CM100TU-12F Mitsumi Electronics, Corp., CM100TU-12F Datasheet
CM100TU-12F
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CM100TU-12F Summary of contents
Page 1
... GuP EuP GvP EvP GwP G E EwP 5–M4NUTS 11 19.1 Tc measured point 2.8 LABEL CM100TU-12F HIGH POWER SWITCHING USE ¡I C ................................................................... ¡V CES ............................................................ ¡Insulated Type ¡6-elements in a pack 102 4–φ5.5 ±0.25 MOUNTING HOLES GuN 19.1 11 11.85 EuN GvN ...
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... GE IGBT part (1/6 module) FWDi part (1/6 module) *2 Case to heat sink, Thermal compound applied Case temperature measured point is just under the chips ) does not exceed MITSUBISHI IGBT MODULES CM100TU-12F HIGH POWER SWITCHING USE Ratings 600 ±20 100 200 (Note 2) 100 (Note 2) 200 350 – ...
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... 40A ( ies C oes C res ( MITSUBISHI IGBT MODULES CM100TU-12F HIGH POWER SWITCHING USE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL 15V GE 2 25° 125° 120 160 COLLECTOR CURRENT I ...
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... Per unit base = – – Single Pulse 25° – 900 4 MITSUBISHI IGBT MODULES CM100TU-12F – 0.35K/W th(j–c) = 0.70K/W th(j– – – – – ...