CM100DY-24H Mitsumi Electronics, Corp., CM100DY-24H Datasheet
CM100DY-24H
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CM100DY-24H Summary of contents
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... D = Dual C = Six in one R = Seven in one (4) IGBT Module Single D = Dual T = Six E3 = Brake Examples: CM 100 D (1) (2) CM100DY-24H is a 100 Ampere, 1200 Volt, Dual IGBT Module PM 600 H (1) (2) PM600HSA120 is a 600 Ampere, 1200 Volt, Single IPM (5) Outline or Minor Change U = U-Series (6) For IGBT Module: Voltage, V ...
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GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES 3.2 Power Circuit Design In high power systems rapid turn-on and turn-off operations produce harsh dynamic conditions. The power circuit, snubbers, and gate drive must be designed to deal with extreme di/dt ...
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GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES generation H-Series IGBT modules have a new, ultra fast, soft recovery free-wheel diode that virtually eliminates problems with snappy recovery. 3.2.3 Ground Loops Ground loops are caused when gate drive or control ...
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GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES Figure 3.3 Cross-Section of a Laminated Bus Structure GATE DRIVE PCB E IGBT MODULE This presents a challenge to the IGBT circuit designer because the physical size and thermal requirements of these ...
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GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES Figure 3.4 Example Layout for a High Current 3-Phase Inverter (+) AND (-) BUS SANDWICH + + + + + IGBT module or from six pack module. ...
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GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES In a typical IGBT power circuit the di/dt will approach 0.01A/ limit value for established then this di/dt can be used to estimate the ...
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GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES usually possible to use a single low inductance capacitor connected across the P and N terminals as the snubber shown in Figure 3.5A. Similarly, on dual type modules a low inductance capacitor ...
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GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES switching at rated current. In order to be effective the snubber must have low inductance. The effect of snubber inductance is covered in Section 3.3.2. Target values for snubber loop inductance based ...
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GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES with waveform processing capability will greatly simplify switching loss calculations. From Figure 3.8 it can be observed that there are pulses of power loss at turn-on and turn-off of the IGBT. The ...
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GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES Equations for Power Loss Calculation for Sinusoidal Inverters IGBT Loss (1) Steady-state loss per switching IGBT • V (SAT) • sin X • ...
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GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES 3.4.3 Loss Estimation by Calibrated Heat Sink Method In many applications it is difficult to make the precision measurements of voltage and current that are necessary to accurately calculate switching losses. It ...
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GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES Power Module data sheet for use in thermal calculations. Junction temperature is estimated using the following equation th(j-c) Where Specified ...
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GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES 3.4.6 Heatsink Mounting When mounting IGBT modules on a heatsink avoid uneven mounting stress. Heatsink flatness requirements are shown in Figure 3.15. Avoid one sided tightening stress. Figure 3.18 shows the recommended ...
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GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES Figure 3.14 Junction Temperature Calculations Using Transient Thermal Impedance Waveform of Power Loss Load Condition at Junction Continuous Load P O – O Single Load Pulse P O – ...
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GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES function of the T excursion. j These curves are specific to particular temperature, time, and operating ranges, so that a general curve cannot be generated and published. The curve in Figure 3.16 ...
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GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES 3.5.1 Test Results Following are the results of semiconductor reliability tests on a typical IGBT Module. SEMICONDUCTOR RELIABILITY TESTS Semiconductor reliability tests are intended to simulate or accelerate all the possible stresses ...
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GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES Table 3.3 Reliability Test Results Test Category Test Conditions -40 ~ 125 C Temperature Cycling 60 minutes each 100 Cycles 0 ~ 100 C Thermal Shock 5 minutes 100 Cycles Dropping from ...
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GENERAL CONSIDERATIONS FOR IGBT AND INTELLIGENT POWER MODULES Figure 3.19 The Results of Reliability Test of a 600V/100A IGBT Module (A) Temperature Cycles Test (-40 ~ 125°C, 60 minutes) TEMPERATURE CYCLES TEST (V) CES -40 ~ ...