K6X4016T3F-TB55

Manufacturer Part NumberK6X4016T3F-TB55
DescriptionK6X4016T3F-TB55256Kx16 bit Low Power and Low Voltage CMOS Static RAM
ManufacturerSamsung
K6X4016T3F-TB55 datasheet
 
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FEATURES

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K6X4016T3F Family
256Kx16 bit Low Power and Low Voltage CMOS Static RAM

FEATURES

Process Technology: Full CMOS
Organization: 256K x16
Power Supply Voltage: 2.7~3.6V
Low Data Retention Voltage: 2V(Min)
Three State Outputs
Package Type: 44-TSOP2-400F
PRODUCT FAMILY
Product Family
Operating Temperature Vcc Range
K6X4016T3F-B
Commercial(0~70 C)
K6X4016T3F-F
Industrial(-40~85 C)
K6X4016T3F-Q
Automotive(-40~125 C)
1. This parameter is measured with 30pF test load (Vcc=3.0~3.6V).
2. The parameter is measured with 30pF test load.
PIN DESCRIPTION
A4
44
1
A3
43
2
A2
3
42
A1
4
41
A0
5
40
CS
6
39
I/OI
7
38
I/O2
8
37
I/O3
9
36
I/O4
10
35
44-TSOP2
Vcc
11
34
Vss
12
33
Forward
13
I/O5
32
14
I/O6
31
I/O7
15
30
I/O8
16
29
WE
17
28
18
A17
27
19
A16
26
20
A15
25
21
A14
24
A13
22
23
Name
Function
Name Function
CS
Chip Select Input
Vcc
OE
Output Enable Input
Vss
WE
Write Enable Input
LB
A
~A
Address Inputs
UB
0
17
I/O
~I/O
Data Input/Output
NC
1
16
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
GENERAL DESCRIPTION
The K6X4016T3F families are fabricated by SAMSUNG s
advanced CMOS process technology. The families support var-
ious operating temperature range and have 44-TSOP2 pack-
age type for user flexibility of system design. The families also
support low data retention voltage for battery back-up operation
with low data retention current.
Power Dissipation
Speed(ns)
Standby
(I
SB1
10 A
1)
2)
55
/70
/85ns
2.7~3.6V
10 A
2)
20 A
70
/85ns
FUNCTIONAL BLOCK DIAGRAM
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
Row
I/O13
Addresses
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
NC
A8
I/O
~I/O
A9
1
8
A10
A11
I/O
~I/O
9
16
A12
Power
Ground
Lower Byte (I/O
)
1~8
WE
Upper Byte (I/O
)
9~16
OE
Control
logic
UB
No Connection
LB
CS
2
CMOS SRAM
PKG Type
Operating
, Max)
(I
, Max)
CC2
25mA
44-TSOP2-400F
Clk gen.
Precharge circuit.
Vcc
Vss
Row
Memory array
select
Data
I/O Circuit
cont
Column select
Data
cont
Data
cont
Column Addresses
Revision 1.0
August 2003