MRF9045 Motorola, MRF9045 Datasheet

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MRF9045

Manufacturer Part Number
MRF9045
Description
MRF9045RF POWER FIELD EFFECT TRANSISTORS
Manufacturer
Motorola
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
28 volt base station equipment.
• Typical Performance at 945 MHz, 28 Volts
• Integrated ESD Protection
• Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz,
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Dual–Lead Boltdown Plastic Package Can Also Be Used As Surface
• TO–272 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
• TO–270 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
MOISTURE SENSITIVITY LEVEL
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
REV 6
Motorola, Inc. 2003
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Per JESD 22–A113
Designed for broadband commercial and industrial applications with frequen-
45 Watts CW Output Power
Mount.
13 inch Reel.
13 inch Reel.
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 45 Watts PEP
Power Gain — 19 dB
Efficiency — 41% (Two Tones)
IMD — –31 dBc
C
= 25°C
Test Methodology
Test Conditions
Characteristic
Freescale Semiconductor, Inc.
For More Information On This Product,
Rating
Go to: www.freescale.com
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
GS
stg
D
J
CASE 1337–03, STYLE 1
CASE 1265–08, STYLE 1
MRF9045MBR1
TO–272 DUAL LEAD
MRF9045MR1
MRF9045MBR1
MRF9045MR1
LATERAL N–CHANNEL
PLASTIC
RF POWER MOSFETs
MRF9045MR1 MRF9045MBR1
PLASTIC
945 MHz, 45 W, 28 V
TO–270
M2 (Minimum)
1 (Minimum)
–65 to +150
BROADBAND
+15, –0.5
Rating
Class
Value
1.18
Max
0.85
177
175
65
3
Order this document
by MRF9045MR1/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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MRF9045 Summary of contents

Page 1

... CASE 1337–03, STYLE 1 Symbol V DSS stg T J Symbol R θJC Go to: www.freescale.com Order this document by MRF9045MR1/D MRF9045MR1 MRF9045MBR1 945 MHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 1265–08, STYLE 1 TO–270 PLASTIC MRF9045MR1 TO–272 DUAL LEAD PLASTIC MRF9045MBR1 Value Unit 65 Vdc +15, – ...

Page 2

... MHz 930.1 MHz and f1 = 960.0 MHz 960.1 MHz) Input Return Loss ( Vdc PEP 350 mA, DD out 930.0 MHz 930.1 MHz and f1 = 960.0 MHz 960.1 MHz) MRF9045MR1 MRF9045MBR1 For More Information On This Product 25°C unless otherwise noted) Symbol Min I — DSS I — DSS I — ...

Page 3

... V Electrolytic Capacitor L1, L2 12.5 nH Inductors Z1 0.20″ x 0.08″ Microstrip Z2 0.57″ x 0.12″ Microstrip Figure 1. MRF9045MR1 930–960 MHz Broadband Test Circuit Schematic Figure 2. MRF9045MR1 930–960 MHz Broadband Test Circuit Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product ...

Page 4

... L1, L2 12.5 nH Surface Mount Inductors WB1, WB2 10 mil Brass Wear Blocks Figure 3. MRF9045MBR1 930–960 MHz Broadband Test Circuit Schematic Figure 4. MRF9045MBR1 930–960 MHz Broadband Test Circuit Component Layout MRF9045MR1 MRF9045MBR1 For More Information On This Product 0.260″ x 0.060″ Microstrip Z2 0.240″ ...

Page 5

... Figure 8. Intermodulation Distortion Products versus Output Power MOTOROLA RF DEVICE DATA For More Information On This Product, TYPICAL CHARACTERISTICS Figure 5. Class AB Broadband Circuit Performance Figure 7. Intermodulation Distortion versus η Figure 9. Power Gain and Efficiency versus Go to: www.freescale.com η Output Power Output Power MRF9045MR1 MRF9045MBR1 5 ...

Page 6

... Freescale Semiconductor, Inc. Figure 10. Output Voltage versus Supply Voltage (MRF9045MR1) MRF9045MR1 MRF9045MBR1 For More Information On This Product, 6 TYPICAL CHARACTERISTICS η Figure 11. Power Gain, Efficiency and IMD versus Output Power (MRF9045MBR1) Go to: www.freescale.com MOTOROLA RF DEVICE DATA ...

Page 7

... Freescale Semiconductor, Inc. Z source Z load Figure 12. Series Equivalent Input and Output Impedance (MRF9045MR1) MOTOROLA RF DEVICE DATA For More Information On This Product, Ω source load MHz Ω Ω 930 0.81 – j0.25 2.03 + j0.09 945 0.85 – j0.05 2.03 + j0.28 = Test circuit impedance as measured from gate to ground. = Test circuit impedance as measured from drain to ground ...

Page 8

... Freescale Semiconductor, Inc. Z source Z load Figure 13. Series Equivalent Input and Output Impedance (MRF9045MBR1) MRF9045MR1 MRF9045MBR1 For More Information On This Product, 8 Ω source load MHz Ω Ω 930 0.75 – j0.6 2.65 – j0.05 945 0.72 – j0.6 2.60 – j0.05 960 0.70 – j0.5 2.55 – j0.02 = Test circuit impedance as measured from gate to ground ...

Page 9

... Freescale Semiconductor, Inc. MOTOROLA RF DEVICE DATA For More Information On This Product, NOTES Go to: www.freescale.com MRF9045MR1 MRF9045MBR1 9 ...

Page 10

... Freescale Semiconductor, Inc PIN 2 D2 PIN 3 c1 DATUM H PLANE A1 A2 NOTE 7 MRF9045MR1 MRF9045MBR1 For More Information On This Product, 10 PACKAGE DIMENSIONS PIN ONE Ç Ç Ç Ç EXPOSED Ç Ç Ç Ç HEATSINK AREA PIN 1 Ç ...

Page 11

... NOTE 8 É É É É É É É É E2 VIEW Y–Y INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa MRF9045MR1 MRF9045MBR1 11 ...

Page 12

... HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1–800–521–6274 or 480–768–2130 MRF9045MR1 MRF9045MBR1 For More Information On This Product, ◊ 12 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu, Minato–ku, Tokyo 106–8573, Japan 81– ...

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