K4E641611D-TC50 Samsung, K4E641611D-TC50 Datasheet
K4E641611D-TC50
Specifications of K4E641611D-TC50
Related parts for K4E641611D-TC50
K4E641611D-TC50 Summary of contents
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... All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES • Part Identification - K4E661611D-TC(5.0V, 8K Ref.) - K4E641611D-TC(5.0V, 4K Ref.) • Active Power Dissipation Speed 8K -50 ...
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... K4E661611D, K4E641611D PIN CONFIGURATION (Top Views) • K4E661611D-T • K4E641611D DQ0 3 48 DQ1 4 47 DQ2 5 46 DQ3 DQ4 8 43 DQ5 9 42 DQ6 10 41 DQ7 RAS ...
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... K4E661611D, K4E641611D ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability ...
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... K4E661611D, K4E641611D DC AND OPERATING CHARACTERISTICS Symbol Power I Don t care CC1 I Normal Don t care CC2 I Don t care CC3 I Don t care CC4 I Normal Don t care CC5 I Don t care CC6 Operating Current (RAS and UCAS, LCAS, Address cycling @ CC1 I : Standby Current (RAS=UCAS=LCAS=W=V CC2 RAS-only Refresh Current (UCAS=LCAS=V ...
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... K4E661611D, K4E641611D CAPACITANCE (T = Parameter Input capacitance [A0 ~ A12] Input capacitance [RAS, UCAS, LCAS, W, OE] Output capacitance [DQ0 - DQ15] AC CHARACTERISTICS ( Test condition : V =5.0V 10%, Vih/Vil=2.6/0.7V, Voh/Vol=2.0/0.8V CC Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS ...
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... K4E661611D, K4E641611D AC CHARACTERISTICS (Continued) Parameter Data hold time Refresh period (4K, Normal) Refresh period (8K, Normal) Write command set-up time CAS to W delay time RAS to W delay time Column address W delay time CAS set-up time (CAS -before-RAS refresh) CAS hold time (CAS -before-RAS refresh) ...
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... K4E661611D, K4E641611D TEST MODE CYCLE Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS Access time from CAS Access time from column address RAS pulse width CAS pulse width RAS hold time CAS hold time Column Address to RAS lead time ...
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... K4E661611D, K4E641611D NOTES An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles 1. before proper device operation is achieved. V (min) and V (max) are reference levels for measuring timing of input signals. Transition times are measured between (min) and V (max) and are assumed to be 2ns for all inputs ...
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... K4E661611D, K4E641611D t is specified from W falling edge to the earlier CAS rising edge. 16. CWL t 17. is referenced to the earlier CAS falling edge before RAS transition low. CSR 18 referenced to the later CAS rising edge after RAS transition low. CHR RAS LCAS UCAS t 19. ...
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... K4E661611D, K4E641611D WORD READ CYCLE RAS UCAS LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH CRP t RCD t CSH CRP t RCD t RAD t t RAH ...
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... K4E661611D, K4E641611D LOWER BYTE READ CYCLE NOTE : D = OPEN RAS UCAS LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS CRP t CSH CRP t RCD t RAD t t RAH ...
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... K4E661611D, K4E641611D UPPER BYTE READ CYCLE NOTE : D = OPEN RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH t RCD t RAD t t RAH ...
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... K4E661611D, K4E641611D WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH CRP t RCD t CSH ...
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... K4E661611D, K4E641611D LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH ...
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... K4E661611D, K4E641611D UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH ...
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... K4E661611D, K4E641611D WORD WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH t RCD ...
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... K4E661611D, K4E641611D LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS CRP t CSH CRP ...
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... K4E661611D, K4E641611D UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH ...
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... K4E661611D, K4E641611D WORD READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RAS t t RCD RSH t t RCD RSH ...
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... K4E661611D, K4E641611D LOWER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 RAS t t RCD RSH t RAD t CSH ...
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... K4E661611D, K4E641611D UPPER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 I/OL t RAS t t RCD RSH t RAD t CSH ...
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... K4E661611D, K4E641611D HYPER PAGE MODE WORD READ CYCLE RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 RASP t CSH ...
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... K4E661611D, K4E641611D HYPER PAGE MODE LOWER BYTE READ CYCLE RAS CRP UCAS LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 RASP t CSH ...
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... K4E661611D, K4E641611D HYPER PAGE MODE UPPER BYTE READ CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 RASP t CSH ...
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... K4E661611D, K4E641611D HYPER PAGE MODE WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... K4E661611D, K4E641611D HYPER PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 ...
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... K4E661611D, K4E641611D HYPER PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 ...
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... K4E661611D, K4E641611D HYPER PAGE MODE WORD READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR ASC ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 CSH ...
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... K4E661611D, K4E641611D HYPER PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR ASC ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 ...
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... K4E661611D, K4E641611D HYPER PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR ASC ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 ...
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... K4E661611D, K4E641611D HYPER PAGE READ AND WRITE MIXED CYCLE RAS UCAS LCAS t RAD RAH t ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RASP t t READ( ) READ( ) CAC ...
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... K4E661611D, K4E641611D RAS - ONLY REFRESH CYCLE NOTE : Don t care OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR CAS - BEFORE - RAS REFRESH CYCLE NOTE : OE Don t care ...
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... K4E661611D, K4E641611D HIDDEN REFRESH CYCLE ( READ ) RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 Hidden refresh cycle of 64Mb A-die & B-die, when CAS signal transits from Low to High, the valid data may be cut off. ...
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... K4E661611D, K4E641611D HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t t RCD ...
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... K4E661611D, K4E641611D CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : Don t care RAS UCAS LCAS DQ0 ~ DQ7 CEZ DQ8 ~ DQ15 TEST MODE IN CYCLE NOTE : Don t care RAS ...
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... K4E661611D, K4E641611D PACKAGE DIMENSION 50 TSOP(II) 400mil 0.034 (0.875) 0.841 (21.35) MAX 0.821 (20.85) 0.829 (21.05) 0.0315 (0.80) 0.002 (0.05) MIN 0.010 (0.25) 0.018 (0.45) CMOS DRAM Units : Inches (millimeters) 0.004 (0.10) 0.010 (0.25) 0.047 (1.20) 0.010 (0.25) MAX TYP 0.018 (0.45) 0.030 (0.75) O 0~8 ...