MBM29F200TC-70PFTN Fujitsu, MBM29F200TC-70PFTN Datasheet
MBM29F200TC-70PFTN
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MBM29F200TC-70PFTN Summary of contents
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... FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 2M (256K MBM29F200TC FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 44-pin SOP (Package suffix: PF) • ...
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... MBM29F200TC -55/-70/-90 PACKAGE 48-pin TSOP (I) Marking Side (FPT-48P-M19) 2 /MBM29F200BC Marking Side (FPT-48P-M20) -55/-70/-90 44-pin SOP Marking Side (FPT-44P-M16) ...
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... MBM29F200TC GENERAL DESCRIPTION The MBM29F200TC/ 2M-bit, 5.0 V-only Flash memory organized as 256K bytes of 8 bits each or 128K words of 16 bits each. The MBM29F200TC/BC is offered in a 48-pin TSOP and 44-pin SOP packages. This device is designed to be programmed in-system with the standard system 5 required for write or erase operations ...
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... MBM29F200TC Sector Architecture 4 /MBM29F200BC ( 16) 1FFFFH 64K byte 1DFFFH 64K byte 1CFFFH 64K byte 1BFFFH 32K byte 17FFFH 8K byte 0FFFFH 8K byte ...
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... Buffer State Control BYTE RESET Command Register CE OE Low V Detector /MBM29F200BC -55/-70/-90 MBM29F200TC/MBM29F200BC -55 — — - RY/BY Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer for Address Program/Erase Latch ...
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... FPT-48P-M19 A 24 (Marking Side N.C. 17 N.C. 16 RY/BY 15 N.C. 14 N.C. 13 MBM29F200TC/MBM29F200BC RESET 12 Reverse Pinout WE 11 N. FPT-48P-M20 6 /MBM29F200BC TSOP ( ...
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... MBM29F200TC LOGIC SYMBOL RY/BY RESET BYTE /MBM29F200BC -55/-70/-90 Table 1 MBM29F200TC/BC Pin Configuration Pin Function Address Inputs Data Inputs/Outputs Chip Enable Output Enable OE Write Enable WE Ready-Busy Output RY/BY Hardware Reset Pin/ ...
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... MBM29F200TC -55/-70/-90 ORDERING INFORMATION Standard Products Fujitsu standard products are available in several packages. The order number is formed by a combination of: MBM29F200 T C -55 DEVICE NUMBER/DESCRIPTION MBM29F200 2Mega-bit (256K 5.0 V-only Read, Write, and Erase 8 /MBM29F200BC PFTN PACKAGE TYPE PFTN = 48-Pin Thin Small Outline Package (TSOP (I)) Standard Pinout ...
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... Read (3) Standby Output Disable Write Enable Sector Protection (2) Verify Sector Protection (2) Temporary Sector Unprotection Reset (Hardware)/Standby Table 3 MBM29F200TC/BC User Bus Operation (BYTE = V Operation Auto-Select Manufacturer Code (1) Auto-Select Device Code (1) Read (3) Standby Output Disable Write Enable Sector Protection (2) Verify Sector Protection (2) ...
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... FUNCTIONAL DESCRIPTION Read Mode The MBM29F200TC/BC has two control functions which must be satisfied in order to obtain data at the outputs the power control and should be used for a device selection the output control and should be used to gate data to the output pins if a device is selected. ...
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... Refer to AC Write Characteristics and the Erase/Programming Waveforms for specific timing parameters. Sector Protection The MBM29F200TC/BC features hardware sector protection. This feature will disable both program and erase operations in any number of sectors (0 through 6). The sector protection feature is enabled using programming equipment at the user’s site. The device is shipped with all sectors unprotected. ...
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... Autoselect codes. Temporary Sector Unprotection This feature allows temporary unprotection of previously protected sectors of the MBM29F200TC/BC device in order to change data. The Sector Unprotection mode is activated by setting the RESET pin to high voltage (12 V). During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses ...
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... Table 6 Sector Address SA0 0 0 SA1 0 0 SA2 0 0 SA3 0 0 SA4 0 1 SA5 1 0 SA6 1 1 /MBM29F200BC -55/-70/-90 Sector Address Tables (MBM29F200TC Sector Address Tables (MBM29F200BC) A ...
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... The read or eset operation is initiated by writing the read/reset command sequence into the command register. Microprocessor read cycles retrieve array data from the memory. The devices remain enabled for reads until the command register contents are altered. 14 /MBM29F200BC -55/-70/-90 MBM29F200TC/BC Command Definitions Second Third Bus Bus Write Cycle Write Cycle — ...
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... The operation is initiated by writing the autoselect command sequence into the command register. Following the command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A read cycle from address XX01H for 16 (XX02H for 8) returns the device code (MBM29F200TC = 51H and MBM29F200BC = 57H for 8 mode; MBM29F200TC = 2251H and MBM29F200BC = 2257H for 16 mode). ...
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... MBM29F200TC Chip erase does not require the user to program the device prior to erase. Upon executing the Embedded Erase Algorithm command sequence the device will automatically program and verify the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations ...
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... MBM29F200TC When the Erase Suspend command is written during the Sector Erase operation, the device will take a maximum suspend the erase operation. When the device has entered the erase-suspended mode, the RY/BY output pin and the DQ bit will be at logic “1”, and DQ ...
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... DQ 6 Toggle Bit I The MBM29F200TC/BC also feature the “Toggle Bit I” method to indicate to the host system that the Embedded Algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the device will result in DQ toggling between one and zero ...
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... MBM29F200TC condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA). The OE and WE pins will control the output disable functions as described in Tables 2 and 3. The DQ failure condition may also appear if a user tries to program a non blank location without erasing. In this 5 case the device locks out and never complete the Embedded Algorithm operation ...
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... When the RY/BY pin is low, the device will not accept any additional program or erase commands. If the MBM29F200TC/BC is placed in an Erase Suspend mode, the RY/BY output will be high. Also, since this is an open drain output, many RY/BY pins can be tied together in parallel with a pull up resistor to V During programming, the RY/BY pin is driven low after the rising edge of the fourth write pulse ...
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... MBM29F200TC Write Pulse “Glitch” Protection Noise pulses of less than 5 ns (typical) on OE, CE will not initiate a write cycle. Logical Inhibit Writing is inhibited by holding any one must be a logical zero while logical one. Power-Up Write Inhibit Power-up of the device with The internal state machine is automatically reset to the read mode on power-up ...
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... Supply Voltages CC MBM29F200TC/BC-55..............................................................................+4. +5.25 V MBM29F200TC/BC-70/-90 .......................................................................+4. +5.50 V Operating ranges define those limits between which the functionality of the devices are guaranteed. WARNING: The recommended operating conditions are required in order to ensure the normal operating ranges for the semiconductor device. All of the device’s electrical characteristics are warranted whent the device is operated within these ranges ...
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... MBM29F200TC MAXIMUM OVERSHOOT +0.8 V –0.5 V –2.0 V Figure +2.0 V Figure 2 +14.0 V +13 +0 Note: This waveform is applied for A Figure 3 /MBM29F200BC -55/-70/- Maximum Negative Overshoot Waveform Maximum Positive Overshoot Waveform OE, and RESET. 9 Maximum Positive Overshoot Waveform ...
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... MBM29F200TC DC CHARACTERISTICS Parameter Parameter Description Symbol I Input Leakage Current LI I Output Leakage Current OE, RESET Inputs Leakage 9 I LIT Current I V Active Current (Note 1) CC1 Active Current (Note 2) CC2 Current (Standby) CC3 Current (Standby, Reset) CC4 CC V Input Low Level ...
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... MBM29F200TC AC CHARACTERISTICS • Read Only Operations Characteristics Parameter Symbols Description JEDEC Standard t t Read Cycle Time AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV Output Enable to Output Delay GLQV Chip Enable to Output High-Z EHQZ ...
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... Read Min. Toggle and Data Polling Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Typ. Typ. Max. Min. Min. ID Min. Min. Min. Min. Min. -55/-70/-90 MBM29F200TC/BC Unit -55 -70 - ...
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... Delay Time from Embedded Output Enable Max. EOE Notes: 1. This does not include the preprogramming time. 2. These timing is for Sector Protection operation. /MBM29F200BC -55/-70/-90 Description -55 Min. 500 Min. 50 Max. 30 Min. 30 Max -55/-70/-90 MBM29F200TC/BC Unit -70 -90 500 500 ...
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... MBM29F200TC SWITCHING WAVEFORMS • Key to Switching Waveforms Addresses High-Z Outputs Figure 5.1 28 /MBM29F200BC -55/-70/-90 WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from from May Will Be Change Changing from from “H” or “L” Changing ...
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... MBM29F200TC Addresses t RH RESET HIGH-Z Outputs Figure 5.2 AC Waveforms for Hardware Reset/Read Operations /MBM29F200BC -55/-70/- Addresses Stable t ACC Output Valid -55/-70/- ...
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... MBM29F200TC 3rd Bus Cycle Addresses 555H GHWL WE A0H Data t DS Notes address of the memory location to be programmed data to be programmed at byte address the output of the complement of the data written to the device the output of the data written to the device. ...
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... MBM29F200TC 3rd Bus Cycle Addresses 555H GHEL Data A0H Notes address of the memory location to be programmed data to be programmed at byte address the output of the complement of the data written to the device the output of the data written to the device. ...
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... MBM29F200TC Addresses GHWL WE Data t VCS V CC Notes the sector address for Sector Erase. Addresses = 555H (Word), AAAH (Byte) for Chip Erase. 2. These waveforms are for the Figure 8 32 /MBM29F200BC -55/-70/-90 2AAH 555H 555H 555H ...
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... MBM29F200TC OEH WE DQ Data 7 Data *DQ = Valid Data (The device has completed the Embedded operation). 7 Figure 9 AC Waveforms for Data Polling during Embedded Algorithm Operations CE t OEH WE t OES OE Data Toggle *DQ stops toggling (The device has completed the Embedded operation). ...
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... MBM29F200TC CE WE RY/BY Figure 11 RY/BY Timing Diagram during Program/Erase Operations WE RESET RY/BY CE BYTE ELFH Figure 12 34 /MBM29F200BC -55/-70/-90 The rising edge of the last WE signal READY Figure 12 RESET/RY/BY Timing Diagram Data Output Data Output ( ( FHQV A -1 Timing Diagram for Word Mode Configuration ...
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... MBM29F200TC CE BYTE t ELFL Figure 13 Timing Diagram for Byte Mode Configuration BYTE Figure 14 BYTE Timing Diagram for Write Operations /MBM29F200BC -55/-70/-90 Data Output Data Output ( ( FLQZ The falling edge of the last write pulse ...
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... MBM29F200TC SAX VLHT VLHT WE CE Data t VLHT V CC SAX = Sector Address for initial sector SAY = Sector Address for next sector Note byte mode Figure 15 ...
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... MBM29F200TC VCS RESET RY/BY Figure 16 Enter Erase Embedded Suspend Erasing WE Erase Erase Suspend Read Toggle DQ and with OE Note read from the erase-suspended sector. 2 /MBM29F200BC -55/-70/-90 t VIDR Program or Erase Command Sequence VCS Temporary Sector Unprotection Enter Erase ...
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... MBM29F200TC EMBEDDED ALGORITHMS Increment Address * : The sequence is applied for The addresses differ from Figure 17 38 /MBM29F200BC -55/-70/-90 Start Write Program Command Sequence (See Below) Data Polling Device No Last Address ? Yes Programming Completed Program Command Sequence* (Address/Command): 555H/AAH 2AAH/55H 555H/A0H Program Address/Program Data 16 mode ...
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... MBM29F200TC EMBEDDED ALGORITHMS Chip Erase Command Sequence* (Address/Command): 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H 555H/10H * : The sequence is applied for The addresses differ from 8 mode. Figure 18 /MBM29F200BC -55/-70/-90 Start Write Erase Command Sequence (See Below) Data Polling or Toggle Bit Successfully Completed Erasure Completed Individual Sector/Multiple Sector* ...
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... MBM29F200TC Note rechecked even /MBM29F200BC -55/-70/-90 Start Read Byte ( Addr Yes DQ = Data Yes Read Byte ( Addr Yes DQ = Data Pass Fail = “1” because DQ may change simultaneously with Figure 19 Data Polling Algorithm ...
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... MBM29F200TC No Note rechecked even changing to “1”. 5 Figure 20 /MBM29F200BC -55/-70/-90 Start Read Byte ( Addr. = “H” or “L” Toggle 6 ? Yes Yes Read Byte ( Addr. = “H” or “L” Toggle 6 ? Yes Fail Pass = “ ...
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... MBM29F200TC Increment PLSCNT PLSCNT = 25? Remove V Write Reset Command Device Failed * : byte mode /MBM29F200BC -55/-70/-90 Start Setup Sector Addr 16 PLSCNT = RESET = Activate WE Pulse Time out 100 ...
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... MBM29F200TC Notes: 1. All protected sectors unprotected. 2. All previously protected sectors are protected once again. Figure 22 Temporary Sector Unprotection Algorithm /MBM29F200BC -55/-70/-90 Start RESET = V ID (Note 1) Perform Erase or Program Operations RESET = V IH Temporary Sector Unprotection Completed (Note 2) -55/-70/-90 43 ...
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... MBM29F200TC ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Word Programming Time Byte Programming Time Chip Programming Time Erase/Program Cycle TSOP (I) PIN CAPACITANCE Parameter Parameter Description Symbol C Input Capacitance IN C Output Capacitance OUT C Control Pin Capacitance IN2 Note: Test conditions T = 25° 1.0 MHz ...
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... MBM29F200TC PACKAGE DIMENSIONS 48-pin plastic TSOP (I) (FPT-48P-M19) LEAD No. 1 INDEX 24 20.00±0.20 (.787±.008) * 18.40±0.20 (.724±.008) 0.10(.004) 19.00±0.20 (.748±.008) 1996 FUJITSU LIMITED F48029S-2C-2 C /MBM29F200BC -55/-70/-90 *: Resin protrusion. (Each side: 0.15(.006) Max) 48 Details of "A" part "A" 0.15(.006) ...
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... MBM29F200TC (Continued) 48-pin plastic TSOP (I) (FPT-48P-M20) LEAD No. 1 INDEX 24 19.00±0.20 (.748±.008) 0.10(.004) * 18.40±0.20 (.724±.008) 20.00±0.20 (.787±.008) 1996 FUJITSU LIMITED F48030S-2C /MBM29F200BC -55/-70/-90 *: Resin protrusion. (Each side: 0.15(.006) Max) 48 Details of "A" part "A" 25 0.50±0.10 (.020± ...
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... MBM29F200TC (Continued) 44-pin plastic SOP (FPT-44P-M16) +0.25 28.45 –0.20 44 INDEX LEAD No. 1 1.27(.050)TYP 0.10(.004) 26.67(1.050)REF 1998 FUJITSU LIMITED F44023S-4C-4 C /MBM29F200BC -55/-70/-90 +.010 1.120 –.008 23 13.00±0.10 16.00±0.20 (.512±.004) (.630±.008) 22 +0.10 +0.10 0.40 0.20 .008 –0.05 –0.15 Ø0.13(.005) M +.004 (Stand off) .016 –.002 -55/-70/-90 2.35± ...
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... MBM29F200TC FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices KAWASAKI PLANT, 4-1-1, Kamikodanaka Nakahara-ku, Kawasaki-shi Kanagawa 211-8588, Japan Tel: 81(44) 754-3763 Fax: 81(44) 754-3329 http://www.fujitsu.co.jp/ North and South America FUJITSU MICROELECTRONICS, INC. Semiconductor Division ...