IXFN150N10 IXYS Corporation, IXFN150N10 Datasheet
IXFN150N10
Manufacturer Part Number
IXFN150N10
Description
HiPerFET Power MOSFETs
Manufacturer
IXYS Corporation
Datasheet
1.IXFN150N10.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN150N10
Manufacturer:
IXYS
Quantity:
27
Company:
Part Number:
IXFN150N10
Manufacturer:
IXYS
Quantity:
200
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
V
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
DM
AR
D25
D120
GSS
DSS
L
J
JM
stg
DSS
DGR
GS
GSM
AR
D
ISOL
DSS
GH(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
S
ISOL
C
C
C
C
C
J
C
J
J
GS
DS
GS
DS
GS
GS
£ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 120°C, limited by external leads
= 25°C, pulse width limited by T
= 25°C
= 25°C
£ I
= 25°C
£ 1 mA
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
DM
TM
, di/dt £ 100 A/ms, V
GS
, I
D
D
DC
D
DSS
= 1 mA
= 8 mA
G
, V
= 75 A
= 2 W
DS
t = 1 min
t = 1 s
= 0
GS
= 1 MW
DD
T
T
£ V
J
J
(T
= 25°C
= 125°C
DSS
rr
J
= 25°C, unless otherwise specified)
JM
,
Maximum Ratings
0.9/6
IXFK
100
100
±20
±30
560
500
300
min.
100
100
76
75
30
10
IXFK100N10
IXFN150N10
5
Characteristic Values
-
-
-
-55 ... +150
-55 ... +150
2
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
150
IXFN
100
100
±20
±30
150
560
520
75
30
30
5
max.
-
-
±200
400
12
4
2
V/ns
mW
mA
mJ
V~
V~
°C
°C
°C
°C
nA
mA
W
V
V
V
V
A
A
A
A
V
V
g
100 V
100 V
Features
Applications
Advantages
miniBLOC, SOT-227 B (IXFN)
S
G
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
V
TO-264 AA (IXFK)
t
International standard packages
JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount
Space savings
High power density
DSS
rr
£ 200 ns
E153432
DS (on)
D
S
G
100 A
150 A
D
HDMOS
I
S
D25
D = Drain
TAB = Drain
TM
G
process
12 mW
12 mW
R
92803G(8/96)
S
DS(on)
D
1 - 4
(TAB)
S
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IXFN150N10 Summary of contents
Page 1
... DS(on Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFK100N10 IXFN150N10 rr Maximum Ratings IXFK IXFN 100 100 = 1 MW 100 100 GS ±20 ±20 ± ...
Page 2
Symbol Test Conditions pulse test iss MHz oss rss t d(on) t ...
Page 3
Fig. 1 Output Characteristics 400 T = 25°C J 350 300 250 200 150 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5 Volts DS Fig vs. Drain Current DS(on) 1.4 ...
Page 4
Fig.7 Gate Charge Characteristic Curve 50V 75A 1mA 100 150 200 250 300 350 400 Gate Charge - nCoulombs Fig.9 Source Current ...