TM90CZ-H Mitsumi Electronics, Corp., TM90CZ-H Datasheet - Page 3

• Manufacturer Part Number: TM90CZ-H
• Manufacturer: Mitsumi Electronics, Corp.

PERFORMANCE CURVES
10
160
140
120
100
10
10
10
10
10
10
80
60
40
20
MAXIMUM ON-STATE CHARACTERISTIC
–1
0
7
5
3
2
7
5
3
2
7
5
3
2
4
3
2
7
5
3
2
7
5
3
2
7
5
4
0.4
3
2
1
0
1
0
10
0
V
I
T
1
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE ON-STATE
RESISTIVE,
INDUCTIVE
LOAD
GT
GT
100mA
j
2
=25°C
V
360°
(SINGLE PHASE HALFWAVE)
=3.0V
=
FGM
T
3
GATE CHARACTERISTICS
0.8
j
20
=125°C
ON-STATE VOLTAGE (V)
POWER DISSIPATION
V
5
GATE CURRENT (mA)
=10V
GD
7
=30°
10
=0.25V
1.2
2
40
2
3
60°
P
G(AV)
5
0.50W
1.6
60
90°
PER SINGLE
ELEMENT
7
=
10
120°
P
3
GM
2
2.0
80
=5.0W
3
180°
5
7
100
2.4
10
4
2000
1600
1200
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
800
400
130
120
110
100
90
80
70
60
50
0
0
10
10
1
0
LIMITING VALUE OF THE AVERAGE
IMPEDANCE (JUNCTION TO CASE)
RATED SURGE (NON-REPETITIVE)
MAXIMUM TRANSIENT THERMAL
–3
0
AVERAGE ON-STATE CURRENT (A)
2
2
MITSUBISHI THYRISTOR MODULES
(SINGLE PHASE HALFWAVE)
2
3
3
20
ON-STATE CURRENT
ON-STATE CURRENT
3
=30°
5
5
PER SINGLE
ELEMENT
CONDUCTION TIME
(CYCLES AT 60Hz)
7
7
10
10
5
HIGH POWER GENERAL USE
1
–2
40
TM90DZ/CZ-M,-H
TIME (s)
7
60° 90°
2
10
3
5
60
7
20
10
120° 180°
360°
30
RESISTIVE,
INDUCTIVE
LOAD
–1
2
80
INSULATED TYPE
3
50
5
70
7
100
100
10
0
Feb.1999