IXGN50N60BD3 IXYS Corporation, IXGN50N60BD3 Datasheet

IXGN50N60BD3

Manufacturer Part Number

IXGN50N60BD3

Description

HiPerFAST IGBT with HiPerFRED

Manufacturer

IXYS Corporation

Datasheet

1.IXGN50N60BD3.pdf (5 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXGN50N60BD3

Manufacturer:

THINE

Quantity:

712

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IXGN50N60BD3

Manufacturer:

IXYS

Quantity:

Current page: 1 of 5
Download datasheet (148Kb)

HiPerFAST

with HiPerFRED

Buck & boost configurations

Symbol

IXYS reserves the right to change limits, test conditions, and dimensions.

CES

GES

GE(th)

CE(sat)

CES

SSOA

(RBSOA) Clamped inductive load, L = 30 mH

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

Symbol

Weight

FRM

C25

C90

FAVM

RRM

stg

CES

CGR

GES

GEM

Test Conditions

= 250 mA, V

= 0.8 • V

= 0 V

= 0 V, V

= I

Test Conditions

Continuous

Transient

Mounting torque

Terminal connection torque (M4)

C90

z<10 ms; pulse width limited by T

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

= 90°C

= 25°C, 1 ms

= 25°C

= 70°C; rectangular, d = 50%

= 25°C

= 15 V, T

, V

CES

IGBT

= 15 V

= ±20 V

= 0 V

= V

= 125°C, R

= 1 MW

= 25°C

= 125°C

= 10 W

= 25°C, unless otherwise specified)

...BD2

IXGN 50N60BD2

IXGN 50N60BD3

min.

600

2.5

Characteristic Values

-40 ... +150

@ 0.8 V

Maximum Ratings

typ.

1.5/13 Nm/lb.in.

= 100

600

±20

±30

200

250

600

150

300

CES

max.

±100

...BD3

200

2.5

1 mA

°C

IXGN50N60BD2

1 = Emitter; 2 = Gate

3 = Collector; 4 = Diode cathode

IXGN50N60BD3

1 = Emitter/Diode Cathode; 2 = Gate

3 = Collector; 4 = Diode anode

Features

• International standard package

• Aluminium nitride isolation

• Isolation voltage 3000 V~

• Very high current, fast switching

• MOS Gate turn-on

• Low collector-to-case capacitance

• Low package inductance (< 10 nH)

• Molding epoxies meet UL 94 V-0

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Buck converters

Advantages

• Easy to mount with 2 screws

• Space savings

• High power density

SOT-227B, miniBLOC

C25

miniBLOC

- high power dissipation

IGBT & FRED diode

- drive simplicity

- easy to drive and to protect

flammability classification

CES

CE(sat)

E 153432

= 600 V

= 2.5 V

= 150 ns

75 A

98502C (8/99)

1 - 5

Related parts for IXGN50N60BD3

IXGN50N60BD3 Summary of contents

Page 1

... SOT-227B, miniBLOC E 153432 IXGN50N60BD2 Emitter Gate 3 = Collector Diode cathode A IXGN50N60BD3 Emitter/Diode Cathode Gate 3 = Collector Diode anode V A Features A • International standard package W miniBLOC °C • Aluminium nitride isolation - high power dissipation °C • Isolation voltage 3000 V~ ° ...

Page 2

Symbol Test Conditions C90 CE Pulse test, t £ 300 ms, duty cycle £ ies ...

Page 3

T = 25° Volts CE Fig. 1. Saturation Voltage Characteristics 100 T = 125° 15V J GE 13V 80 11V ...

Page 4

T = 125° 4 Amperes C Fig. 7. Dependence =50A 250V ...

Page 5

A 140 120 25° 100 T =100° =150° Fig. 12 Forward current I versus 2.0 1.5 K ...

Related keywords

IXGN50N60BD3 datasheet
IXGN50N60BD3 data sheet
IXGN50N60BD3 pdf datasheet
IXGN50N60BD3 component
IXGN50N60BD3 part
IXGN50N60BD3 distributor
IXGN50N60BD3 RoHS
IXGN50N60BD3 datasheet download