IXFN39N90 IXYS Corporation, IXFN39N90 Datasheet

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IXFN39N90

Manufacturer Part Number
IXFN39N90
Description
HiPerFET Power MOSFETs Single MOSFET Die
Manufacturer
IXYS Corporation
Datasheet
HiPerFET
Power MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
© 2001 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
V
BV
V
V
I
I
R
DM
D25
AR
GSS
DSS
JM
GSM
AR
J
stg
GH(th)
GH(th)
DSS
DGR
GS
AS
D
ISOL
DSS
DS(on)
d
DSS
Test Conditions
Test Conditions
S
C
ISOL
C
C
C
C
C
J
J
J
DS
GS
GS
GS
GS
DS
DM
TM
GS
DSS
D
D
DC
D
G
DS
GS
D25
DD
J
J
J
DSS
JM
min.
IXFN 39N90
Characteristic Values
Maximum Ratings
typ.
S
G
max.
D
S
Features
Applications
Advantages
G = Gate
S = Source
miniBLOC, SOT-227 B (IXFN)
V
I
R
t
D25
rr
DSS
DS(on)
E153432
250 ns
DS (on)
=
=
=
G
0.22
900 V
D = Drain
TAB = Drain
S
TM
39 A
D
98628B (9/01)
S

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IXFN39N90 Summary of contents

Page 1

TM HiPerFET Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Symbol Test Conditions V DSS J V DGR GSM I D25 ...

Page 2

Symbol Test Conditions 0.5 • D25 C iss MHz oss rss t d(on) t ...

Page 3

Figure 1. Output Characteristics ...

Page 4

Figure 7. Gate Charge 450 19.50A 100 150 200 250 300 350 400 Gate Charge - nC Figure 9. Forward ...

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