SA7026DH Philips Semiconductors, SA7026DH Datasheet
SA7026DH
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SA7026DH Summary of contents
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SA7026 1.3GHz low voltage fractional-N dual frequency synthesizer Product specification Supersedes data of 1999 Apr 16 INTEGRATED CIRCUITS 1999 Nov 04 ...
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... Crystal reference input frequency REF f Maximum phase comparator frequency PC T Operating ambient temperature amb ORDERING INFORMATION PACKAGE TYPE NUMBER TYPE NUMBER NAME SA7026DH TSSOP20 1999 Nov 04 LOCK RFin+ RFin– GND . DD GND APPLICATIONS 350 to 1300 MHz wireless equipment Cellular phones (all standards) WLAN Portable battery-powered radio equipment ...
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... Philips Semiconductors 1.3GHz low voltage fractional-N dual synthesizer 17 CLOCK 2–BIT SHIFT 18 REGISTER DATA 19 STROBE ADDRESS DECODER LOAD SIGNALS 5 RFin+ 6 RFin– AMP 16 REFin+ REFin– AUXin AMP 2 TEST PINNING SYMBOL PIN DESCRIPTION LOCK 1 Lock detect output TEST 2 Test (should be either grounded or ...
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... Philips Semiconductors 1.3GHz low voltage fractional-N dual synthesizer Limiting values SYMBOL V Digital supply voltage DD V Analog supply voltage DDCP V –V Difference in voltage between V DDCP DD V Voltage at pins 12 Voltage at pin Difference in voltage between GND GND ...
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... Philips Semiconductors 1.3GHz low voltage fractional-N dual synthesizer CHARACTERISTICS +3.0V +25 C; unless otherwise specified. DDCP DD amb SYMBOL PARAMETER Supply; pins Digital supply voltage DD V Analog supply voltage DDCP I Synthesizer operational total supply current DDTotal I Total supply current in power-down mode Standby RFin main divider input ...
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... Philips Semiconductors 1.3GHz low voltage fractional-N dual synthesizer CHARACTERISTICS (continued) SYMBOL PARAMETER Phase noise (condition 00) SET Synthesizer’s contribution to close-in phase noise of 900 MHz RF signal at 1 kHz offset. (f) Synthesizer’s contribution to close-in phase noise of 800 MHz RF signal at 1 kHz offset. ...
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... Philips Semiconductors 1.3GHz low voltage fractional-N dual synthesizer FUNCTIONAL DESCRIPTION Main Fractional-N divider The RFin inputs drive a pre-amplifier to provide the clock to the first divider stage. For single ended operation, the signal should be fed to one of the inputs while the other one is AC grounded. The pre-amplifier has a high input impedance, dominated by pin and pad capacitance. The circuit operates with signal levels from – ...
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... Philips Semiconductors 1.3GHz low voltage fractional-N dual synthesizer REF DIVIDER f REF AUX/MAIN DIVIDER f REF 1999 Nov 04 “1” CLK R R “1” CLK Q X Figure 5. Phase Detector Structure with Timing 8 Product specification SA7026 V CC P–TYPE P CHARGE PUMP ...
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... Philips Semiconductors 1.3GHz low voltage fractional-N dual synthesizer Main Output Charge Pumps and Fractional Compensation Currents (see Figure 6) The main charge pumps on pins PHP and PHI are driven by the main phase detector and the charge pump current values are determined by the current at pin R ...
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... Philips Semiconductors 1.3GHz low voltage fractional-N dual synthesizer Auxiliary Output Charge Pumps The auxiliary charge pump on pin PHA are driven by the auxiliary phase detector and PHP, PHI are driven by the main phase detector. The current value is determined by the external resistor attached to pin R ...
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... Philips Semiconductors 1.3GHz low voltage fractional-N dual synthesizer Serial programming bus The serial input is a 3-wire input (CLOCK, STROBE, DATA) to program all counter divide ratios, fractional compensation DAC, selection and enable bits. The programming data is structured into 24 bit words; each word includes address bits. Figure 8 shows the timing diagram of the serial input ...
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... Philips Semiconductors 1.3GHz low voltage fractional-N dual synthesizer Data format Table 1. Format of programmed data Last In MSB p23 p22 p21 Table 2. A word, length 24 bits Last In MSB Address fmod Fractional-N Main Divider ratio NF2 NF1 NF0 N15 Default A word select Fixed to 00 ...
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... Philips Semiconductors 1.3GHz low voltage fractional-N dual synthesizer TYPICAL PERFORMANCE CHARACTERISTICS 3000 2000 1000 51.67 A SET –1000 I = 103.33 A SET I = 165.33 A SET –2000 I = 206.67 A SET –3000 0 0.25 0.5 0.75 1 1.25 1.5 1.75 COMPLIANCE VOLTAGE (V) Figure 9. PHI Charge Pump vs. I (CP = 01; Temp = 25 C) 8000 I SET I 6000 SET I 4000 ...
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... Philips Semiconductors 1.3GHz low voltage fractional-N dual synthesizer TYPICAL PERFORMANCE CHARACTERISTICS 250 200 150 100 50 0 – 51.67 A SET –100 I = 103.33 A SET –150 I = 165.33 A SET –200 I = 206.67 A SET –250 0 0.25 0.5 0.75 1 1.25 1.5 1.75 COMPLIANCE VOLTAGE (V) Figure 15. PHP Charge Pump Output vs. I (CP = 11; Temp = 25 C) ...
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... Philips Semiconductors 1.3GHz low voltage fractional-N dual synthesizer TYPICAL PERFORMANCE CHARACTERISTICS 150 100 51.67 A SET I = 103.33 A SET – 165.33 A SET –100 I = 206.67 A SET –150 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 COMPLIANCE VOLTAGE (V) Figure 21. PHA Charge Pump Output vs. I (CP = 11; Temp = 25 C) 400 300 200 100 0 – ...
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... Philips Semiconductors 1.3GHz low voltage fractional-N dual synthesizer TYPICAL PERFORMANCE CHARACTERISTICS 5. – 3. 3.00 V – 2. –15 –20 –25 –30 – 120 160 200 240 280 320 360 400 440 480 520 560 FREQUENCY (MHz) Figure 27. Auxiliary Divider Input Sensitivity vs. ...
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... Philips Semiconductors 1.3GHz low voltage dual fractional–N frequency synthesizer TSSOP20: plastic thin shrink small outline package; 20 leads; body width 4.4 mm 1999 Nov 04 17 Product specification SA7026 SOT360-1 ...
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... Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no ...