AS4C1M16F5-50TC Alliance Semiconductor, AS4C1M16F5-50TC Datasheet

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AS4C1M16F5-50TC

Manufacturer Part Number
AS4C1M16F5-50TC
Description
5V 1M x 16 CM0S DRAM (fast-page mode), 5V power supply, 50ns RAS access time
Manufacturer
Alliance Semiconductor
Datasheet
Features
• Organization: 1,048,576 words × 16 bits
• High speed
• Low power consumption
• Fast page mode
Pin arrangement
Selection guide
Maximum
Maximum column address access time
Maximum
Maximum output enable (
Minimum read or write cycle time
Minimum fast page mode cycle time
Maximum operating current
Maximum CMOS standby current
- 50/60 ns
- 20/25 ns fast page cycle time
- 13/17 ns
- Active:
- Standby: 11 mW max, CMOS DQ
4/11/01; v.0.9.1
DQ7
DQ4
DQ1
DQ2
DQ3
DQ5
DQ6
DQ8
RAS
Vcc
Vcc
WE
Vcc
NC
NC
NC
NC
A2
A0
A1
A3
RAS
CAS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
RAS
CAS
SOJ
access time
access time
880 mW max (AS4C1M16E0-60)
access time
access time
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
V
DQ16
DQ15
DQ14
DQ13
V
DQ12
DQ11
DQ10
DQ9
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
OE
SS
SS
SS
) access time
DQ1
DQ2
DQ4
DQ5
DQ6
DQ7
DQ8
DQ
V
V
RAS
V
NC
NC
NC
NC
NC
WE
A0
A1
A2
A3
CC
CC
CC
3
5V 1M×16 CMOS DRAM (fast-page mode)
1
2
3
4
5
6
7
8
9
10
11
15
16
17
18
19
20
21
22
23
24
25
TSOP II
Alliance Semiconductor
50
49
48
47
46
45
44
43
42
41
40
36
35
34
33
32
31
30
29
28
27
26
Symbol
t
t
t
t
t
t
I
I
RAC
AA
CAC
OEA
RC
PC
CC1
CC5
V
DQ16
DQ15
DQ14
DQ13
V
DQ12
DQ11
DQ10
DQ9
NC
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
SS
SS
• 1024 refresh cycles, 16 ms refresh interval
• Read-modify-write
• TTL-compatible, three-state DQ
• JEDEC standard package and pinout
• 5V power supply
• Industrial and commercial temperature available
Pin designation
Pin(s)
A0 to A9
RAS
DQ1 to DQ16
OE
WE
UCAS
LCAS
V
V
CC
SS
-
- 400 mil, 42-pin SOJ
- 400 mil, 44/50-pin TSOP II
RAS
®
AS4C1M16F5-50
-only or
170
2.0
50
25
13
13
84
20
CAS
-before-
Description
Address inputs
Row address strobe
Input/output
Output enable
Write enable
Column address strobe, upper byte
Column address strobe, lower byte
Power
Ground
AS4C1M16F5-60
RAS
Copyright © Alliance Semiconductor. All rights reserved.
refresh
104
160
2.0
60
30
17
15
25
P. 1 of 21
AS4C1M16F5
Unit
mA
mA
ns
ns
ns
ns
ns
ns

Related parts for AS4C1M16F5-50TC

AS4C1M16F5-50TC Summary of contents

Page 1

... CC5 Alliance Semiconductor AS4C1M16F5 -before- refresh CAS RAS Description Address inputs Row address strobe Input/output Output enable Write enable Column address strobe, upper byte Column address strobe, lower byte Power Ground AS4C1M16F5- 104 20 25 170 160 2.0 2 Copyright © ...

Page 2

... Normal read or write cycles refresh the row being accessed. The AS4C1M16F5 is available in the standard 42-pin plastic SOJ and the 44/50-pin TSOP II packages, respectively. It operates with a single power supply of 5V ± 0.5V. The device provides TTL compatible inputs and outputs. ...

Page 3

... RAS XCAS = UCAS LCAS min 0.2V UCAS LCAS cycling min UCAS LCAS RC Alliance Semiconductor AS4C1M16F5 Max Unit +7 0 +7.0 V +150 °C o 260 × × sec -50 -60 Min Max Min Max Unit Notes -5 ...

Page 4

... AS4C1M16F5 AC parameters common to all waveforms Symbol Parameter t Random read or write cycle time RC t precharge time RAS RP t pulse width RAS RAS t pulse width CAS CAS t to delay time RAS CAS RCD t to column address delay time RAS RAD t to hold time ...

Page 5

... Min Max 113 – 67 – 32 – 42 – -50 Min Max ) 5 – RAS 8 – 0 – 10 Alliance Semiconductor AS4C1M16F5 -60 Min Max Unit Notes 0 – – – – – – – -60 Min Max ...

Page 6

... AS4C1M16F5 Fast page mode cycle Symbol Parameter t Access time from precharge CAS CPA t pulse width RAS RASP t Read-write cycle time PC t precharge time (fast page) CAS CP t Fast page mode RMW cycle PCM t Page mode pulse width (RMW) CAS CRW Output enable ...

Page 7

... Access time is determined by the longest achieve t (min) and t (max) values. ASC CP PC CPA 15 These parameters are sampled and not 100% tested. 16 These characteristics apply to AS4C1M16F5 5V devices. AC test conditions - Access times are measured with output reference levels 2.4V and V = 0.4V 2.4V and V = 0.8V ...

Page 8

... AS4C1M16F5 Read waveform RAS t CRP UCAS, LCAS t t RAH ASR Address Row address Upper byte read waveform RAS t CRP UCAS t CRP LCAS t RAH t RAD t ASR Address Row WE OE Upper DQ Lower DQ 4/11/01; v.0.9.1 ® RAS t t RCD RSH t CSH t t CAH ASC ...

Page 9

... CLZ RAS t CSH t RSH t t RCD CAS t t RAD RAL t ASC t CAH Column address t CWL t RWL WCS WCH Data in Alliance Semiconductor AS4C1M16F5 CRP t RPC t RCH t RRH t WEZ t REZ t OEZ t OFF Data out ...

Page 10

... AS4C1M16F5 Upper byte early write waveform RAS t ASR t RAH Address Row address t CRP UCAS t CRP LCAS WE OE Upper DQ Lower DQ Lower byte early write waveform RAS t t ASR Address Row address t CRP UCAS t CRP LCAS WE OE Upper DQ Lower DQ 4/11/01; v.0.9.1 ® RAS t RAD ...

Page 11

... OED t DH Data RAS t RAD RAL Column address t CSH t t RCD RSH t CAH t ASC t CWL OEH t DS Data in t OED Alliance Semiconductor AS4C1M16F5 OE controlled OEH OE controlled CAS CRP t RPC RWL ...

Page 12

... AS4C1M16F5 Lower byte write waveform RAS t ASR t RAH Address Row address t CRP LCAS t CRP UCAS WE OE Upper DQ Lower DQ Read-modify-write waveform RAS t CRP UCAS, LCAS t RAD t ASR Address Row address 4/11/01; v.0.9.1 ® RAS t RAD t RAL Column address t CAH t t RCD CAS ...

Page 13

... RAL t t ACS CAH Column address t RWD t AWD t CWD t OEA t t OED OLZ t OED t RAC CAC t t CLZ OEZ Data out Alliance Semiconductor AS4C1M16F5 CRP t RPC t CWL t RWL RPC t CRP t CWL t RWL Data in P ...

Page 14

... AS4C1M16F5 Fast page mode read waveform RAS t t CRP RCD CAS t RAD t t ASR RAH Row Address RAC I/O Fast page mode byte write waveform RAS t t RCD CAS t RAD t t ASR RAH Row Column Address t RWD t RCS OEA OE t RAC I/O 4/11/01 ...

Page 15

... WCS t AR Column Column t HDR t DH Data In Data RAS t CHR CSR OPEN t RAS t CRP t RAH Row address Alliance Semiconductor AS4C1M16F5 t RWL CAH RSH t RAL Column t CWL WCH OEH t OED Data ...

Page 16

... AS4C1M16F5 Hidden refresh waveform (read) t RAS RAS t CRP t RCD CAS RAD t RAH t ASR Row Address t RCS RAC Hidden refresh waveform (write) RAS t t CRP RCD UCAS, t LCAS AR t RAD t RAH t t ASR ASC Row address Address t WCR t WCS ...

Page 17

... Data out t RCS t ROH t OEA t RWL t CWL WCH t WCS Data in t RCS t CWD t AWD t OEA CLZ OEZ t CAC Data out Alliance Semiconductor AS4C1M16F5 OFF t OEZ t RRH t RCH t RWL CWL t OED Data ...

Page 18

... AS4C1M16F5 Package dimensions D e SOJ Pin TSOP 4/11/01; v.0.9.1 ® Seating Plane ...

Page 19

... Ambient temperature (°C) Typical refresh current I CC3 vs. Ambient temperature Ta 160 140 -50 -60 120 100 0 Ambient temperature (°C) Alliance Semiconductor AS4C1M16F5 Typical access time t RAC vs. load capacitance C L 100 90 80 -70 70 - 100 150 200 250 ...

Page 20

... Supply voltage (V) Signals Test conditions RAS UCAS LCAS DQ0 to DQ15 AS4C1M16F5-50JC 5V AS4C1M16F5-50JI AS4C1M16F5-50TC 5V AS4C1M16F5-50TI Alliance Semiconductor Typical output source current I OH vs. output voltage 0.0 0.0 1.0 2.0 3.0 4.0 Output voltage (V) ƒ MHz Room temperature a Max Unit ...

Page 21

... AS4C1M16F5 part numbering system AS4 C 1M16E0 DRAM prefix CMOS Device number RAS access time 4/11/01; v.0.9.1 ® –XX X Package 42-pin SOJ 400 mil T=44/50-pin TSOP II 400 mil Alliance Semiconductor AS4C1M16F5 X Temperature range C=Commercial, 0°C to 70°C I=Industrial, -40°C to 85° ...

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