TE28F640J3A-150

Manufacturer Part NumberTE28F640J3A-150
DescriptionTE28F640J3A-150Intel StrataFlash Memory (J3)
ManufacturerIntel Corporation
TE28F640J3A-150 datasheet
 
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Page 27/72:

Configuration Performance

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7.3
Block Erase, Program, and Lock-Bit Configuration
Performance
Table 10. Configuration Performance
#
Sym
Write Buffer Byte Program Time
W16
(Time to Program 32 bytes/16 words)
t
WHQV3
W16
Byte Program Time (Using Word/Byte Program Command)
t
EHQV3
Block Program Time (Using Write to Buffer Command)
t
WHQV4
W16
Block Erase Time
t
EHQV4
t
WHQV5
W16
Set Lock-Bit Time
t
EHQV5
t
WHQV6
W16
Clear Block Lock-Bits Time
t
EHQV6
t
WHRH1
W16
Program Suspend Latency Time to Read
t
EHRH1
t
WHRH
W16
Erase Suspend Latency Time to Read
t
EHRH
NOTES:
1. Typical values measured at T
= +25 °C and nominal voltages. Assumes corresponding lock-bits are
A
not set. Subject to change based on device characterization.
2. These performance numbers are valid for all speed versions.
3. Sampled but not 100% tested.
4. Excludes system-level overhead.
5. These values are valid when the buffer is full, and the start address is aligned on a 32-byte boundary.
6. Effective per-byte program time (t
WHQV1
7. Effective per-word program time (t
WHQV2
8. Max values are measured at worst case temperature and V
noted).
9. Max values are expressed at -25 °C/-40 °C.
10.Max values are expressed at 25 °C/-40 °C.
Datasheet
Parameter
Typ
218
210
0.8
1.0
64
0.5
25
26
, t
) is 6.8 µs/byte (typical).
EHQV1
, t
) is 13.6 µs/word (typical).
EHQV2
corner after 100k cycles (except as
CC
256-Mbit J3 (x8/x16)
(8)
Max
Unit
Notes
654
µs
1,2,3,4,5,6,7
630
µs
1,2,3,4
2.4
sec
1,2,3,4
5.0
sec
1,2,3,4
75/85
µs
1,2,3,4,9
0.70/1.4
sec
1,2,3,4,10
75/90
µs
1,2,3,9
35/40
µs
1,2,3,9
27