KM416V4104BS-5 Samsung, KM416V4104BS-5 Datasheet
KM416V4104BS-5
Related parts for KM416V4104BS-5
KM416V4104BS-5 Summary of contents
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... SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. DESCRIPTION • Extended Data Out Mode operation • 2 CAS Byte/Word Read/Write operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • Fast parallel test mode capability • ...
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KM416V4004B, KM416V4104B PIN CONFIGURATION (Top Views) •KM416V40(1)04BS ¡Û DQ0 3 48 DQ1 4 47 DQ2 5 46 DQ3 DQ4 8 43 DQ5 9 42 DQ6 10 41 DQ7 ...
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KM416V4004B, KM416V4104B ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" ...
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KM416V4004B, KM416V4104B DC AND OPERATING CHARACTERISTICS Symbol Power I Don t care CC1 Normal I Don t care CC2 L I Don t care CC3 I Don t care CC4 Normal I Don t care CC5 L I Don t ...
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KM416V4004B, KM416V4104B CAPACITANCE (T = Parameter Input capacitance [A0 ~ A12] Input capacitance [RAS, UCAS, LCAS, W, OE] Output capacitance [DQ0 - DQ15] AC CHARACTERISTICS ( Test condition : V =3.3V 0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V CC ...
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KM416V4004B, KM416V4104B AC CHARACTERISTICS (Continued) Parameter Data hold time Refresh period (Normal) Refresh period (L-ver) Write command set-up time CAS to W delay time RAS to W delay time Column address to W delay time CAS set-up time (CAS -before-RAS ...
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KM416V4004B, KM416V4104B TEST MODE CYCLE Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address RAS pulse width CAS pulse width RAS hold time CAS hold time ...
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KM416V4004B, KM416V4104B NOTES An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles 1. before proper device operation is achieved. V (min) and V (max) are reference levels for measuring timing ...
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KM416V4004B, KM416V4104B t is specified from W falling edge to the earlier CAS rising edge. 16. CWL t 17. is referenced to the earlier CAS falling edge before RAS transition low. CSR 18 referenced to the later CAS ...
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KM416V4004B, KM416V4104B WORD READ CYCLE RAS UCAS LCAS ASR ADDRESS ...
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KM416V4004B, KM416V4104B LOWER BYTE READ CYCLE NOTE : D = OPEN RAS UCAS LCAS ASR ...
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KM416V4004B, KM416V4104B UPPER BYTE READ CYCLE NOTE : D = OPEN RAS CRP UCAS CRP LCAS ASR V ...
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KM416V4004B, KM416V4104B WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR ...
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KM416V4004B, KM416V4104B LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS V - ...
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KM416V4004B, KM416V4104B UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS V - ...
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KM416V4004B, KM416V4104B WORD WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS V - ...
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KM416V4004B, KM416V4104B LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ...
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KM416V4004B, KM416V4104B UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS V ...
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KM416V4004B, KM416V4104B WORD READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW ...
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KM416V4004B, KM416V4104B LOWER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW ...
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KM416V4004B, KM416V4104B UPPER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW ...
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KM416V4004B, KM416V4104B HYPER PAGE MODE WORD READ CYCLE RAS CRP UCAS CRP LCAS ASR RAH ...
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KM416V4004B, KM416V4104B HYPER PAGE MODE LOWER BYTE READ CYCLE RAS CRP UCAS LCAS ASR RAH ROW ...
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KM416V4004B, KM416V4104B HYPER PAGE MODE UPPER BYTE READ CYCLE RAS CRP UCAS CRP LCAS ASR ...
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KM416V4004B, KM416V4104B HYPER PAGE MODE WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ...
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KM416V4004B, KM416V4104B HYPER PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP ...
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KM416V4004B, KM416V4104B HYPER PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP ...
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KM416V4004B, KM416V4104B HYPER PAGE MODE WORD READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS RAD t ...
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KM416V4004B, KM416V4104B HYPER PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS RAD ...
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KM416V4004B, KM416V4104B HYPER PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS RAD ...
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KM416V4004B, KM416V4104B HYPER PAGE READ AND WRITE MIXED CYCLE RAS UCAS LCAS t RAD RAH t ASR ...
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KM416V4004B, KM416V4104B RAS - ONLY REFRESH CYCLE NOTE : Don t care OPEN OUT RAS CRP UCAS CRP ...
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KM416V4004B, KM416V4104B HIDDEN REFRESH CYCLE ( READ ) RAS CRP UCAS CRP LCAS ASR ADDRESS ...
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KM416V4004B, KM416V4104B HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ...
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KM416V4004B, KM416V4104B CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : Don t care RAS UCAS LCAS V - ...
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KM416V4004B, KM416V4104B PACKAGE DIMENSION 50 TSOP(II) 400mil 0.034 (0.875) 0.841 (21.35) MAX 0.821 (20.85) 0.829 (21.05) 0.0315 (0.80) 0.002 (0.05) MIN 0.010 (0.25) 0.018 (0.45) CMOS DRAM Units : Inches (millimeters) 0.004 (0.10) 0.010 (0.25) 0.047 (1.20) 0.010 (0.25) MAX ...