
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... K6T4016C3C Family AC OPERATING CONDITIONS TEST CONDITIONS (Test Load and Test Input/Output Reference) Input pulse level: 0.8 to 2.4V Input rising and falling time: 5ns Input and output reference voltage: 1.5V Output load (See right): C =100pF+1TTL L 50pF+1TTL 1. for 55ns product AC CHARACTERISTICS ( Vcc=4.5~5.5V, Commercial product : T Parameter List ...
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... K6T4016C3C Family TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) Address Data Out Previous Data Valid TIMING WAVEFORM OF READ CYCLE(2) Address CS UB Data out High-Z NOTES (READ CYCLE and are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage ...
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... K6T4016C3C Family TIMING WAVEFORM OF WRITE CYCLE(1) Address CS UB Data in Data Undefined Data out TIMING WAVEFORM OF WRITE CYCLE(2) Address CS UB Data in Data out (WE Controlled CW( WP(1) t AS(3) t High-Z t WHZ (CS Controlled AS(3) CW( WP( High-Z 7 CMOS SRAM ...
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... K6T4016C3C Family TIMING WAVEFORM OF WRITE CYCLE(3) Address CS UB Data in Data out NOTES (WRITE CYCLE wri e occurs during the overlap for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest transi- tion when CS goes high and WE goes high. The t 2 ...
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... K6T4016C3C Family PACKAGE DIMENSIONS 44 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400F) #44 #1 18.81 MAX. 0.741 18.41 0.725 0.004 0.35 0.805 0. 0.032 0.014 0.004 44 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400R) #1 #44 18.81 MAX. 0.741 18.41 0.725 0.35 0.805 0. 0.032 0.014 0.004 #23 11.76 0.20 0.463 0.008 #22 1.00 0.10 0.039 0.004 1.20 MAX. 0.047 ...