IXFN120N20 IXYS Corporation, IXFN120N20 Datasheet
IXFN120N20
Manufacturer Part Number
IXFN120N20
Description
HiPer FET Power MOSFETs
Manufacturer
IXYS Corporation
Datasheet
1.IXFN120N20.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN120N20
Manufacturer:
TOSHIBA
Quantity:
2 000
Company:
Part Number:
IXFN120N20P
Manufacturer:
MICROCHIP
Quantity:
2 000
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data sheet
Symbol
V
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
DM
AR
GSS
DSS
D25
L
J
JM
stg
DSS
GS(th)
DSS
DGR
GS
GSM
AR
AS
D
ISOL
DS(on)
d
V
Note 1
V
V
Test Conditions
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
V
V
S
ISOL
GS
GS
DS
C
C
C
C
C
C
J
J
J
GS
GS
DS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
= 0 V, I
= V
£ 1 mA
= ±20 V, V
= V
= 10 V, I
= 0 V
DM
TM
GS
, di/dt £ 100 A/ms, V
DSS
, I
D
D
D
= 3mA
= 8mA
= 0.5 • I
G
DS
= 2 W
= 0
t = 1 min
t = 1 s
D25
GS
= 1 MW
DD
£ V
T
T
(T
J
J
rr
J
DSS
= 25°C
= 125°C
= 25°C, unless otherwise specified)
JM
IXFN 120N20
min.
200
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
200
200
±20
±30
120
480
120
600
150
64
30
3
5
max.
-
±200 nA
100 mA
17 mW
2 mA
4 V
V/ns
mJ
V~
V~
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
g
J
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• Encapsulating epoxy meets
•
•
•
•
•
•
•
Applications
•
•
•
•
•
•
Advantages
•
•
•
miniBLOC, SOT-227 B (IXFN)
UL 94 V-0, flammability classification
International standard package
miniBLOC, with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Low voltage relays
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
E153432
DS(on)
DSS
£ 250 ns
DS (on)
HDMOS
G
= 200 V
= 120 A
=
D = Drain
S
TM
17 mW
process
D
96538C (7/99)
S
1 - 2
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IXFN120N20 Summary of contents
Page 1
TM HiPerFET Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Preliminary data sheet Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V ...
Page 2
Symbol Test Conditions 0.5 • iss MHz oss rss t d(on ...