IXFN26N90 IXYS Corporation, IXFN26N90 Datasheet
IXFN26N90
Manufacturer Part Number
IXFN26N90
Description
HiPerFET Power MOSFETs Single Die MOSFET
Manufacturer
IXYS Corporation
Datasheet
1.IXFN26N90.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN26N90
Manufacturer:
IXYS
Quantity:
27
© 2000 IXYS All rights reserved
HiPerFET
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
D25
DM
AR
GSS
DSS
DGR
AR
D
J
JM
stg
J
DSS
GH(th)
DSS
GS
GSM
AS
ISOL
DS(on)
d
V
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
GS
DS
GS
DS
GS
GS
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
S
ISOL
J
J
C
C
C
C
C
J
C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
£ 1 mA
= 10 V, I
GS
TM
DM
, I
, di/dt £ 100 A/ms, V
D
D
= 3 mA
= 8 mA
DC
Power MOSFETs
DSS
D
, V
= 0.5 • I
G
DS
= 2 W
= 0
t = 1 min
t = 1 s
D25
GS
= 1 MW
DD
T
T
J
J
£ V
(T
= 25°C
= 125°C
rr
J
DSS
= 25°C, unless otherwise specified)
JM
,
26N90
25N90
26N90
25N90
26N90
25N90
26N90
25N90
min.
900
3.0
Characteristic Values
-55 ... +150
IXFN 26N90
IXFN 25N90
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
S
G
900
900
±20
±30
104
100
600
150
26
25
26
25
64
30
3
5
max.
-
±200
5.0
0.30
0.33
100
2
D
S
V/ns
mA
mJ
V~
V~
nA
mA
°C
°C
°C
°C
W
W
W
V
V
A
A
A
V
V
V
V
J
g
900 V
900 V
V
DSS
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
miniBLOC, SOT-227 B (IXFN)
International standard package
miniBLOC, with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
E153432
I
DS (on)
26 A
25 A
D (cont)
HDMOS
G
0.30 W
0.33 W
R
D = Drain
S
DS(on)
TM
process
D
97526E (10/99)
S
250 ns
250 ns
t
1 - 4
rr
Related parts for IXFN26N90
IXFN26N90 Summary of contents
Page 1
TM HiPerFET Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Preliminary data sheet Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V ...
Page 2
Symbol Test Conditions 0.5 • D25 C iss MHz oss rss t d(on) ...
Page 3
Figure 1. Output Characteristics 25° Volts DS Figure 3. R normalized to 0.5 I DS(on ...
Page 4
... Figure10. Drain Current vs. Case Temperature 1.2 1.5 - Pulse Width - Seconds IXFN 25N90 IXFN 26N90 Figure 8. Capacitance Curves Ciss f = 1MHz Coss Crss Volts DS IXFN26N90 IXFN25N90 - 100 o Case Temperatue - 125 150 ...