... 0. determined by the user's board design. CA Min Typ Max Units mV 100 0.4 0.9 1.5 V -3.2 mV 15.5 18 19.6 28 =125 1290 pF 315 pF 170 2 6.7 nC 0.83 A 0.7 1.2 V (Note 2) FDW2501N Rev E(W) ...
... Source Current and Temperature 2.0V GS 2.5V 3.0V 3.5V 4.0V 4. DRAIN CURRENT ( 3. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDW2501N Rev E( 1.2 ...
... C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 208°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( =208 °C/W JA P(pk ( Duty Cycle 100 1000 FDW2501N Rev E(W) 20 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...