IXFN80N50 IXYS Corporation, IXFN80N50 Datasheet
IXFN80N50
Manufacturer Part Number
IXFN80N50
Description
HiPerFET Power MOSFETs Single Die MOSFET
Manufacturer
IXYS Corporation
Datasheet
1.IXFN80N50.pdf
(4 pages)
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HiPerFET
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
© 2002 IXYS All rights reserved
DM
D25
AR
GSS
DSS
JM
GSM
AR
J
stg
GH(th)
DSS
DGR
GS
AS
D
ISOL
DSS
DS(on)
d
Test Conditions
Test Conditions
S
ISOL
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
TM
DM
GS
DSS
D
D
DC
D
G
DS
D25
GS
DD
J
J
J
rr
DSS
JM
min.
IXFN 80N50
IXFN 75N50
Characteristic Values
Maximum Ratings
typ.
S
G
max.
D
S
500 V
500 V
V
G = Gate
S = Source
Either Source terminal of miniBLOC can be used
as Main or Kelvin Source
Features
•
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
miniBLOC, SOT-227 B (IXFN)
DSS
E153432
DS (on)
80 A
75 A
I
D25
G
D = Drain
S
TM
50
55
D
R
98538C (02/02)
DS(on)
m
m
S
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IXFN80N50 Summary of contents
Page 1
TM HiPerFET Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Symbol Test Conditions V DSS J V DGR GSM I D25 ...
Page 2
Symbol Test Conditions 0.5 • D25 C iss MHz oss rss t d(on) t ...
Page 3
Figure 1. Output Characteristics at 25 100 Volts DS Figure 3. R normalized to 0.5 I ...
Page 4
Figure 7. Gate Charge 250 100 150 200 250 300 350 400 Gate Charge - nC Figure 9. ...