K7R323684M-FC25 Samsung, K7R323684M-FC25 Datasheet

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K7R323684M-FC25

Manufacturer Part Number
K7R323684M-FC25
Description
K7R323684M-FC251Mx36 & 2Mx18 QDRTM II b4 SRAM
Manufacturer
Samsung
Datasheet

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K7R323684M-FC25
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K7R321884M
Document Title
K7R323684M
Revision History
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
1Mx36-bit, 2Mx18-bit QDR
Rev. No.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
2.0
History
1. Initial document.
1. Package dimension modify.
1. Pin name change from DLL to Doff.
2. Vddq range change from 1.5V to 1.5V~1.8V.
3. Update JTAG test conditions.
4. Reserved pin for high density name change from NC to Vss/SA
5. Delete AC test condition about Clock Input timing Reference Level
6. Delete clock description on page 2 and add HSTL I/O comment
1. Update current characteristics in DC electrical characteristics
2. Change AC timing characteristics
3. Update JTAG instruction coding and diagrams
1. Add -FC25 part(AC Characteristics)
2. Add AC electrical characteristics.
3. Change AC timing characteristics
4. Change DC electrical characteristics(I
1. Change the data Setup/Hold time.
2. Change the Access Time.(tCHQV, tCHQX, etc.)
3. Change the Clock Cycle Time.(MAX value of tKHKH)
4. Change the JTAG instruction coding.
1. Change the Boundary scan exit order.
2. Change the AC timing characteristics(-25, -20)
3. Correct the Overshoot and Undershoot timing diagrams.
1. Change the JTAG Block diagram
1. Correct the JTAG ID register definition
2. Correct the AC timing parameter (delete the tKHKH Max value)
3. Change the Isb1 current
1. Change the Maximum Clock cycle time.
2. Correct the 165FBGA package ball size.
1. Final spec release
1. Delete the x8 Org. part
P.20 from 13mmx15mm to 15mmx17mm
TM
II b4 SRAM
SB1
)
- 1 -
1Mx36 & 2Mx18 QDR
June 30, 2001
Oct. 20, 2001
Dec. 5, 2001
July, 29. 2002
Sep. 6. 2002
Oct. 7. 2002
Dec. 16, 2002
Dec. 26, 2002
Mar. 20, 2003
April. 4, 2003
Aug. 28, 2003
Dec. 1, 2003
Draft Date
TM
II b4 SRAM
Advance
Advance
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
Remark
Dec. 2003
Rev 2.0

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K7R323684M-FC25 Summary of contents

Page 1

... K7R323684M K7R321884M Document Title 1Mx36-bit, 2Mx18-bit QDR Revision History Rev. No. History 0.0 1. Initial document. 0.1 1. Package dimension modify. P.20 from 13mmx15mm to 15mmx17mm 0.2 1. Pin name change from DLL to Doff. 2. Vddq range change from 1.5V to 1.5V~1.8V. 3. Update JTAG test conditions. 4. Reserved pin for high density name change from NC to Vss/SA 5 ...

Page 2

... QDR SRAM and Quad Data Rate comprise a new family of products developed by Cypress, Hitachi, IDT, Micron, NEC and Samsung techno logy. 1Mx36 & 2Mx18 QDR II b4 SRAM TM Organization X36 X18 72(or 36) 72(or 36) WRITE DRIVER 18 1Mx36 (2Mx18) MEMORY ARRAY SELECT OUTPUT CONTROL - SRAM Part Cycle Access Number Time Time K7R323684M-FC25 4.0 0.45 K7R323684M-FC20 5.0 0.45 K7R323684M-FC16 6.0 0.50 K7R321884M-FC25 4.0 0.45 K7R321884M-FC20 5.0 0.45 K7R321884M-FC16 6.0 0.50 72 144 (or 36) 36 (or 18) (or 72) Q(Data Out) 72 ...

Page 3

... 5F,7F,5G,7G,5H,7H,5J,7J,5K, 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L DDQ 2A,10A,4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L,4M TMS TDI TCK TDO NC Notes cannot be set to V REF 2. When ZQ pin is directly connected Not connected to chip pad internally. 1Mx36 & 2Mx18 QDR K7R323684M(1Mx36 ...

Page 4

... K7R323684M K7R321884M PIN CONFIGURATIONS (TOP VIEW) K7R321884M(2Mx18 /SA D10 D NC D11 Q10 Q11 F NC Q12 D12 G NC D13 Q13 H Doff V V REF DDQ D14 Q14 L NC Q15 D15 D16 N NC ...

Page 5

... The K7R323684M and K7R321884M are37,748,736-bits QDR(Quad Data Rate) Synchronous Pipelined Burst SRAMs. They are organized as 1,048,576 words by 36bits for K7R323684M and 2,097,152 words by 18 bits for K7R321884M. The QDR operation is possible by supporting DDR read and write operations through separate data output and input ports with the same cycle ...

Page 6

... And "late writed" data is presented to the device on every rising edge of both K and K clocks. The device disregards input data presented on the same cycle W disabled. When the W is disabled after a read operation, the K7R323684M and K7R321884M will first complete burst read operation before entering into deselect mode at the next K clock rising edge. ...

Page 7

... K7R323684M K7R321884M READ NOP READ LOAD NEW D count=2 READ ADDRESS D count=0 ALWAYS DDR READ D count=D count+1 READ D count=1 INCREMENT READ ADDRESS Notes : 1. Internal burst counter is fixed as 2-bit linear, i.e. when first address is A0+0, next internal burst address is A0+1. 2. "READ" refers to read active status with R=Low, "READ" refers to read inactive status with R=high. "WRITE" and "WRITE" are the same case. ...

Page 8

... K7R323684M K7R321884M TRUTH TABLES SYNCHRONOUS TRUTH TABLE D(A1) Previous Stopped X X state Din K(t+1) Notes means "Don t Care". 2. The rising edge of clock is symbolized Before enter into clock stop status, all pending read and write operations will be completed. ...

Page 9

... K7R323684M K7R321884M ABSOLUTE MAXIMUM RATINGS* PARAMETER Voltage on V Supply Relative Voltage on V Supply Relative to V DDQ Voltage on Input Pin Relative Storage Temperature Operating Temperature Storage Temperature Range Under Bias *Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operati ng sections of this specification is not implied ...

Page 10

... K7R323684M K7R321884M AC ELECTRICAL CHARACTERISTICS PARAMETER Input High Voltage Input Low Voltage Notes: 1. This condition is for AC function test only, not for AC parameter test maintain a valid level, the transitioning edge of the input must : a) Sustain a constant slew rate from the current AC level through the target AC level, V ...

Page 11

... K7R323684M K7R321884M AC TIMING CHARACTERISTICS PARAMETER Clock Clock Cycle Time ( Clock Phase Jitter ( Clock High Time ( Clock Low Time ( Clock to Clock ( Clock to data clock ( DLL Lock Time ( Static to DLL reset ...

Page 12

... K7R323684M K7R321884M PIN CAPACITANCE PRMETER Address Control Input Capacitance Input and Output Capacitance Clock Capacitance Note: 1. Parameters are tested with RQ=250 2. Periodically sampled and not 100% tested. THERMAL RESISTANCE PRMETER Junction to Ambient Junction to Case Junction to Pins Note: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site thermal impedance ...

Page 13

... K7R323684M K7R321884M TIMING WAVE FORMS OF READ AND NOP READ t KHKH t KLKH KHKL IVKH KHIX R Q (Data Out) t KHKH t KLKH KHKL Note : 1. Q1-1 refers to output from address A1+0, Q1-2 refers to output from address A1+1 i.e. the next internal burst address following A1+0. ...

Page 14

... K7R323684M K7R321884M TIMING WAVE FORMS OF READ, WRITE AND NOP READ D(Data In) D(Data Out Note address A3=A2, data Q3-1=D2-1, data Q3-2=D2-2 , data Q3-3=D2-3, data Q3-4=D2-4 Write data is forwarded immediately as read results. 2.BWx ( NWx ) assumed active. 1Mx36 & 2Mx18 QDR WRITE READ A2 A3 ...

Page 15

... K7R323684M K7R321884M IEEE 1149.1 TEST ACCESS PORT AND BOUNDARY SCAN-JTAG This part contains an IEEE standard 1149.1 Compatible Test Access Port(TAP). The package pads are monitored by the Serial Scan circuitry when in test mode. This is to support connectivity testing during manufacturing and system diagnostics. Internal data is not driven out of the SRAM under JTAG control ...

Page 16

... K7R323684M K7R321884M SCAN REGISTER DEFINITION Part Instruction Register 1Mx36 3 bits 2Mx18 3 bits ID REGISTER DEFINITION Revision Number Part (31:29) 1Mx36 000 2Mx18 000 Note : Part Configuration /def=010 for 36Mb, /wx=11 for x36, 10 for x18 /t=1 for DLL Ver., 0 for non-DLL Ver. /q=1 for QDR, 0 for DDR /b=1 for 4Bit Burst, 0 for 2Bit Burst /s=1 for Separate I/O, 0 for Common I/O ...

Page 17

... K7R323684M K7R321884M JTAG DC OPERATING CONDITIONS Parameter Power Supply Voltage Input High Level Input Low Level Output High Voltage(I =-2mA) OH Output Low Voltage(I =2mA) OL Note: 1. The input level of SRAM pin is to follow the SRAM DC specification JTAG AC TEST CONDITIONS Parameter Input High/Low Level ...

Page 18

... K7R323684M K7R321884M 165 FBGA PACKAGE DIMENSIONS 15mm x 17mm Body, 1.0mm Bump Pitch, 11x15 Ball Array Symbol Value Units 0.1 C 1.3 0.1 D 0.35 0.05 1Mx36 & 2Mx18 QDR Note Symbol SRAM B Top View Side View ...

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