IXSN80N60BD1 IXYS Corporation, IXSN80N60BD1 Datasheet

IXSN80N60BD1

Manufacturer Part Number

IXSN80N60BD1

Description

IGBT with Diode Short Circuit SOA Capability

Manufacturer

IXYS Corporation

Datasheet

1.IXSN80N60BD1.pdf (6 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXSN80N60BD1

Manufacturer:

VICOR

Quantity:

560

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IGBT with Diode

Short Circuit SOA Capability

Preliminary Data Sheet

Symbol

SSOA

(RBSOA)

(SCSOA)

Weight

Symbol

B V

IXYS reserves the right to change limits, test conditions and dimensions.

C25

C90

C M

S C

C E S

G E S

GEM

CE(sat)

s t g

C G R

J M

G E ( t h )

C E S

G E S

I S O L

C E S

Test Conditions

Continuous

Transient

Lead current limit (RMS)

Clamped inductive load

50/60 Hz

Mounting torque

Test Conditions

ISOL

= 22 Ω, non repetitive

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C (Silicon chip capability)

= 90°C

= 25°C, 1 ms

= 15 V, T

= 15 V, V

= 25°C

≤ 1 mA

= 500 µA, V

= 8 mA, V

= V

= 0 V

= 0 V, V

= I

C90

CES

, V

= 15 V; Note 1

= 125°C, R

= ±20 V

= 360 V, T

= V

= 0 V

t = 1 min

t = 1 s

= 1 MΩ

= 125°C

= 5 Ω

= 25°C

= 125°C

= 25°C, unless otherwise specified)

IXSN 80N60BD1 V

Characteristic Values

min.

600

-55 ... +150

Maximum Ratings

@ 0.8 V

typ. max.

= 160

2500

3000

0.4/6 Nm/lb.in.

600

±20

±30

160

100

300

420

150

CES

±200

200

2.5

µA

°C

µs

miniBLOC, SOT-227 B

E = Emitter

G = Gate,

Main or Kelvin Emitter

Features

Applications

Advantages

C25

International standard package

Aluminium-nitride isolation

- high power dissipation

Isolation voltage 3000 V~

UL registered E 153432

Low V

- for minimum on-state conduction

Fast Recovery Epitaxial Diode

- short t

Low collector-to-case capacitance

(< 60 pF)

- reduced RFI

Low package inductance (< 10 nH)

- easy to drive and to protect

Space savings

AC motor speed control

DC servo and robot drives

DC choppers

Uninterruptible power supplies (UPS)

Switch-mode and resonant-mode

power supplies

Easy to mount with 2 screws

High power density

Either Emitter terminal can be used as

CES

CE(sat)

losses

E153432

CE(sat)

and I

= 600 V

= 160 A

= 2.5 V

= 180 ns

C = Collector

E = Emitter

DS98890A(05/04)

Related parts for IXSN80N60BD1

IXSN80N60BD1 Summary of contents

Page 1

IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions 25°C to 150° 25°C to 150° Continuous ...

Page 2

Symbol Test Conditions Note1 MHz oes ...

Page 3

Fig. 1. Output Characte ristics @ 25 Deg 17V GE 15V 70 13V 60 11V 0.3 0.6 0.9 1.2 1 Volts C E Fig. 3. Output Characteristics @ ...

Page 4

Fig. 7. Transconductance -40º 25ºC 125º 120 160 I - Amperes C Fig. 9. Dependence of Turn-Off Energy Loss ...

Page 5

Fig. 13. Dependence of Turn-off Sw itching Tim e on Tem perature 300 t d(off) 275 2.7Ω 250 15V GE 225 V = 480V CE 200 175 ...

Page 6

A 140 120 25° 100 T =100° =150° Fig. 17. Forward current I versus V F 2.0 1 ...

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