AM29LV017B-80REC Advanced Micro Devices, AM29LV017B-80REC Datasheet
AM29LV017B-80REC
Related parts for AM29LV017B-80REC
AM29LV017B-80REC Summary of contents
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... PRELIMINARY Am29LV017B 16 Megabit ( 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors Manufactured on 0.35 µ ...
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... GENERAL DESCRIPTION The Am29LV017B Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes. The device is offered in 48-ball FBGA and 40-pin TSOP packages. The byte-wide (x8) data appears on DQ7–DQ0. All read, program, and erase operations are accomplished using only a single power supply. The device can also be programmed in standard EPROM programmers ...
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... =3.0–3 2.7–3 Sector Switches Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer X-Decoder Am29LV017B Am29LV017B -80R -90 -120 80 90 120 80 90 120 – DQ0 DQ7 Input/Output Buffers Data ...
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... WE# RESET DQ5 A11 A12 A19 A10 A14 A13 A15 A16 A17 NC Am29LV017B A17 A20 38 37 A19 36 A10 DQ7 35 DQ6 34 DQ5 33 DQ4 DQ3 27 DQ2 26 DQ1 ...
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... Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150 C for prolonged periods of time. LOGIC SYMBOL 21 A0–A20 CE# OE# WE# RESET# Am29LV017B 8 DQ0–DQ7 RY/BY# 21415C-3 ...
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... SPEED OPTION See Product Selector Guide and Valid Combinations DEVICE NUMBER/DESCRIPTION Am29LV017B 16 Megabit ( 8-Bit) CMOS Flash Memory 3.0 Volt-only Read, Program, and Erase Valid Combinations list configurations planned to be sup- ported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations ...
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... The command register itself does not occupy any addressable memory location. The register is composed of latches that store the com- mands, along with the address and data information needed to execute the command. The contents of the Table 1. Am29LV017B Device Bus Operations Operation Read Write Standby ...
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... Refer to the AC Characteristics tables for RESET# pa- rameters and to Figure 14 for the timing diagram. Output Disable Mode When the OE# input disabled. The output pins are placed in the high imped- ance state. Am29LV017B in the DC Characteristics table CC4 RP ±0.3 V, the device RESET# is held CC4 ± ...
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... Table 2. Am29LV017B Sector Address Table Sector A20 A19 SA0 0 SA1 0 SA2 0 SA3 0 SA4 0 SA5 0 SA6 0 SA7 0 SA8 0 SA9 0 SA10 0 SA11 0 SA12 0 SA13 0 SA14 0 SA15 0 SA16 1 SA17 1 SA18 1 SA19 1 SA20 1 SA21 1 SA22 1 SA23 1 SA24 1 SA25 1 SA26 1 SA27 1 SA28 1 SA29 1 SA30 1 SA31 ...
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... When using programming equipment, the autoselect mode requires V (11 12 address pin ID A9. Address pins A6, A1, and A0 must be as shown in Table 3. Am29LV017B Autoselect Codes (High Voltage Method) Description CE# Manufacturer ID: AMD L Device ID: Am29LV017B L ...
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... Reset PLSCNT = 1 Increment PLSCNT No Yes PLSCNT = 1000? Yes Device failed Sector Unprotect Algorithm Am29LV017B START PLSCNT = 1 RESET Wait First Write Temporary Sector Cycle = 60h? Unprotect Mode Yes No All sectors protected? Yes ...
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... WE#. The internal state machine ray power-up. Am29LV017B CC Write Inhibit is less than V , the device does not ac- LKO ...
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... Typical timeout for full chip erase 2 N Max. timeout for byte/word write 2 N Max. timeout for buffer write 2 times typical Max. timeout per individual block erase 2 N Max. timeout for full chip erase 2 Am29LV017B Description Description N µs N µs (00h = not supported ...
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... Sector Temporary Unprotect Not Supported Supported Sector Protect/Unprotect scheme 01 = 29F040 mode 29F016 mode 29F400 mode 29LV800A mode Simultaneous Operation Not Supported Supported Burst Mode Type Not Supported Supported Page Mode Type Not Supported Word Page Word Page Am29LV017B N 14 ...
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... DQ7, DQ6, or RY/BY#. See “Write Operation Status” for information on these status bits. Any commands written to the device during the Em- bedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the program- ming operation. The Byte Program command se- Am29LV017B ID ...
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... Erase algorithm are ignored. Note that a hardware reset during the chip erase operation immediately ter- minates the operation. The Chip Erase command se- quence should be reinitiated once the device has returned to reading array data, to ensure data integrity. Am29LV017B START Write Program Command Sequence Data Poll ...
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... The system may also write the autoselect command sequence when the device is in the Erase Suspend mode. The device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the device exits the autoselect mode, the device reverts to Am29LV017B ...
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... START Write Erase Command Sequence Data Poll from System No Data = FFh? Erasure Completed Notes: 1. See Table 8 for erase command sequence. 2. See “DQ3: Sector Erase Timer” for more information. Figure 4. Erase Operation Am29LV017B Embedded Erase algorithm in progress Yes 21415C-7 18 ...
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... Table 8. Am29LV017B Command Definitions Command Sequence (Note 1) Addr Read (Note Reset (Note 6) 1 XXX Manufacturer ID 4 XXX Auto- Device ID 4 XXX select XXX Sector Protect (Note 7) 4 Verify (Note 8) XXX Byte Program 4 XXX Unlock Bypass 3 XXX Unlock Bypass Program 2 XXX ...
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... During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 5. Data# Polling Algorithm Am29LV017B Yes Yes PASS 21415C-8 20 ...
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... DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation still toggling, the device did not completed the operation successfully, and the system Am29LV017B ...
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... Complete, Write Reset Command Notes: 1. Read toggle bit twice to determine whether or not it is toggling. See text. 2. Recheck toggle bit because it may stop toggling as DQ5 changes to “1”. See text. Figure 6. Toggle Bit Algorithm Am29LV017B (Note 1) No Yes Yes (Notes Yes ...
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... Table 9 shows the outputs for DQ3. Table 9. Write Operation Status DQ7 DQ5 (Note 2) DQ6 (Note 1) DQ7# Toggle 0 0 Toggle toggle 0 Data Data Data DQ7# Toggle 0 Am29LV017B DQ2 DQ3 (Note 2) RY/BY# N/A No toggle 0 1 Toggle 0 N/A Toggle 1 Data Data 1 N/A N/A 0 ...
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... Operating ranges define those limits between which the func- tionality of the device is guaranteed +0.8 V –0.5 V –2 Figure 7. Maximum Negative Overshoot Waveform +0.5 V 2.0 V Figure 8. Maximum Positive Overshoot Waveform Am29LV017B 21415C- 21415C-11 24 ...
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... 4.0 mA min I = –2 min I = –100 µ min . Typical specifications are for V IH Am29LV017B Min Typ Max Unit 1.0 µA 35 µA 1.0 µ 0.2 5 µA 0.2 5 µA 0.2 5 µA –0.5 0.8 ...
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... Current vs. Time (Showing Active and Automatic Sleep Currents) CC1 Note 1000 1500 2000 Time Frequency in MHz Figure 10. Typical I vs. Frequency CC1 Am29LV017B 2500 3000 3500 3 4000 21415C-12 5 21415C-13 26 ...
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... Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels 21415C-14 INPUTS Steady Changing from Changing from Does Not Apply Center Line is High Impedance State (High Z) Measurement Level Am29LV017B -80R -90, -120 Unit 1 TTL gate L 30 100 0.0–3 ...
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... Test Setup Read Toggle and Data# Polling t RC Addresses Stable t ACC OEH t CE HIGH Z Output Valid Figure 13. Read Operations Timings Am29LV017B Speed Option -80R -90 -120 Min 80 90 120 IL Max 80 90 120 IL Max 80 90 120 IL Max 30 ...
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... Test Setup Ready Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms t Ready t RP Figure 14. RESET# Timings Am29LV017B All Speed Options Unit Max 20 µs Max 500 ns Min 500 ns Min 50 ns Min 20 µ ...
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... See the “Erase and Programming Performance” section for more information -80R Min 80 Min Min 45 Min 35 Min Min Min Min Min Min 35 Min Typ Typ Min Min Min Am29LV017B -90 -120 Unit 90 120 ...
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... OUT Figure 15. Program Operation Timings 555h for chip erase WPH 55h 30h 10 for Chip Erase Am29LV017B Read Status Data (last two cycles WHWH1 Status D OUT t RB Read Status Data WHWH2 In Complete Progress t ...
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... Valid Status Valid Status (first read) (second read) Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure 19. DQ2 vs. DQ6 Am29LV017B VA High Z True Valid Data High Z True Valid Data 21415C- Valid Status Valid Data (stops toggling) 21415C-21 Erase ...
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... Note: For sector protect For sector unprotect Figure 21. Sector Protect/Unprotect Timing Diagram Min Min Program or Erase Command Sequence t RSP Valid* 60h Sector Protect: 100 µs Sector Unprotect Am29LV017B All Speed Options Unit 500 ns 4 µs t VIDR 21415C-23 Valid* Valid* Verify ...
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... See the “Erase and Programming Performance” section for more information -80R Min 80 Min Min 45 Min 35 Min Min Min Min Min Min 35 Min Typ Typ Am29LV017B -90 -120 Unit 90 120 ...
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... Data# Polling GHEL t t WHWH1 CPH t BUSY for program PD for program 55 for erase 30 for sector erase 10 for chip erase = Data Out, DQ7# = complement of data written to device. OUT Am29LV017B PA DQ7# D OUT 21415C-25 ...
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... V, 1,000,000 cycles. CC –100 mA = 3.0 V, one pin at a time. CC Test Setup OUT V IN Test Conditions 150 C 125 C Am29LV017B Unit Comments s Excludes 00h programming prior to erasure (Note 4) s µs Excludes system level overhead (Note 1,000,000 cycles. Additionally, CC Min Max –1.0 V 12.5 V – ...
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... TSR040—40-Pin Reverse TSOP (measured in millimeters) Pin 1 I. 1.20 MAX 0.25MM (0.0098") BSC * For reference only. BSC is an ANSI standard for Basic Space Centering 18.30 18.50 19.80 20.20 0˚ 5˚ 0.50 0. 18.30 18.50 19.80 20.20 0˚ 5˚ 0.50 0.70 Am29LV017B 0.95 1.05 9.90 10.10 0.50 BSC 0.05 0.15 0.08 16-038-TSOP-1_AC 0.20 TS 040 4-25-96 lv 0.10 0.21 0.95 1.05 9.90 10.10 0.50 BSC 0.05 0.15 16-038-TSOP-1_AC 0.08 TSR040 0.20 4-25-96 lv 0.10 0.21 ...
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... PHYSICAL DIMENSIONS FGC048—48-Ball Fine-Pitch Ball Grid Array (FBGA (measured in millimeters) DATUM B 0.025 CHAMFER INDEX 0.80 0.40 0.08 (48x) 0. 0.25 0.45 1.20 MAX 0. 8.80 9.20 DATUM A 5.60 BSC 0.40 DETAIL A 0.20 Z DETAIL A Am29LV017B 7.80 0. 8.20 0.40 4.00 BSC 0.10 Z 16-038-FGC-2 EG137 12-2- ...
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... Figure 21, Sector Protect/Unprotect Timing Diagram A valid address is not required for the first write cycle; only the data 60h. Erase and Programming Performance In Note 2, the worst case endurance is now 1 million cy- cles. Am29LV017B . These parameters are WHWH2 . VCS . This parameter is not VIDR ...