CM100DY-24A_09 MITSUBISHI, CM100DY-24A_09 Datasheet - Page 2

• Manufacturer Part Number: CM100DY-24A_09
• Manufacturer: MITSUBISHI

ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
*
*
Note 1. I
I
I
C
C
C
Q
t
t
t
t
t
Q
V
R
R
R
R
1 : Case temperature (T
2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
V
V
I
I
I
I
P
T
T
V
V
V
C
CM
E
EM (Note 1)
CES
GES
d(on)
r
d(off)
f
rr
Symbol
Symbol
GES
j
stg
iso
EC(Note 1)
CES
C (Note 3)
GE(th)
CE(sat)
ies
oes
res
th(j-c)
th(j-c)
th(c-f)
G
G
rr (Note 1)
—
—
—
2. Pulse width and repetition rate should be such that the device junction temperature (T
3. Junction temperature (T
(Note 1)
(Note 1)
Q
R
E
, V
EC
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
Collector cutoff current
Gate-emitter threshold
voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
Contact thermal resistance
External gate resistance
, t
rr
& Q
rr
represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
C
Parameter
Parameter
), heat sink temperature (T
j
) should not increase beyond 150°C.
(Tj = 25
(Tj = 25
G-E Short
C-E Short
DC, T
Pulse
Pulse
T
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
V
I
±V
I
V
V
V
V
V
R
I
I
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound Applied (1/2 module)
C
C
E
E
C
f
CE
CE
GE
CC
CC
GE
G
) measured point is just under the chips.
°
= 10mA, V
= 100A, V
= 100A
= 100A, V
GE
C, unless otherwise specified)
= 25°C
= 3.1Ω, Inductive load
°
= V
C, unless otherwise specified)
= 10V
= 0V
= 600V, I
= 600V, I
= ±15V
C
= V
= 84°C
CES
GES
*1
, V
GE
GE
CE
, V
C
C
GE
*1
= 15V
= 100A, V
= 100A
= 0V
CE
= 10V
= 0V
= 0V
Test conditions
Conditions
*1
*1
2
GE
= 15V
j
) does not exceed T
T
T
j
j
= 25°C
= 125°C
(Note 2)
(Note 2)
*1,*2
HIGH POWER SWITCHING USE
MITSUBISHI IGBT MODULES
jmax
Min.
3.1
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—
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—
—
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6
rating.
CM100DY-24A
–40 ~ +150
–40 ~ +125
2.5 ~ 3.5
3.5 ~ 4.5
Ratings
Limits
0.022
1200
2500
Typ.
±20
100
200
100
200
672
310
500
2.1
2.4
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7
0.186
Max.
17.5
0.34
0.34
100
400
350
150
0.5
3.0
1.5
3.8
70
42
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1
8
Feb. 2009
N • m
Vrms
K/W
Unit
Unit
mA
µA
nC
µC
nF
°C
°C
ns
ns
W
V
Ω
V
V
A
A
V
V
g