MBM29LV800BA-90PFTN Fujitsu, MBM29LV800BA-90PFTN Datasheet

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MBM29LV800BA-90PFTN

Manufacturer Part Number
MBM29LV800BA-90PFTN
Description
CMOS 8M (1M x 8/512K x 16) Bit FLASH MEMORY
Manufacturer
Fujitsu
Datasheet

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FUJITSU SEMICONDUCTOR
FLASH MEMORY
CMOS
8M (1M
MBM29LV800TA
Ordering Part No.
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
DESCRIPTION
The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K
words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(1), 44-pin SOP , and 48-ball FBGA
packages. These devices are designed to be programmed in-system with the standard system 3.0 V V
12.0 V V
in standard EPROM programmers.
The standard MBM29LV800TA/BA offer access times 70 ns and 90 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE),
write enable (WE), and output enable (OE) controls.
The MBM29LV800TA/BA are pin and command set compatible with JEDEC standard E
written to the command register using standard microprocessor write timings. Register contents serve as input
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase operations. Reading data out of the devices is similar
to reading from 5.0 V and 12.0 V Flash or EPROM devices.
The MBM29LV800TA/BA are programmed by executing the program command sequence. This will invoke the
Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths
and verifies proper cell margin. Typically, each sector can be programmed and verified in about 0.5 seconds.
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed
before executing the erase operation. During erase, the devices automatically time the erase pulse widths and
verify proper cell margin.
PRODUCT LINE UP
DATA SHEET
PP
and 5.0 V V
Part No.
CC
are not required for write or erase operations. The devices can also be reprogrammed
V
V
CC
CC
= 3.3 V
= 3.0 V
8/512K
-70/-90
+0.3 V
–0.3 V
+0.6 V
–0.3 V
/MBM29LV800BA
MBM29LV800TA/MBM29LV800BA
-70
70
70
30
16) BIT
2
PROMs. Commands are
-70/-90
DS05-20845-6E
-90
90
90
35
(Continued)
CC
supply.

Related parts for MBM29LV800BA-90PFTN

MBM29LV800BA-90PFTN Summary of contents

Page 1

... During erase, the devices automatically time the erase pulse widths and verify proper cell margin. PRODUCT LINE UP Part No Ordering Part No Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) 8/512K /MBM29LV800BA -70/-90 MBM29LV800TA/MBM29LV800BA +0 3.3 V -70 –0 3.0 V — –0 DS05-20845-6E 16) BIT -70/-90 supply ...

Page 2

... EPROM programming mechanism of hot electron injection. PACKAGES 48-pin Plastic TSOP (1) Marking Side (FPT-48P-M19) 48-pin Plastic FBGA (BGA-48P-M12) 2 /MBM29LV800BA -70/- the RY/BY output pin. Once the end of a program or erase cycle has been 6 2 PROM experience to produce the highest levels 48-pin Plastic TSOP (1) Marking Side ...

Page 3

... Hardware method disables any combination of sectors from program or erase operations • Sector Protection Set Function by Extended Sector Protect Command • Fast Programming Function by Extended Command • Temporary Sector Unprotection Temporary sector unprotection via the RESET pin *: Embedded Erase TM and Embedded Program /MBM29LV800BA -70/-90 2 PROMs TM are trademarks of Advanced Micro Devices, Inc. -70/-90 3 ...

Page 4

... N.C. 14 N.C. MBM29LV800TA/MBM29LV800BA 13 RESET Reverse Bend N. (FPT-48P-M20) 4 /MBM29LV800BA -70/-90 TSOP( BYTE ...

Page 5

... RY/ RESET N /MBM29LV800BA -70/-90 (TOP VIEW) Marking side ...

Page 6

... Pin name Address Inputs - Data Inputs/Outputs Chip Enable OE Output Enable WE Write Enable RY/BY Ready/Busy Output RESET Hardware Reset Pin/Temporary Sector Unprotection BYTE Selects 8-bit or 16-bit mode V Device Ground SS V Device Power Supply CC N.C. No Internal Connection 6 /MBM29LV800BA -70/-90 Function -70/-90 ...

Page 7

... Register CE OE Low V Detector LOGIC SYMBOL RESET BYTE /MBM29LV800BA -70/-90 RY/BY Erase Voltage Generator Program Voltage Chip Enable Generator Output Enable Logic Y-Decoder STB Timer for Address Program/Erase Latch X-Decoder ...

Page 8

... Manufacturer and device codes may also be accessed via a command register write sequence. See “MBM29LV800TA/BA Standard Command Definitions Table”. *2: Refer to “7. Sector Protection” in “ FUNCTIONAL DESCRIPTIONS”. *3: WE can * 3.3 V ± 10 also used for the extended sector protection. 8 /MBM29LV800BA -70/- ...

Page 9

... Manufacturer’s Code 04h (B)* DAh A MBM29LV800TA (W) 22DAh Device Code (B)* 5Bh A MBM29LV800B A (W) 225Bh Sector Protection 01h * : At Byte mode are High-Z and (B): Byte mode (W): Word mode HI-Z: High-Z /MBM29LV800BA -70/- ...

Page 10

... Byte Mode: AAAh or 555h to addresses A Both Read/Reset commands are functionally equivalent, resetting the device to the read mode. Command combinations not described in “MBM29LV800TA/800BA Standard Command Definitions Table” and “MBM29LV800TA/BA Extended Command Definitions Table” are illegal. 10 /MBM29LV800BA -70/-90 Fourth Bus Second Bus Third Bus ...

Page 11

... SD : Sector protection verify data. Output 01h at protected sector addresses and output 00h at unprotected sector addresses. *1: This command is valid while Fast Mode. *2: This command is valid while RESET=V *3: This data “00h” is also acceptable /MBM29LV800BA -70/-90 First Bus Second Bus Write Cycle Write Cycle ...

Page 12

... MBM29LV800BA Sector Architecture -70/- 16) FFFFFh 7FFFFh EFFFFh 77FFFh DFFFFh 6FFFFh CFFFFh 67FFFh BFFFFh 5FFFFh AFFFFh 57FFFh 9FFFFh 4FFFFh 8FFFFh ...

Page 13

... SA13 SA14 SA15 SA16 SA17 SA18 /MBM29LV800BA -70/- Address Range ( 00000h to 0FFFFh 10000h to 1FFFFh 20000h to 2FFFFh 30000h to 3FFFFh 40000h to 4FFFFh ...

Page 14

... SA13 SA14 SA15 SA16 SA17 SA18 /MBM29LV800BA -70/-90 Sector Address Table (MBM29LV800BA Address Range ( 00000h to 03FFFh 04000h to 05FFFh 06000h to 07FFFh 08000h to 0FFFFh ...

Page 15

... MBM29LV800TA/BA are erased or programmed in a system without access to high voltage on the A command sequence is illustrated in “MBM29LV800TA/BA Standard Command Definitions Table” (“ DEVICE BUS OPERATION”). (Refer to “2. Autoselect Command” in “ COMMAND DEFINITIONS”.) /MBM29LV800BA -70/-90 -t time.) When reading out a data without changing addresses after ...

Page 16

... IL code (MBM29LV800TA = DAh and MBM29LV800BA = 5Bh for 8 mode; MBM29LV800TA = 22DAh and MBM29LV800BA = 225Bh for 16 mode). These two bytes/words are given in “MBM29LV800TA/800BA Sector Protection Verify Autoselect Codes Table” and “Extended Autoselect Code Table” (“ DEVICE BUS OPERATION” ...

Page 17

... Diagram” in “ SWITCHING WAVEFORMS” for the timing diagram. Refer to “8. Temporary Sector Unprotection” for additional functionality. If hardware reset occurs during Embedded Erase Algorithm, there is a possibility that the erasing sector(s) cannot be used. /MBM29LV800BA -70/-90 ) for at least 500 ns in order to properly reset the internal state machine. IL -70/-90 ...

Page 18

... Following the command write, a read cycle from address XX00h retrieves the manufacture code of 04h. A read cycle from address XX01h for 16(XX02h for 8) returns the device code (MBM29LV800TA = DAh and MBM29LV800BA = 5Bh for 8 mode; MBM29LV800TA = 22DAh and MBM29LV800BA = 225Bh for 16 mode). (See “MBM29LV800TA/800BA Sector Protection Verify Autoselect Codes Table” and “Extended Autoselect Code Table” ...

Page 19

... The interrupts can be re-enabled after the last Sector Erase command is written. A time-out from the rising edge of the last WE will initiate the execution of the Sector Erase command(s). If another falling edge of the WE occurs /MBM29LV800BA -70/-90 is equivalent to data written to this ...

Page 20

... To resume the operation of Sector Erase, the Resume command (30h) should be written. Any further writes of the Resume command at this point will be ignored. Another Erase Suspend command can be written after the chip has resumed erasing. 20 /MBM29LV800BA -70/-90 to determine if the sector erase timer window 3 is “1” (See “8. Write Operation Status”.) at 7 will stop toggling ...

Page 21

... Erase Suspend Program Suspended Mode (Non-Erase Suspended Sector) *1: Successive reads from the erasing or erase-suspend sector cause DQ *2: Reading from non-erase suspend sector address indicates logic “1” at the DQ /MBM29LV800BA -70/-90 during Fast Mode. on RESET pin and write a commnad sequence. ID and control timing for control pins. The only RESET ...

Page 22

... Data Polling is the only operating function of the devices under this condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA). 22 /MBM29LV800BA -70/-90 . Upon completion of the Embedded Program 7 ) may change asynchronously while the output ...

Page 23

... DQ again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If /MBM29LV800BA -70/-90 V )” in “ DEVICE BUS OPERATION”. ...

Page 24

... During power up the devices automatically reset the internal state machine in the Read mode. Also, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific multi-bus cycle command sequences. 24 /MBM29LV800BA -70/-90 Toggle Bit Status Table DQ ...

Page 25

... Device user is able to protect each sector individually to store and protect data. Protection circuit voids both write and erase commands that are addressed to protected sectors. Any commands to write or erase addressed to protected sector are ignore (see “7. Sector Protection” in “ FUNCTIONAL DESCRIPTION”) . /MBM29LV800BA -70/-90 power-up and power-down, a write cycle is locked out for V CC ...

Page 26

... No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. 26 /MBM29LV800BA -70/-90 Symbol T T ...

Page 27

... MAXIMUM OVERSHOOT /MAXIMUM UNDERSHOOT +0.6 V –0.5 V –2.0 V Figure +2.0 V Figure 2 +14.0 V +13 +0 Note: This waveform is applied for A Figure 3 /MBM29LV800BA -70/- Maximum Undershoot Waveform Maximum Overshoot Waveform OE, and RESET. 9 Maximum Overshoot Waveform 2 -70/-90 27 ...

Page 28

... Embedded Algorithm (program or erase progress. CC *3: Automatic sleep mode enables the low power mode when address remain stable for 150 ns. *4: This timing is only for Sector Protection operation and Autoselect mode. *5: (V – not exceed /MBM29LV800BA -70/-90 Symbol Test Conditions ...

Page 29

... Input rise and fall times Input pulse levels: 0 3.0 V Timing measurement reference level Input: 1.5 V Output:1.5 V Device Under Test Notes : including jig capacitance (MBM29LV800TA/BA-70 100 pF including jig capacitance (MBM29LV800TA/BA-90) L /MBM29LV800BA -70/-90 Symbol Test Setup Min JEDEC Standard t t — 70 AVAV ...

Page 30

... RESET Hold Time Before Read BYTE Switching Low to Output High-Z BYTE Switching High to Output Active Program/Erase Valid to RY/BY Delay Delay Time from Embedded Output Enable *1: This does not include the preprogramming time. *2: This timing is for Sector Protection operation. 30 /MBM29LV800BA -70/-90 Symbol Min JEDEC Standard t t ...

Page 31

... SCSP Parameter Input Capacitance C Output Capacitance C Control Pin Capacitance C Notes Test conditions T = 25° 1.0 MHz pin capacitance is stipulated by output capacitance /MBM29LV800BA -70/-90 Limit Min Typ Max — — 16 360 — 8 300 — 8.4 25 — — ...

Page 32

... MBM29LV800TA SWITCHING WAVEFORMS • Key to Switching Waveforms 1. AC Waveforms for Read Operations Address Outputs 32 /MBM29LV800BA -70/-90 WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from from May Will Be Change Changing from from “H” or “L” ...

Page 33

... D is the output of the data written to the device. OUT Figure indicates last two bus cycles out of four bus cycle sequence. These waveforms are for the 16 mode. (The addresses differ from 8 mode.) /MBM29LV800BA -70/- Address Stable t ACC ...

Page 34

... D is the output of the data written to the device. OUT Figure indicates last two bus cycles out of four bus cycle sequence. These waveforms are for the 16 mode. (The addresses differ from 8 mode.) 34 /MBM29LV800BA -70/-90 3rd Bus Cycle Data Polling PA 555h t WC ...

Page 35

... GHWL WE t Data t VCS the sector address for Sector Erase. Addresses = 555h (Word), AAAh (Byte) : for Chip Erase. Note: These waveforms are for the 16 mode. The addresses differ from 8 mode. /MBM29LV800BA -70/-90 2AAh 555h 555h WPH ...

Page 36

... Valid Data (The device has completed the Embedded operation Waveforms for Toggle Bit I during Embedded Algorithm Operations CE t OEH WE t OES OE DQ Data stops toggling (The device has completed the Embedded operation /MBM29LV800BA -70/- OEH WHWH1 Output Flag 0 6 ...

Page 37

... RY/BY Timing Diagram during Program/Erase Operations CE WE RY/BY 9. RESET/RY/BY Timing Diagram WE RESET RY/BY 10. Timing Diagram for Word Mode Configuration CE BYTE ELFH /MBM29LV800BA -70/-90 Rising edge of the last WE signal Entire programming or erase operations t BUSY READY t CE Data Output Data Output ( ( ...

Page 38

... MBM29LV800TA 11. Timing Diagram for Byte Mode Configuration CE BYTE t ELFL 12. BYTE Timing Diagram for Write Operations BYTE 38 /MBM29LV800BA -70/-90 Data Output ( ACC FLQZ Falling edge of the last write signal Input Valid ...

Page 39

... VLHT VLHT Data t VCS V CC SPAX:Sector Address for initial sector SPAY: Sector Address for next sector Note byte mode /MBM29LV800BA -70/-90 t VLHT t WPP t OESP CSP -70/-90 SPAY t VLHT 01h ...

Page 40

... Erase Embedded Suspend Erasing WE Erase Toggle DQ and with Note /MBM29LV800BA -70/-90 t Program or Erase Command Sequence VLHT Unprotection Period Enter Erase Suspend Program Erase Suspend Erase Erase Suspend Read Suspend Program is read from the erase-suspended sector. -70/-90 t VLHT t VLHT ...

Page 41

... Extended Sector Protection Timing Diagram VCS RESET t VLHT t VIDR Add Data 60h SPAX : Sector Address to be protected SPAY : Next Sector Address to be protected TIME-OUT : Time-Out window = 250 s (Min) /MBM29LV800BA -70/-90 SPAX TIME-OUT 40h 60h -70/-90 SPAX SPAY 60h 01h ...

Page 42

... MBM29LV800TA FLOW CHART 1. Embedded Program TM Algorithm EMBEDDED ALGORITHM Increment Address Notes: The sequence is applied for The addresses differ from 42 /MBM29LV800BA -70/-90 Start Write Program Command Sequence (See Below) Data Polling No Verify Data ? Yes No Last Address ? Yes Programming Completed Program Command Sequence (Address/Command) : ...

Page 43

... Embedded Erase TM Algorithm EMBEDDED ALGORITHM Chip Erase Command Sequence (Address/Command) : 555h/AAh 2AAh/55h 555h/80h 555h/AAh 2AAh/55h 555h/10h Notes: The sequence is applied for The addresses differ from /MBM29LV800BA -70/-90 Start Write Erase Command Sequence (See Below) Data Polling Embedded Erase Algorithm No in Progress Data = FFh ? ...

Page 44

... MBM29LV800TA 3. Data Polling Algorithm *: DQ is rechecked even /MBM29LV800BA -70/-90 Start Read Byte ( Address for programming 7 0 Addr Any of the sector addresses within Yes DQ = Data Any of the sector addresses within Yes Read Byte ( Addr Yes ...

Page 45

... MBM29LV800TA 4. Toggle Bit Algorithm *1: Read toggle bit twice to determine whether it is togglimg. *2: Recheck toggle bit because it may stop toggling as DQ /MBM29LV800BA -70/-90 Start Read ( Addr. = “H” or “L” *1 Read ( Addr. = “H” or “L” Toggle? Yes ...

Page 46

... MBM29LV800TA 5. Sector Protection Algorithm Increment PLSCNT PLSCNT = 25? Remove V Write Reset Command Device Failed *: byte mode /MBM29LV800BA -70/-90 Start Setup Sector Addr PLSCNT = RESET = Activate WE Pulse Time out 100 s ...

Page 47

... MBM29LV800TA 6. Temporary Sector Unprotection Algorithm *1 : All protected sectors are unprotected All previously protected sectors are protected once again. /MBM29LV800BA -70/-90 Start RESET = Perform Erase or Program Operations RESET = V IH Temporary Sector 2 Unprotection Completed* -70/-90 47 ...

Page 48

... FAST MODE ALGORITHM Device is Operating in Temporary Sector Unprotection Mode Increment PLSCNT No PLSCNT = 25? Yes Remove V from RESET ID Write Reset Command Device Failed 48 /MBM29LV800BA -70/-90 Start RESET = V ID Wait Extended Sector Protection Entry? Yes To Setup Sector Protection Write XXXh/60h PLSCNT = 1 To Sector Protection Write SPA/60h (Addr ...

Page 49

... MBM29LV800TA 8. Embedded Program TM Algorithm for Fast Mode FAST MODE ALGORITHM Increment Address Notes: The sequence is applied for The addresses differ from /MBM29LV800BA -70/-90 Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data Polling No Verify Data? Yes No Last Address ? Yes Programming Completed XXXh/90h XXXh/F0h 16 mode ...

Page 50

... MBM29LV800TA ORDERING INFORMATION Part No. MBM29LV800TA-70PF MBM29LV800TA-90PF MBM29LV800TA-70PFTN MBM29LV800TA-90PFTN MBM29LV800TA-70PFTR MBM29LV800TA-90PFTR MBM29LV800TA-70PBT-SF2 MBM29LV800TA-90PBT-SF2 MBM29LV800TA-90PW MBM29LV800BA-70PF MBM29LV800BA-90PF MBM29LV800BA-70PFTN MBM29LV800BA-90PFTN MBM29LV800BA-70PFTR MBM29LV800BA-90PFTR MBM29LV800BA-70PBT-SF2 MBM29LV800BA-90PBT-SF2 MBM29LV800BA-90PW 50 /MBM29LV800BA -70/-90 Package Access Time 44-pin plastic SOP (FPT-44P-M16) 48-pin plastic TSOP (1) (FPT-48P-M19) (Normal Bend) 48-pin plastic TSOP (1) (FPT-48P-M20) (Reverse Bend) ...

Page 51

... MBM29LV800TA MBM29LV800 T A -70 PFTN DEVICE NUMBER/DESCRIPTION MBM29LV800 8Mega-bit (1M 3.0 V-only Read, Program, and Erase /MBM29LV800BA -70/-90 PACKAGE TYPE PFTN = 48-Pin Thin Small Outline Package (TSOP) Normal Bend PFTR = 48-Pin Thin Small Outline Package (TSOP) Reverse Bend PF = 44-Pin Small Outline Package PBT = 48-Ball Fine Pitch Ball Grid Array ...

Page 52

... Note 2 : Pins width and pins thickness include plating thickness. LEAD No. 1 INDEX 24 "A" * 2002 FUJITSU LIMITED F48030S-c-5 /MBM29LV800BA -70/-90 Note Values do not include resin protrusion. Resin protrusion and gate protrusion are 0.15 (.006) Max (each side) . Note 2 : Pins width and pins thickness include plating thickness 20.00 ± 0.20 (.787 ± ...

Page 53

... FUJITSU LIMITED F44023S-c-5-5 C 48-pin plastic FBGA (BGA-48P-M12) 9.00±0.20(.354±.008) INDEX C0.25(.010) 0.10(.004) 2001 FUJITSU LIMITED B48012S-c-3-3 C /MBM29LV800BA -70/-90 +0.03 0.17 –0.04 +.001 .007 –.002 23 16.00±0.20 (.630±.008) Details of "A" part 13.00±0.10 (.512±.004) 2.35± ...

Page 54

... MBM29LV800TA (Continued) 48-pin plastic SCSP (WLP-48P-M03) 7.06±0.10(.278±.004) INDEX AREA (LASER MARKING) 0.10(.004 2001 FUJITSU LIMITED W48003S-c-1 /MBM29LV800BA -70/-90 0.50(.020) Y TYP 3.52±0.10 (2.50=0.50x5) (.139±.004) ((.098=.020x5)) 0.50(.020) TYP X 1.00(.039) Max. 0.25(.010) (Stand off) Min. -70/-90 (3.50=0.50x7) ((.138=.020x7)) (0 ...

Page 55

... If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan. F0211 FUJITSU LIMITED Printed in Japan /MBM29LV800BA -70/-90 ...

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