CXK581000ATM-70LL Sony, CXK581000ATM-70LL Datasheet
CXK581000ATM-70LL
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CXK581000ATM-70LL Summary of contents
Page 1
... CXK581000ATM/AYM/AM/AP 131072-word 8-bit High Speed CMOS Static RAM Description The CXK581000ATM/AYM/AM/ high speed CMOS static RAM organized as 131072-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand- by current and higher data retention stability. Special feature are low power consumption, high speed and broad package line-up ...
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... Read Data out Write Data in ( +70°C, GND = 0V) Min. Typ. 4.5 5.0 2.2 — V –0.3 — – 2 – CXK581000ATM/AYM/AM/AP Pin Description Symbol Description A0 to A16 Address input I/O1 to I/O8 Data input output CE1, CE2 Chip enable 1, 2 input WE Write enable input OE Output enable input Vcc ...
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... V – 0. CE1 ≥ V – 0. CE2 ≥ V – 0. CE2 = –1.0mA = 2.1mA – 3 – CXK581000ATM/AYM/AM/ ±10%, GND = 0V +70° Min. Typ. –1 — –1 — — 7 — 45 — 40 — 35 — +70°C — ...
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... L (Ta = 25° 1MHz) Test conditions Min. Typ — — — — I/O = 5V±10 +70°C) CC Conditions 5ns 5ns 1. 30pF, 1TTL 100pF, 1TTL L – 4 – CXK581000ATM/AYM/AM/AP Max. Unit • Test circuit TTL C L ...
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... — — — 0 WR1 t 10 — — — 25 WHZ – 5 – CXK581000ATM/AYM/AM/AP -10LL/10SL Unit Max. Min. Max. — 100 — 70 — 100 70 — 100 70 — 100 40 — — 15 — — 10 — — ...
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... Previous data valid CO1 t LZ1 t CO2 t LZ2 OLZ High impedance WHZ ( 2) – 6 – CXK581000ATM/AYM/AM/AP Data valid t HZ1 t HZ2 t OHZ Data valid Data valid t OW High impedance ( 2) ...
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... CE1 or the falling edge of CE2, whichever comes earlier, until WR1 the end of the write cycle Data valid High impedance Data valid High impedance – 7 – CXK581000ATM/AYM/AM/ WR1 WR1 t DH ...
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... 3. 2. Chip disable to data retention mode – 0.2V [CE1 Control] or CE2 ≤ 0.2V [CE2 Control] CC – 8 – CXK581000ATM/AYM/AM/ ( +70°C) Min. Typ. Max. Unit 2.0 — 5.5 — — +70°C — — 2 +40°C — ...
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... CO2 0.8 0.6 4.5 4. — Supply voltage ( 25°C 5.25 5.5 70ns 55ns Read 25° 1/t ) (MHz 25°C 5.25 5.5 – 9 – CXK581000ATM/AYM/AM/AP Supply current vs. Ambient temperature 1.2 1.1 I CC2 1.0 0 5. — Ambient temperature (°C) Access time vs. Load capacitance 2.0 1.8 1.6 1 1 25°C ...
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... Standby current vs. Ambient temperature 0.5 0.2 0 6.0 Standby current vs. Ambient temperature 1.4 1.2 1.0 0.8 0.6 0 5.5 Output low current vs. Output low voltage 1.8 1.4 1.0 = 5.0V 0 – 10 – CXK581000ATM/AYM/AM/ 5. — Ambient temperature (° 5. — Ambient temperature (° 5. 25°C 0.2 0.4 0.6 0.8 V — Output low voltage (V) OL ...
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... 0.08 0.08 M 0.5 0.1 ± 0.1 0° to 10° DETAIL A PACKAGE STRUCTURE PACKAGE MATERIAL LEAD TREATMENT TSOP-32P-L01R TSOP032-P-0820-B LEAD MATERIAL PACKAGE WEIGHT – 11 – CXK581000ATM/AYM/AM/AP 0.1 0.1 ± 0.1 0° to 10° DETAIL A EPOXY / PHENOL RESIN SOLDER PLATING 42 ALLOY + 0.2 1.07 – 0.1 0.1 EPOXY RESIN SOLDER PLATING 42 ALLOY 0.3g ...
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... EPOXY / PHENOL RESIN LEAD TREATMENT SOLDER PLATING LEAD MATERIAL 42 ALLOY PACKAGE WEIGHT 32PIN DIP (PLASTIC) 600mil + 0 2.54 0.5 ± 0.1 1.2 ± 0.15 PACKAGE STRUCTURE PACKAGE MATERIAL EPOXY / PHENOL RESIN LEAD TREATMENT SOLDER PLATING LEAD MATERIAL 42 ALLOY PACKAGE WEIGHT 4.5g – 12 – CXK581000ATM/AYM/AM/AP + 0.15 0.1 0° to 15° ...