DSEI2X101-12A IXYS Corporation, DSEI2X101-12A Datasheet
DSEI2X101-12A
Manufacturer Part Number
DSEI2X101-12A
Description
1200V fast recovery epitaxial diode (FRED)
Manufacturer
IXYS Corporation
Datasheet
1.DSEI2X101-12A.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSEI2X101-12A
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Part Number:
DSEI2X101-12A
Quantity:
55
Symbol
I
I
I
I
I
T
T
T
P
V
M
Weight
Symbol
I
V
V
r
R
R
t
I
© 2000 IXYS All rights reserved
Fast Recovery
Epitaxial Diode (FRED)
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
1200
F(RMS)
F(AV)M
FRM
FSM
2
R
rr
RM
T
V
t
VJ
VJM
stg
tot
ISOL
F
T0
thJC
thCH
d
RSM
V
I
FAVM
rating includes reverse blocking losses at T
1200
V
RRM
V
Test Conditions
T
T
t
T
T
T
T
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque (M4)
Test Conditions
T
T
T
I
For power-loss calculations only
I
V
L £ 0.05 mH; T
P
ISOL
F
F
VJ
C
VJ
VJ
VJ
VJ
C
VJ
VJ
VJ
R
< 10 ms; rep. rating, pulse width limited by T
= 100 A;
= 1 A; -di/dt = 400 A/µs; V
= 25°C
= 50°C; rectangular, d = 0.5
= 100 V;
= T
= 45°C;
= 150°C; t = 10 ms (50 Hz), sine
= 45°C
= 150°C; t = 10 ms (50 Hz), sine
= 25°C
= 25°C
= 125°C
£ 1 mA
VJM
Type
DSEI 2x 101-12A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
V
V
V
T
T
I
VJ
F
VJ
VJ
R
R
R
= 75 A; -di
= 100°C
= V
= 0.8 • V
= 0.8 • V
= 150°C
= 25°C
RRM
F
RRM
RRM
/dt = 200 A/µs
R
VJM
= 30 V; T
, V
R
= 0.8 V
VJ
= 25°C
RRM
Characteristic Values (per diode)
, duty cycle d = 0.5
VJM
Maximum Ratings (per diode)
typ.
0.05
DSEI 2x 101
40
24
-40...+150
-40...+150
1.5/13
1.5/13
4100
4000
3300
3200
2500
TBD
130
900
970
810
870
150
250
91
30
max.
1.61
1.87
1.01
1.5
6.1
0.5
15
60
30
3
Nm/lb.in.
Nm/lb.in.
K/W
K/W
m
A
A
A
A
mA
mA
mA
V~
°C
°C
°C
ns
W
A
A
A
A
A
A
A
g
V
V
V
A
2
2
2
2
W
s
s
s
s
V
I
t
miniBLOC, SOT-227 B
Features
FAVM
rr
miniBLOC, SOT-227 B
International standard package
miniBLOC (ISOTOP compatible)
Isolation voltage 2500 V~
matched diodes f. parallel operation
Planar passivated chips
two independent diodes
Very short recovery time
Extremely low switching losses
Low I
Soft recovery behaviour
M4 screws (4x) supplied
RRM
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
RM
E72873
31.50
14.91
30.12
37.80
11.68
12.60
25.15
26.54
24.59
0.780
-values
-0.05
7.80
4.09
4.09
4.09
8.92
0.76
1.98
4.95
3.94
4.72
3.30
= 1200 V
= 2x 91 A
= 40 ns
Min.
Millimeter
31.88
15.11
30.30
38.20
12.22
12.85
25.42
26.90
25.07
0.830
Max.
8.20
4.29
4.29
4.29
9.60
0.84
2.13
5.97
4.42
4.85
4.57
0.1
-0.002
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.489
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
0.130
19.81
Min.
Inches
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
0.180
21.08
Max.
1 - 2
008
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DSEI2X101-12A Summary of contents
Page 1
Fast Recovery Epitaxial Diode (FRED Type RSM RRM V V 1200 1200 DSEI 2x 101-12A Symbol Test Conditions F(RMS) VJ VJM 50°C; rectangular 0.5 F(AV)M C < 10 ms; ...
Page 2
A 125 I F 100 T =150° =100° 25° 0.0 0.5 1.0 1.5 2 Fig. 1 Forward current I versus 1.4 1.2 K ...