IXFN44N60 IXYS Corporation, IXFN44N60 Datasheet
IXFN44N60
Manufacturer Part Number
IXFN44N60
Description
HiPerFET Power MOSFETs Single Die MOSFET
Manufacturer
IXYS Corporation
Datasheet
1.IXFN44N60.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN44N60
Manufacturer:
IXYS
Quantity:
530
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
D25
DM
AR
GSS
DSS
JM
stg
DSS
DGR
GSM
AR
AS
D
J
J
GS
ISOL
d
DSS
GH(th)
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
S
ISOL
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
£ 1 mA
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
TM
DM
GS
, di/dt £ 100 A/ms, V
DSS
, I
D
D
DC
D
= 3 mA
= 8 mA
, V
G
= 0.5 • I
= 2 W
DS
t = 1 min
t = 1 s
= 0
D25
GS
= 1 MW
DD
T
T
£ V
J
J
(T
= 25°C
= 125°C
rr
J
DSS
= 25°C, unless otherwise specified)
JM
,
IXFN 44N60
min.
600
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
S
G
600
600
±20
±30
176
600
150
44
44
60
30
3
5
-
max.
±100
100
130
4.5
2
D
S
V/ns
mJ
mW
V~
V~
mA
°C
°C
°C
°C
nA
mA
W
V
V
V
V
A
A
A
V
V
J
g
Features
•
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
miniBLOC, SOT-227 B
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
International standard package
miniBLOC, with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
V
I
R
t
D25
rr
DSS
DS(on)
E153432
£ 250 ns
DS (on)
HDMOS
=
=
=
G
D = Drain
TAB = Drain
S
600
TM
130 mW
44
process
D
98610B (7/00)
S
V
A
1 - 4
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IXFN44N60 Summary of contents
Page 1
TM HiPerFET Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuous GS V ...
Page 2
Symbol Test Conditions 0.5 • D25 C iss MHz oss rss t d(on) t ...
Page 3
Figure 1. Output Characteristics at 25 100 Volts DS Figure 3. R normalized to 15A/25 DS(on) ...
Page 4
Figure 7. Gate Charge 300V 30A 10mA 100 150 200 250 300 350 400 Gate Charge - nC Figure 9. Forward Voltage ...