IXFN36N100 IXYS Corporation, IXFN36N100 Datasheet
IXFN36N100
Manufacturer Part Number
IXFN36N100
Description
HiPerFET Power MOSFETs Single Die MOSFET
Manufacturer
IXYS Corporation
Datasheet
1.IXFN36N100.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN36N100
Manufacturer:
IR
Quantity:
2 000
Part Number:
IXFN36N100
Quantity:
105
HiPerFET
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
© 2001 IXYS All rights reserved
DM
GSS
D25
AR
DSS
J
JM
stg
DGR
GS
GSM
AR
AS
D
ISOL
GH(th)
DSS
DSS
DS(on)
d
Test Conditions
Test Conditions
ISOL
C
C
C
C
C
S
J
J
C
GS
GS
GS
GS
DS
DS
J
TM
DM
GS
DSS
D
D
DC
D
G
DS
D25
GS
DD
J
J
J
DSS
JM
min.
Characteristic Values
IXFN 36N100
Maximum Ratings
typ.
S
G
max.
D
S
Features
•
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
G = Gate
S = Source
miniBLOC, SOT-227 B (IXFN)
E153432
V
I
R
DS (on)
D25
DSS
DS(on)
G
=
= 0.24
= 1000V
D = Drain
TAB = Drain
S
TM
D
98520C (02/01)
36A
S
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IXFN36N100 Summary of contents
Page 1
TM HiPerFET Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Symbol Test Conditions V DSS J V DGR GSM I D25 ...
Page 2
Symbol Test Conditions 0.5 • D25 C iss MHz oss rss t d(on) t ...
Page 3
V =10V Volts DS Figure 1. Output Characteristics 10V GS 2.0 T 1.8 J 1.6 ...
Page 4
V = 500 100 200 300 Gate Charge - nC Figure 7. Gate Charge 100 ...