MBM29F160TE-70PFTN Fujitsu, MBM29F160TE-70PFTN Datasheet
MBM29F160TE-70PFTN
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MBM29F160TE-70PFTN Summary of contents
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... MBM29F160TE/BE GENERAL DESCRIPTION The MBM29F160TE/ 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be programmed in-system with the standard system 5 operations. The device can also be reprogrammed in standard EPROM programmers. ...
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... The MBM29F160TE/BE also has a hardware RESET pin. When this pin is driven low, execution of any Embedded Program Algorithm or Embedded Erase Algorithm is terminated. The internal state machine is then reset to the read mode. The RESET pin may be tied to the system reset circuitry. Therefore system reset occurs during the Embedded Program Algorithm or Embedded Erase Algorithm, the device is automatically reset to the read mode and will have erroneous data stored in the address locations being programmed or erased ...
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... Temporary sector unprotection via the RESET pin • In accordance with CFI (Common Flash Memory Interface) • WP Input pin (Hardware Protect allows protection of boot sectors, regardless of sector protection/unprotection status allows removal of boot sector protection IH At open, allows removal of boot sector protection (MBM29F160TE/BE) /MBM29F160BE -55/-70/-90 2 PROMs -55/-70/-90 3 ...
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... MBM29F160TE -55/-70/-90 PIN ASSIGNMENT N.C. WE RESET N.C. N.C. RY/ RY/BY N.C. N.C. RESET WE N. ...
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... MBM29F160TE BLOCK DIAGRAM V CC RY/BY Buffer State BYTE Control RESET WP Command Register CE OE Low V Detector /MBM29F160BE -55/-70/-90 RY/BY Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer for Address Program/Erase Latch X-Decoder -55/-70/- ...
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... Kbytes or 32 Kwords SA30 64 Kbytes or 32 Kwords SA31 32 Kbytes or 16 Kwords SA32 8 Kbytes or 4 Kwords SA33 8 Kbytes or 4 Kwords SA34 16 Kbytes or 8 Kwords MBM29F160TE Top Boot Sector Architecture 6 /MBM29F160BE -55/-70/- Address Range ( 16) Address Range 00000H to 0FFFFH 00000H to 07FFFH 10000H to 1FFFFH 08000H to 0FFFFH 20000H to 2FFFFH ...
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... MBM29F160TE Sector Sector Size SA0 16 Kbytes or 8 Kwords SA1 8 Kbytes or 4 Kwords SA2 8 Kbytes or 4 Kwords SA3 32 Kbytes or 16 Kwords SA4 64 Kbytes or 32 Kwords SA5 64 Kbytes or 32 Kwords SA6 64 Kbytes or 32 Kwords SA7 64 Kbytes or 32 Kwords SA8 64 Kbytes or 32 Kwords SA9 ...
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... MBM29F160TE -55/-70/-90 LOGIC SYMBOLL RY/BY WE RESET BYTE 8 /MBM29F160BE Table 1 MBM29LV160TE/BE Pin Configuration Pin Address Inputs - Data Inputs/Outputs Chip Enable OE Output Enable WE Write Enable RY/BY Ready/Busy Output Hardware Reset Pin/ ...
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... Output Disable Write (Program/Erase) Enable Sector Protection (2), (4) Verify Sector Protection (2), (4) Temporary Sector Unprotection Reset (Hardware)/Standby Boot Block Write Protection Table 3 MBM29F160TE/BE User Bus Operation (BYTE = V Operation Auto-Select Manufacture Code (1) Auto-Select Device Code (1) Read (3) Standby Output Disable Write (Program/Erase) ...
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... FUNCTIONAL DESCRIPTION Read Mode The MBM29F160TE/BE has two control functions which must be satisfied in order to obtain data at the outputs the power control and should be used for a device selection the output control and should be used to gate data to the output pins if a device is selected. ...
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... MBM29F160TE Table 4.1 MBM29F160TE/BE Sector Protection Verify Autoselect Code Type Manufacture’s Code MBM29F160TE Word Device Code MBM29F160BE Word Sector Protection * for Byte mode. -1 *2: Outputs 01H at protected sector addresses and outputs 00H at unprotected sector addresses. Table 4.2 Expanded Autoselect Code Table ...
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... SA30 SA31 SA32 SA33 SA34 /MBM29F160BE Sector Address Tables (MBM29F160TE Address Range 00000H to 0FFFFH 10000H to 1FFFFH 20000H to 2FFFFH 30000H to 3FFFFH ...
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... MBM29F160TE Table 6 Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 ...
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... Unprotection". Sector Protection The MBM29F160TE/BE features hardware sector protection. This feature will disable both program and erase operations in any number of sectors (0 through 34). The sector protection feature is enabled using programming equipment at the user’s site. The device is shipped with all sectors unprotected. ...
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... MBM29F160TE Table 7 MBM29F160TE/BE Standard Command Definitions Command First Bus Bus Sequence Write Cycle Write Cycles Req'd (Notes Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data Word Read/Reset 1 XXXH F0H /Byte (Note 6) Word 555H Read/Reset 3 (Note 6) ...
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... The operation is initiated by writing the Autoselect command sequence into the command register. Following the last command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A read cycle from address XX01H for 16 (XX02H for 8) retrieves the device code (MBM29F160TE = D2H and 16 ...
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... MBM29F160TE MBM29F160BE = D8H for 8 mode; MBM29F160TE = 22D2H and MBM29F160BE = 22D8H for 16 mode). (See Tables 4.1 and 4.2.) All manufactures and device codes will exhibit odd parity with DQ The sector state (protection or unprotection) will be indicated by address XX02H for 16 (XX04H for 8). Scanning the sector addresses (A a logical “ ...
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... MBM29F160TE -55/-70/-90 = 30H) is latched on the rising edge of WE. After a time-out from the rising edge of the last sector erase command, the sector erase operation will begin. Multiple sectors may be erased concurrently by writing six-bus cycle operations on Table 7. This sequence is followed with writes of the Sector Erase command to addresses in other sectors desired to be concurrently erased ...
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... Extended Command (1) Fast Mode MBM29F160TE/BE has Fast Mode function. This mode dispenses with the initial two unlock cycles required in the standard program command sequence writing Fast Mode command into the command register. In this mode, the required bus cycle for programming is two cycles instead of four bus cycles in standard program command ...
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... DQ 6 Toggle Bit I The MBM29F160TE/BE also feature the “Toggle Bit I” method to indicate to the host system that the Embedded Algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the device will result in DQ toggling between one and zero ...
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... MBM29F160TE condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA). The OE and WE pins will control the output disable functions as described in Tables 2 and 3. The DQ failure condition may also appear if a user tries to program a non blank location without erasing. In this 5 case the device locks out and never completes the Embedded Algorithm operation ...
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... RY/BY Ready/Busy Pin The MBM29F160TE/BE provides a RY/BY open-drain output pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or has been completed. If the output is low, the device is busy with either a program or erase operation. If the output is high, the device is ready to accept any read/write or erase operation ...
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... MBM29F160TE If the Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector(s) will need to be erased again prior to programming. Write Pulse “Glitch” Protection Noise pulses of less than 5 ns (typical) on OE, CE will not change the command registers. Logical Inhibit Writing is inhibited by holding any one logical zero while logical one ...
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... ACC 00h = Not Supported 0000h D7-4: volt, D3-0: 100 mvolt 0004h V Max.(Acceleration) Supply ACC 00h = Not Supported D7-4: volt, D3-0: 100 mvolt 0000h 0000h Boot Type 0040h 02h = MBM29F160BE 0000h 03h = MBM29F160TE -55/-70/- 31h 0001h 32h 0000h 33h 0020h 34h ...
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... MBM29F160TE ABSOLUTE MAXIMUM RATINGS Parameter Storage Temperature Ambient Temperature with Power Applied Voltage with Respect to Ground All pins except A , OE, RESET (Note OE, and RESET 9 (Note 2) Power Supply Voltage (Note 1) Notes: 1. Minimum DC voltage on input or l/O pins are –0.5 V. During voltage transitions, inputs may negative overshoot V to – ...
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... MBM29F160TE -55/-70/-90 MAXIMUM OVERSHOOT +0.8 V -0.5 V -2.0 V Figure 1 Maximum Negative Overshoot Waveform +2.0 V Figure 2 Maximum Positive Overshoot Waveform 1 +14.0 V +13 0 Note : This waveform is applied for A Figure 3 Maximum Positive Overshoot Waveform 2 26 /MBM29F160BE OE, and RESET ...
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... MBM29F160TE DC CHARACTERISTICS Parameter Parameter Description Symbol I Input Leakage Current LI I Output Leakage Current OE, RESET Inputs Leakage 9 I LIT Current I V Active Current (Note 1) CC1 Active Current (Note 2) CC2 Current (Standby) CC3 Current (Standby, RESET) CC4 CC V Input Low Level ...
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... Input rise and fall times Input pulse levels 3.0 V Timing measurement reference level Input: 1.5 V Output: 1.5 V Device Under Test Notes : including jig capacitance (MBM29F160TE/BE-55/-70 100 pF including jig capacitance (MBM29F160TE/BE-55/-70 /MBM29F160BE Test Setup — Min Max Max ...
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... Read Min. Toggle and Data Polling Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Byte Typ. Word Typ. Max. Min. Min. Min. Min. Min. Min. -55/-70/-90 MBM29F160TE/BE Unit -55 -70 - ...
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... Rise Time to V VIDR — t RESET Pulse Width RP Notes: 1. This does not include the preprogramming time. 2. This timing is for Sector Protection operation. 30 /MBM29F160BE Description Min. Max. Max. Min. (Note 2) Min. ID Min. -55/-70/-90 MBM29F160TE/BE Unit -55 -70 - ...
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... MBM29F160TE SWITCHING WAVEFORMS • Key to Switching Waveforms WAVEFORM Addresses OEH WE HIGH-Z Outputs Figure 5.1 AC Waveforms Read Operations /MBM29F160BE -55/-70/-90 INPUTS OUTPUTS Will Be Must Be Steady Steady Will Be May Change Change from from May Will Be Change Change from from “H” or “L”; ...
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... MBM29F160TE -55/-70/-90 Addresses RESET High-Z Outputs Figure 5.2 AC Waveforms for Hardware Reset/Read Operations 32 /MBM29F160BE t RC Addresses Stable t ACC Output Valid -55/-70/- ...
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... MBM29F160TE -55/-70/-90 3rd Bus Cycle 555H PA Addresses WPH t GHWL A0H Data Notes address of the memory location to be programmed data to be programmed at word address the output of the complement of the data written to the device. ...
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... MBM29F160TE -55/-70/-90 Addresses GHEL CE Data Notes address of the memory location to be programmed data to be programmed at word address the output of the complement of the data written to the device the output of the data written to the device. OUT 5. Figure indicates last two bus cycles out of four bus cycle sequence. ...
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... MBM29F160TE -55/-70/-90 Addresses 555H WPH t GHWL AAH Data t VCS the sector address for Sector Erase. Addresses = 555H (Word), AAAH (Byte) for Chip Erase. 2. These waveforms are for the 16 mode. (The addresses differ from 8 mode.) ...
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... MBM29F160TE -55/-70/- Data Data BUSY RY/ Valid Data (The device has completed the Embedded operation). 7 Figure 9 AC Waveforms for Data Polling during Embedded Algorithm Operations OES OE Data ( Stops toggling. (The device has completed the Embedded operation.) ...
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... MBM29F160TE -55/-70/- RY/BY Figure 11 RY/BY Timing Diagram during Program/Erase Operations WE RESET RY/BY Figure 12 RESET, RY/BY Timing Diagram /MBM29F160BE The rising edge of the last WE signal Entlre programming or erase operations t BUSY READY -55/-70/-90 37 ...
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... MBM29F160TE -55/-70/- BYTE ELFH Figure 13 Timing Diagram for Word Mode Configuration CE OE BYTE t ELFL Figure 14 Timing Diagram for Byte Mode Configuration 38 /MBM29F160BE FHQV ...
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... MBM29F160TE -55/-70/- BYTE Figure 15 BYTE Timing Diagram for Write Operations /MBM29F160BE The falling edge of the last write signal Input Valid t SET ( HOLD AH -55/-70/-90 39 ...
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... MBM29F160TE -55/-70/- SAX VLHT VLHT WE CE Data t VCS V CC SAX : Sector Address for initial sector SAY : Sector Address for next sector Note byte mode. ...
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... MBM29F160TE VIDR t VCS RESET VLHT RY/BY Figure 17 Temporary Sector Unprotection Timing Diagram Enter Erase Embedded Suspend Erasing WE Erase Erase Suspend Toggle DQ and With OE Note read from the erase-suspended sector. 2 /MBM29F160BE -55/-70/-90 Program or Erase Command Sequence ...
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... MBM29F160TE -55/-70/-90 FLOW CHART Increment Address * : The sequence is applied for 16 mode. The addresses differ from 8 mode. Figure 19 Embedded Program 42 /MBM29F160BE Start Write Program Command Sequence (See Below) Data Polling Davice No Verify Byte ? Yes No Last Address ? Yes Programming Completed Program Command Sequence* (Address/Command) : ...
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... MBM29F160TE -55/-70/-90 Write Erase Command Data Polling or Toggle Bit No Erasure Completed Chip Erase Command Sequence* (Address/Command) : 555H/AAH 2AAH/55H 555H/80H 555H/AAH 2AAH/55H 555H/10H * : The sequence is applied for 16 mode. The addresses differ from 8 mode. Figure 20 Embedded Erase /MBM29F160BE Start Sequence (See Below) from Device ...
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... MBM29F160TE -55/-70/- rechecked even /MBM29F160BE VA =Address for programming Start Read Byte ( Addr Yes DQ = Data ? Yes Read Byte ( Addr Yes DQ = Data ? Fail Pass = “1” because DQ may change simultaneously with Figure 21 Data Polling Algorithm ...
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... MBM29F160TE -55/-70/- rechecked even “1” because changing to “1”. 5 Figure 22 Toggle Bit Algorithm /MBM29F160BE Start Read ( Addr. = “H” or “L” Toggle 6 ? Yes Yes Read Byte ( Addr. = “H” or “L” ...
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... MBM29F160TE -55/-70/-90 Increment PLSCNT PLSCNT = 25 ? Pemove V Write Reset Command Device Failed * : byte mode Figure 23 Sector Protection Algorithm 46 /MBM29F160BE Start Setup Sector Addr PLSCNT = RESET = ...
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... MBM29F160TE -55/-70/-90 Notes: 1. All protected sectors are unprotected. 2. All previously protected sectors are protected once again. Figure 24 Temporary Sector Unprotection Algorithm /MBM29F160BE Start RESET = V ID (Note 1) Perform Erase or Program Operations RESET = V IH Temporary Sector Unprotection Completed (Note 2) -55/-70/-90 47 ...
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... MBM29F160TE -55/-70/-90 Increment Address * : The sequence is applied for 16 mode The addresses differ from 8 mode. Figure 25 Embedded Programming Algorithm for Fast Mode 48 /MBM29F160BE Start 555H/AAH 2AAH/55H 555H/20H XXXXH/A0H Program Address/Program Data Data Polling Device No Verify Byte ? Yes No Last Address ? Yes Programming Completed XXXXH/90H ...
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... MBM29F160TE ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Byte Programming Time Word Programming Time Chip Programming Time Erase/Program Cycle TSOP (I) PIN CAPACITANCE Parameter Parameter Description Symbol C Input Capacitance IN C Output Capacitance OUT C Control Pin Capacitance IN2 Note: Test conditions T = 25° 1.0 MHz ...
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... MBM29F160TE -55/-70/-90 ORDERING INFORMATION Standard Products Fujitsu standard products are available in several packages. The order number is formed by a combination of: MBM29F160 T E -55 DEVICE NUMBER/DESCRIPTION MBM2F160 16 Mega-bit (2M 5.0 V-only Read, Write, and Erase 50 /MBM29F160BE PFTN PACKAGE TYPE TN = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout ...
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... MBM29F160TE PACKAGE DIMENSIONS 48-pin plastic TSOP (I) (FPT-48P-M19) LEAD No. 1 INDEX 24 20.00±0.20 (.787±.008) * 18.40±0.20 (.724±.008) 0.10(.004) 19.00±0.20 (.748±.008) 1996 FUJITSU LIMITED F48029S-2C-2 C /MBM29F160BE -55/-70/-90 *: Resin protruction. (Each side: 0.15(.006) Max) 48 Details of "A" part "A" 0.15(.006) ...
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... MBM29F160TE -55/-70/-90 48-pin plastic TSOP (I) (FPT-48P-M20) LEAD No. 1 INDEX 24 19.00±0.20 (.748±.008) 0.10(.004) * 18.40±0.20 (.724±.008) 20.00±0.20 (.787±.008) 1996 FUJITSU LIMITED F48030S-2C /MBM29F160BE -55/-70/-90 *: Resin protrusion. (Each side: 0.15(.006) Max) 48 Details of "A" part "A" 0.15(.006) 0.25(.010) 25 0.50± ...
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... MBM29F160TE -55/-70/-90 FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices KAWASAKI PLANT, 4-1-1, Kamikodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa 211-8588, Japan Tel: +81-44-754-3763 Fax: +81-44-754-3329 http://www.fujitsu.co.jp/ North and South America FUJITSU MICROELECTRONICS, INC. 3545 North First Street, ...