IXGN50N60B IXYS Corporation, IXGN50N60B Datasheet

IXGN50N60B

Manufacturer Part Number

IXGN50N60B

Description

Manufacturer

IXYS Corporation

Datasheet

1.IXGN50N60B.pdf (4 pages)

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Bonase Electronics (HK) Co., Limited

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Bonase Electronics (HK) Co., Limited

Part Number:

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HiPerFAST

Preliminary data sheet

Symbol

SSOA

(RBSOA)

Weight

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

Symbol

IXYS reserves the right to change limits, test conditions, and dimensions.

C25

C90

CES

GES

stg

CES

CGR

GEM

GE(th)

CE(sat)

GES

CES

Test Conditions

Continuous

Transient

Clamped inductive load, L = 30 mH

Mounting torque

Terminal connection torque (M4)

Test Conditions

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

= 90°C

= 25°C, 1 ms

= 15 V, T

= 25°C

= 250 mA, V

= 0.8 • V

= 0 V

= 0 V, V

= I

C90

, V

CES

= 125°C, R

= 15 V

= ±20 V

IGBT

= V

= 0 V

= 1 MW

= 10 W

= 125°C

= 25°C, unless otherwise specified)

IXGN 50N60B

min.

600

2.5

Characteristic Values

-55 ... +150

@ 0.8 V

Maximum Ratings

typ.

1.5/13 Nm/lb.in.

= 100

600

±20

±30

200

250

150

300

CES

max.

±100

200

2.5

°C

SOT-227B miniBLOC

Features

• International standard package

• Aluminium nitride isolation

• Isolation voltage 3000 V~

• Very high current, fast switching IGBT

• Low V

• MOS Gate turn-on drive simplicity

• Low collector-to-case capacitance

• Low package inductance (< 5 nH)

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptible power supplies (UPS)

• Switch-mode and resonant-mode

Advantages

• Easy to mount with 2 screws

• Space savings

• High power density

G = Gate, C = Collector, E = Emitter

SOT-227B

- high power dissipation

conduction losses

(< 50 pF)

- easy to drive and to protect

power supplies

Either emitter terminal can be used

C25

as Main or Kelvin Emitter

CE(sat)

CES

CE(sat)

for minimum on-state

= 600 V

= 75 A

= 2.5 V

97531A (7/00)

1 - 4

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IXGN50N60B Summary of contents

Page 1

TM HiPerFAST IGBT Preliminary data sheet Symbol Test Conditions 25°C to 150°C CES 25°C to 150°C; R CGR Continuous GES V Transient GEM 25°C C25 C I ...

Page 2

Symbol Test Conditions Pulse test, t £ 300 ms, duty cycle £ C90 CE C ies ...

Page 3

25° Volts CE Figure 1. Saturation Voltage Characteristics 100 T = 125° 15V J GE 13V 80 11V ...

Page 4

T = 125° 4 Amperes C Figure 7. Dependence of E and =25A 250V CE ...

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