AM29F040B-120FC Advanced Micro Devices, AM29F040B-120FC Datasheet

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AM29F040B-120FC

Manufacturer Part Number
AM29F040B-120FC
Description
4 megabit CMOS 5.0 volt-only, uniform sector flash memory
Manufacturer
Advanced Micro Devices
Datasheet

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Part Number:
AM29F040B-120FC
Manufacturer:
AMD
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20 000
Am29F040B
4 Megabit (512 K x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Distinctive Characteristics
5.0 V
— Minimizes system level power requirements
Manufactured on 0.35 µm process technology
— Compatible with 0.5 µm Am29F040 device
High performance
— Access times as fast as 55 ns
Low power consumption
— 20 mA typical active read current
— 30 mA typical program/erase current
— 1 µA typical standby current (standard access
Flexible sector architecture
— 8 uniform sectors of 64 Kbytes each
— Any combination of sectors can be erased
— Supports full chip erase
— Sector protection:
time to active mode)
A hardware method of locking sectors to prevent
any program or erase operations within that
sector
PRELIMINARY
10% for read and write operations
Embedded Algorithms
— Embedded Erase algorithm automatically
— Embedded Program algorithm automatically
Minimum 1,000,000 program/erase cycles per
sector guaranteed
Package options
— 32-pin PLCC, TSOP, or PDIP
Compatible with JEDEC standards
— Pinout and software compatible with
— Superior inadvertent write protection
Data# Polling and toggle bits
— Provides a software method of detecting
Erase Suspend/Erase Resume
— Suspends a sector erase operation to read data
preprograms and erases the entire chip or any
combination of designated sectors
writes and verifies bytes at specified addresses
single-power-supply Flash standard
program or erase cycle completion
from, or program data to, a non-erasing sector,
then resumes the erase operation
Publication# 21445
Issue Date: April 1998
Rev: B Amendment/+2

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AM29F040B-120FC Summary of contents

Page 1

... PRELIMINARY Am29F040B 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics 5.0 V 10% for read and write operations — Minimizes system level power requirements Manufactured on 0.35 µm process technology — Compatible with 0.5 µm Am29F040 device High performance — Access times as fast Low power consumption — ...

Page 2

... GENERAL DESCRIPTION The Am29F040B Mbit, 5.0 volt-only Flash mem- ory organized as 524,288 Kbytes of 8 bits each. The 512 Kbytes of data are divided into eight sectors of 64 Kbytes each for flexible erase capability. The 8 bits of data appear on DQ0–DQ7. The Am29F040B is offered in 32-pin PLCC, TSOP, and PDIP packages ...

Page 3

... Am29F040B -55 - Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer X-Decoder Am29F040B -90 -120 -150 90 120 150 90 120 150 DQ0–DQ7 Input/Output Buffers Data Latch STB Y-Gating Cell Matrix 21445B-1 ...

Page 4

... CC WE# A17 A14 A13 A11 A3 OE# A2 A10 A1 CE# A0 DQ7 DQ0 DQ6 DQ5 DQ4 DQ3 21445B-2 32-Pin Standard TSOP 32-Pin Reverse TSOP Am29F040B A14 6 28 A13 A11 PLCC A10 ...

Page 5

... Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory 5.0 V Read, Program, and Erase Valid Combinations Am29F040B-55 JC, JI, JE, EC, EI, EE, FC, FI, FE Am29F040B-70 Am29F040B-90 PC, PI, PE, JC, JI, JE, Am29F040B-120 EC, EI, EE, FC, FI, FE Am29F040B-150 LOGIC SYMBOL OPTIONAL PROCESSING ...

Page 6

... The command register it- self does not occupy any addressable memory loca- tion. The register is composed of latches that store the commands, along with the address and data informa- Table 1. Am29F040B Device Bus Operations Operation Read Write CMOS Standby ...

Page 7

... Command Defini- tions table. This method does not require V “Command Definitions” for details on using the autose- lect mode. Am29F040B , output from the device is IH Address Range 00000h–0FFFFh 10000h– ...

Page 8

... Table 3. Am29F040B Autoselect Codes (High Voltage Method) Description A18–A16 Manufacturer ID: AMD X Device ID: Am29F040B X Sector Protection Sector Verification Address Sector Protection/Unprotection The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously pro- tected sectors ...

Page 9

... DQ5 to “1”, or cause the Data# Polling algorithm to indicate the operation was suc- cessful. However, a succeeding read will show that the data is still “0”. Only erase operations can convert a “0” “1”. Am29F040B on address bit A9 ...

Page 10

... When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. The system can determine the sta- tus of the erase operation by using DQ7, DQ6, or DQ2. Refer to “Write Operation Status” for information on these status bits. Am29F040B ...

Page 11

... Command Sequence from System No Data = FFh? Erasure Completed Notes: 1. See the appropriate Command Definitions table for erase command sequence. 2. See “DQ3: Sector Erase Timer” for more information. Figure 2. Erase Operation Am29F040B START Data Poll Embedded Erase algorithm in progress Yes 21445B-7 11 ...

Page 12

... Table 4. Am29F040B Command Definitions Command Sequence (Note 1) Read (Note 5) 1 Reset (Note 6) 1 Manufacturer ID 4 Autoselect Device ID 4 (Note 7) Sector Protect Verify 4 (Note 8) Program 4 Chip Erase 6 Sector Erase 6 Erase Suspend (Note 9) 1 Erase Resume (Note 10) 1 Legend Don’t care RA = Address of the memory location to be read. ...

Page 13

... During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 3. Data# Polling Algorithm Am29F040B Yes No Yes Yes No ...

Page 14

... Figure 4). DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1.” This is a failure condition that indicates the program or erase cycle was not successfully completed. Am29F040B ...

Page 15

... Complete, Write Reset Command Notes: 1. Read toggle bit twice to determine whether or not it is toggling. See text. 2. Recheck toggle bit because it may stop toggling as DQ5 changes to “1”. See text. Figure 4. Toggle Bit Algorithm Am29F040B Note 1 No Yes Yes (Notes Yes ...

Page 16

... See “DQ5: Exceeded Timing Limits” for more information Table 5. Write Operation Status DQ7 (Note 1) DQ6 DQ7# Toggle 0 Toggle 1 No toggle Data Data DQ7# Toggle Am29F040B DQ5 DQ2 (Note 2) DQ3 (Note 1) 0 N/A No toggle 0 1 Toggle 0 N/A Toggle Data Data ...

Page 17

... +0.8 V –0.5 V –2.0 V Figure 5. Maximum Negative Overshoot to –2 0.5 V. During +2 +0.5 V 2.0 V Figure 6. Maximum Positive Overshoot C to +70 C ° ° Am29F040B 21445B-10 Waveform 21445B-11 Waveform 17 ...

Page 18

... VIL, = VIH Max, CE ± 12.0 mA Min –2.5 mA Min –100 Min Am29F040B Min Typ Max Unit ±1.0 µA 50 µA ±1.0 µ 0.4 1.0 mA –0.5 0 10.5 12.5 V 0. ...

Page 19

... Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels 21445B-12 INPUTS Steady Changing from Changing from Does Not Apply Center Line is High Impedance State (High Z) Am29F040B -55 All others Unit 1 TTL gate L 30 100 0.0–3.0 0.45– ...

Page 20

... Max IL Max Read Min Toggle and Min Data# Polling Max Min t RC Addresses Stable t ACC OEH t CE HIGH Z Figure 8. Read Operation Timings Am29F040B Speed Options (Note 1) -55 -70 -90 -120 -150 120 150 120 150 120 150 30 30 ...

Page 21

... See the “Erase And Programming Performance” section for more information Description -55 Min 55 Min Min 40 Min 25 Min Min Min Min Min Min 30 Min Typ Typ Min Am29F040B Speed Options -70 -90 -120 -150 Unit 70 90 120 150 ...

Page 22

... OUT Figure 9. Program Operation Timings 555h for chip erase WPH 55h 30h 10 for Chip Erase Am29F040B Read Status Data (last two cycles WHWH1 D Status OUT 21445B-14 Read Status Data WHWH2 In Complete Progress 21445B-15 ...

Page 23

... Complement Complement Status Data Status Data Valid Status Valid Status (first read) (second read) Am29F040B VA High Z True Valid Data High Z True Valid Data 21445B- Valid Status Valid Data (stops toggling) 21445B-17 23 ...

Page 24

... Erase Suspend Suspend Read Program Figure 13. DQ2 vs. DQ6 Description -55 Min 55 Min Min 40 Min 25 Min Min Min Min Min 30 Min 20 Typ Typ Am29F040B Erase Resume Erase Erase Complete Read 21445B-18 Speed Options -70 -90 -120 -150 Unit 70 90 120 150 ...

Page 25

... Typ (Note 1) Max (Note 300 3.6 10.8 = 4.5 V (4.75 V for -55), 1,000,000 cycles. CC Am29F040B PA DQ7# D OUT = Array Data. OUT 21445B-19 Unit Comments sec Excludes 00h programming prior to erasure (Note 4) sec µs Excludes system-level overhead ...

Page 26

... 5.0 V, one pin at a time. CC Test Setup OUT Test Setup OUT Test Conditions 150 C 125 C Am29F040B Min Max –1 1 –100 mA +100 mA Typ Max Unit 6 7 Typ Max Unit 4 6 ...

Page 27

... .530 .580 16 SEATING PLANE .015 .016 .060 .022 .009 .015 .125 .140 .080 .095 SEATING PLANE .013 .021 .050 REF. Am29F040B .600 .625 .009 .015 .630 .700 0 10 16-038-S_AG PD 032 EC75 5-28-97 lv .042 .056 .400 REF. .490 .530 16-038FPO-5 PL 032 ...

Page 28

... PHYSICAL DIMENSIONS (continued) TS 032 32-Pin Standard Thin Small Package (measured in millimeters) Pin 1 I.D. 1 1.20 MAX 18.30 18.50 19.80 20. Am29F040B 0.95 1.05 7.90 8.10 0.50 BSC 0.05 0.15 0.08 16-038-TSOP-2 0.20 TS 032 DA95 0.10 3-25-97 lv 0.21 0.50 0.70 ...

Page 29

... PHYSICAL DIMENSIONS (continued) TSR032 32-Pin Reversed Thin Small Outline Package (measured in millimeters) Pin 1 I.D. 1 1.20 MAX 18.30 18.50 19.80 20. 0.50 0.70 Am29F040B 0.95 1.05 7.90 8.10 0.50 BSC 0.05 0.15 16-038-TSOP-2 0.08 TSR032 0.20 DA95 0.10 3-25-97 lv 0.21 29 ...

Page 30

... REVISION SUMMARY FOR AM29F040B Global Formatted for consistency with other 5.0 volt-only data data sheets. Revision B+1 AC Characteristics, Erase and Program Operations Added Note references Corrected the pa- WHWH1 rameter symbol for V Set-up Time ification minimum. Deleted the last row in table. ...

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