DSEI2X101-06A IXYS Corporation, DSEI2X101-06A Datasheet
DSEI2X101-06A
Manufacturer Part Number
DSEI2X101-06A
Description
ARRAY OF INDEPENDENT DIODES|SOT-227B
Manufacturer
IXYS Corporation
Datasheet
1.DSEI2X101-06A.pdf
(4 pages)
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© 2000 IXYS All rights reserved
Fast Recovery
Epitaxial Diode (FRED)
Symbol
I
I
I
I
I
T
T
T
P
V
M
Weight
Symbol
I
V
V
r
R
R
t
I
¬ I
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
F(RMS)
F(AV)M
FRM
FSM
2
R
RM
rr
V
T
600
t
VJ
VJM
stg
tot
ISOL
F
T0
thJC
thCH
d
RSM
V
FAVM
¬
rating includes reverse blocking losses at T
V
600
RRM
V
Test Conditions
T
T
t
T
T
T
T
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque (M4)
Test Conditions
T
T
T
I
For power-loss calculations only
I
V
L
P
ISOL
F
F
VJ
C
VJ
VJ
VJ
VJ
C
VJ
VJ
VJ
R
< 10 s; rep. rating, pulse width limited by T
= 100 A;
= 1 A; -di/dt = 400 A/µs; V
= 70°C; rectangular, d = 0.5
= 25°C
= 100 V;
= T
= 45°C;
= 150°C; t = 10 ms (50 Hz), sine
= 45°C
= 150°C; t = 10 ms (50 Hz), sine
= 25°C
= 25°C
= 125°C
0.05 mH; T
1 mA
VJM
Type
DSEI 2x 101-06A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
V
V
V
T
T
I
VJ
F
VJ
VJ
R
R
R
= 80 A; -di
= 100°C
= V
= 0.8 • V
= 0.8 • V
= 150°C
= 25°C
RRM
F
RRM
RRM
/dt = 200 A/µs
R
VJM
= 30 V; T
, V
R
= 0.8 V
VJ
= 25°C
RRM
Characteristic Values (per diode)
, duty cycle d = 0.5
VJM
Maximum Ratings (per diode)
typ.
0.05
DSEI 2x 101
35
19
-40...+150
-40...+150
1.5/13
1.5/13
1200
1300
1080
1170
7200
7100
5800
5700
2500
TBD
150
150
250
Download from www.ICminer.com Electronic-Library Service
96
30
max.
1.17
1.25
0.70
4.7
0.5
20
50
24
3
1
Nm/lb.in.
Nm/lb.in.
K/W
K/W
m
A
A
A
A
mA
mA
mA
°C
°C
°C
V~
W
ns
A
A
A
A
A
A
A
V
V
V
A
g
2
2
2
2
s
s
s
s
V
I
t
miniBLOC, SOT-227 B
Features
l
l
l
l
l
l
l
l
l
l
FAVM
miniBLOC, SOT-227 B
rr
International standard package
miniBLOC (ISOTOP compatible)
Isolation voltage 2500 V~
matched diodes f. parallel operation
Planar passivated chips
two independent diodes
Very short recovery time
Extremely low switching losses
Low I
Soft recovery behaviour
M4 screws (4x) supplied
RRM
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
RM
E72873
31.50
14.91
30.12
37.80
11.68
12.60
25.15
26.54
24.59
0.780
-values
-0.05
Min.
7.80
4.09
4.09
4.09
8.92
0.76
1.98
4.95
3.94
4.72
3.30
= 600 V
= 2x 96 A
= 35 ns
Millimeter
31.88
15.11
30.30
38.20
12.22
12.85
25.42
26.90
25.07
0.830
Max.
8.20
4.29
4.29
4.29
9.60
0.84
2.13
5.97
4.42
4.85
4.57
0.1
-0.002
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.489
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
0.130
19.81
Min.
Inches
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
0.180
21.08
Max.
D5 - 57
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DSEI2X101-06A Summary of contents
Page 1
Fast Recovery Epitaxial Diode (FRED Type RSM RRM V V 600 600 DSEI 2x 101-06A Symbol Test Conditions F(RMS) VJ VJM ¬ 70°C; rectangular 0.5 F(AV ...
Page 2
A 125 I F 100 75 T =150° =100° =25° 0.0 0.5 1 Fig. 1 Forward current I versus 1.4 1 1.0 ...
Page 3
Fast Recovery Epitaxial Diode (FRED Type RSM RRM V V 1200 1200 DSEI 2x 101-12A Symbol Test Conditions F(RMS) VJ VJM ¬ 50°C; rectangular 0.5 F(AV ...
Page 4
A 125 I F 100 T =150° =100° 25° 0.0 0.5 1.0 1.5 2 Fig. 1 Forward current I versus 1.4 1.2 K ...