HY628400ALLT2-55

Manufacturer Part NumberHY628400ALLT2-55
DescriptionHY628400ALLT2-55512K x8 bit 5.0V Low Power CMOS slow SRAM
ManufacturerHynix Semiconductor
HY628400ALLT2-55 datasheet
 


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DC ELECTRICAL CHARACTERISTICS

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RECOMMENDED DC OPERATING CONDITION
= 0¡ É to 70¡ É ( Normal)/-25 C to 85 C (Extended) /-40 C to 85 C (Industrial), unless otherwise specified.
T
A
Symbol
Parameter
Vcc
Supply Voltage
Vss
Ground
V
Input High Voltage
IH
V
Input Low Voltage
IL
Note :
1. V
= -1.5V for pulse width less than 30ns and not 100% tested.
IL

DC ELECTRICAL CHARACTERISTICS

= 0¡ É to 70¡ É ( Normal)/-25 C to 85 C (Extended) /-40 C to 85 C (Industrial), unless otherwise specified.
T
A
Symbol
Parameter
I
Input Leakage Current
LI
I
Output Leakage Current
LO
Icc
Operating Power Supply
Current
I
Average Operating Current
CC1
I
TTL Standby Current
SB
(TTL Input)
I
Standby Current
SB1
(CMOS Input)
V
Output Low Voltage
OL
V
Output High Voltage
OH
Note : Typical values are at Vcc = 5.0V, T
CAPACITANCE
Temp = 25 C, f= 1.0MHz
Symbol
Parameter
C
Input Capacitance
IN
C
Output Capacitance
OUT
Note : This parameter is sampled and not 100% tested
Rev 07 / Apr. 2001
Min.
Typ.
Max.
4.5
5.0
5.5
0
0
0
2.2
-
Vcc+0.5
-0.5
-
0.8
(1)
Test Condition
Vss < V
< Vcc
IN
Vss < V
< Vcc, /CS = V
OUT
OE
V
or /WE = V
/
=
IH
IL
/CS = V
,
IL
V
= V
or V
I
0mA
IN
IH
IL,
I/O =
/CS = V
IL
Min Duty Cycle = 100%,
V
= V
or V
I
0mA
IN
IH
IL,
I/O =
/CS = V
IH
V
= V
or V
IN
IH
IL
/CS > Vcc - 0.2V,
L
V
> Vcc - 0.2V or
LL
IN
V
< Vss + 0.2V
L-E/I
IN
LL-E/I
I
= 2.1mA
OL
I
-1mA
OH =
= 25 C
A
Condition
Max.
V
= 0V
6
IN
V
= 0V
8
I/O
HY628400A Series
Unit
V
V
V
V
Min.
Typ.
Max.
-1
-
1
or
-1
-
1
IH
-
10
-
60
-
2
-
-
100
-
-
30
-
-
100
-
-
50
-
-
0.4
2.4
-
-
Unit
pF
pF
Unit
UA
UA
MA
MA
MA
uA
uA
uA
uA
V
V
3