IXFN60N60 IXYS Corporation, IXFN60N60 Datasheet
IXFN60N60
Manufacturer Part Number
IXFN60N60
Description
HiPerFET Power MOSFETs Single Die MOSFET
Manufacturer
IXYS Corporation
Datasheet
1.IXFN60N60.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN60N60
Manufacturer:
IXYS
Quantity:
27
Company:
Part Number:
IXFN60N60
Manufacturer:
DIODES
Quantity:
10 000
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Preliminary data
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
V
V
I
I
R
D25
DM
AR
DSS
GSS
J
JM
stg
DGR
AR
AS
D
DSS
GS
GSM
ISOL
DSS
GH(th)
d
DS(on)
I
S
T
T
T
T
T
£ I
Test Conditions
T
T
Continuous
Transient
T
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
ISOL
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25°C, Chip capability
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
DM
£ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
, di/dt £ 100 A/ms, V
£ 1 mA
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
TM
GS
DSS
, I
D
D
DC
D
= 3 mA
= 8 mA
G
, V
= 0.5 • I
= 2 W
DS
t = 1 min
t = 1 s
= 0
D25
GS
DD
= 1 MW
£ V
T
T
DSS
J
J
(T
= 25°C
= 125°C
,
JM
rr
J
= 25°C, unless otherwise specified)
min.
600
Characteristic Values
2
IXFN 60N60
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
S
G
600
600
±20
±30
240
700
150
60
60
64
30
4
5
max.
±200
100
4.5
75
2
D
S
V/ns
mW
mJ
mA
V~
V~
nA
mA
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
J
g
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
miniBLOC, SOT-227 B (IXFN)
Features
•
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
V
I
R
D25
International standard packages
miniBLOC, with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
DS(on)
DSS
E153432
DS (on)
HDMOS
= 600 V
=
=
G
D = Drain
TAB = Drain
60 A
75 mW
S
TM
process
D
98593B (7/00)
S
1 - 2
Related parts for IXFN60N60
IXFN60N60 Summary of contents
Page 1
TM HiPerFET Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Preliminary data Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuous ...
Page 2
Symbol Test Conditions 0.5 • iss MHz oss d(on ...