CY62128BLL-70ZAC Cypress Semiconductor Corporation., CY62128BLL-70ZAC Datasheet

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CY62128BLL-70ZAC

Manufacturer Part Number
CY62128BLL-70ZAC
Description
128K x 8 Static RAM
Manufacturer
Cypress Semiconductor Corporation.
Datasheet
1.CY62128BLL-55ZC.pdf (13 pages)
28B MoBL
®
Features
Functional Description
The CY62128B is a high-performance CMOS static RAM or-
ganized as 131,072 words by 8 bits. Easy memory expansion
is provided by an active LOW Chip Enable (CE
HIGH Chip Enable (CE
and three-state drivers. This device has an automatic
Cypress Semiconductor Corporation
Document #: 38-05300 Rev. **
• 4.5V–5.5V operation
• CMOS for optimum speed/power
• Low active power (70 ns, LL version)
• Low standby power (70 ns, LL version)
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE
CE 1
CE 2
WE
Logic Block Diagram
OE
— 82.5 mW (max.) (15 mA)
— 110 W (max.) (15 A)
V
A
CE
WE
A
A
A
A
A
NC
CC
A
A 0
A 1
A 2
A 3
A 4
A 5
A 6
A 7
A 8
A
A
A
16
A
A
12
14
15
13
11
7
4
5
6
2
8
9
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
(not to scale)
Reverse TSOP I
INPUT BUFFER
Top View
512x 256x 8
DECODER
COLUMN
ARRAY
2
), an active LOW Output Enable (OE),
POWER
DOWN
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
1
, CE
A
A
A
A
I/O
I/O
I/O
GND
I/O
I/O
I/O
I/O
I/O
CE
A
OE
3
2
1
0
10
0
1
2
3
4
5
6
7
1
2
•
CE
V
, and OE options
A
A
WE
A
A
A
A
NC
A
A
CC
A
A
A
A
11
13
15
16
14
12
9
8
2
7
6
5
4
3901 North First Street
1
25
26
27
28
29
30
31
32
1
2
3
4
5
6
7
8
), an active
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
(not to scale)
Top View
STSOP
power-down feature that reduces power consumption by more
than 75% when deselected.
Writing to the device is accomplished by taking Chip Enable
One (CE
able Two (CE
through I/O
address pins (A
Reading from the device is accomplished by taking Chip En-
able One (CE
Write Enable (WE) and Chip Enable Two (CE
these conditions, the contents of the memory location speci-
fied by the address pins will appear on the I/O pins.
The eight input/output pins (I/O
high-impedance state when the device is deselected (CE
HIGH or CE
during a write operation (CE
The CY62128B is available in a standard 450-mil-wide SOIC,
32-pin TSOP type I and STSOP packages.
•
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
1
9
) and Write Enable (WE) inputs LOW and Chip En-
Pin Configurations
7
San Jose
2
) is then written into the location specified on the
OE
A
CE
I/O
I/O
I/O
I/O
I/O
GND
I/O
I/O
I/O
A
A
A
A
10
0
1
2
3
2
LOW), the outputs are disabled (OE HIGH), or
1
7
6
5
4
3
2
1
0
1
G g
) input HIGH. Data on the eight I/O pins (I/O
I/O 0
I/O 1
I/O 2
) and Output Enable (OE) LOW while forcing
gnc
G ND
A 16
A 14
A 12
NC
GN
0
A 7
A 6
A 5
A 4
A 3
A 2
A 1
A 0
through A
Top View
CE
V
WE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A
A
A
A
A
A
NC
A
A
CC
A
A
A
A
128K x 8 Static RAM
11
13
15
16
14
12
SOIC
9
8
2
7
6
5
4
•
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
1
CY62128B MoBL
CA 95134
LOW, CE
).
CE 2
A 10
CE 1
I/O 7
I/O 6
I/O 5
I/O 4
I/O 3
V
A 15
WE
A 13
A 8
A 9
A 11
OE
CC
0
through I/O
(not to scale)
Top View
TSOP I
Revised June 19, 2002
2
HIGH, and WE LOW).
•
7
) are placed in a
2
) HIGH. Under
408-943-2600
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
25
OE
A
CE
I/O
I/O
I/O
I/O
I/O
I/O
GND
I/O
I/O
I/O
A
A
A
A
10
0
1
2
3
6
7
6
5
4
3
2
1
0
1
®
0
1

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CY62128BLL-70ZAC Summary of contents

Page 1

MoBL Features • 4.5V–5.5V operation • CMOS for optimum speed/power • Low active power (70 ns, LL version) — 82.5 mW (max.) (15 mA) • Low standby power (70 ns, LL version) — 110 W (max.) (15 A) ...

Page 2

Selection Guide Maximum Access Time Maximum Operating Current ( Maximum CMOS Standby Current (I Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) Storage Temperature ................................. – +150 C ...

Page 3

Electrical Characteristics Over the Operating Range Parameter Description V Output HIGH Voltage OH V Output LOW Voltage OL V Input HIGH Voltage IH [1] V Input LOW Voltage IL I Input Load Current IX I Output Leakage OZ Current I ...

Page 4

AC Test Loads and Waveforms R1 1800 5V OUTPUT OUTPUT R2 100 pF 990 INCLUDING JIG AND SCOPE (a) Equivalent to: THÉVENIN EQUIVALENT 639 OUTPUT [6] Switching Characteristics Over the Operating Range Parameter READ CYCLE t Read Cycle Time RC ...

Page 5

Data Retention Characteristics Parameter Description V V for Data Retention Data Retention Current Ind.’l CCDR I Data Retention Current Com. CCDR [3] t Chip Deselect to Data Retention Time CDR [3] t Operation Recovery Time R Switching ...

Page 6

Switching Waveforms (continued) Write Cycle No Controlled ADDRESS DATA I/O Write Cycle No. 2 (WE Controlled, OE HIGH During Write) ADDRESS ...

Page 7

Switching Waveforms (continued) Write Cycle No.3 (WE Controlled, OE LOW) ADDRESS NOTE 16 DATAI/O Truth Table High High ...

Page 8

... CY62128BLL-55SI CY62128BLL-55SC CY62128BLL-55ZI CY62128BLL-55ZC CY62128BLL-55ZAI CY62128BLL-55ZAC CY62128BLL-70ZRI CY62128BLL-70ZRC 70 CY62128BLL-70SI CY62128BLL-70SC CY62128BLL-70ZI CY62128BLL-70ZC CY62128BLL-70ZAI CY62128BLL-70ZAC CY62128BLL-70ZRI CY62128BLL-70ZRC Document #: 38-05300 Rev. ** Package Name Package Type S34 32-Lead 450-Mil SOIC S34 32-Lead 450-Mil SOIC Z32 32-Lead TSOP Type I Z32 32-Lead TSOP Type I ZA32 32-Lead STSOP Type I ...

Page 9

Package Diagrams Document #: 38-05300 Rev. ** 32-Lead (450 Mil) Molded SOIC S34 ® CY62128B MoBL 51-85081-A Page ...

Page 10

Package Diagrams (continued) 32-Lead Thin Small Outline Package Type I (8x20 mm) Z32 Document #: 38-05300 Rev. ** ® CY62128B MoBL 51-85056-*D Page ...

Page 11

Package Diagrams (continued) 32-Lead Shrunk Thin Small Outline Package (8x13.4 mm) ZA32 Document #: 38-05300 Rev. ** ® CY62128B MoBL 51-85094-*D Page ...

Page 12

Package Diagrams (continued) 32-Lead Reverse Thin Small Outline Package ZR32 Document #: 38-05300 Rev. ** © Cypress Semiconductor Corporation, 2002. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of ...

Page 13

Document Title: CY62128B MoBL Document Number: 38-05300 Issue REV. ECN NO. Date ** 116566 06/20/02 Document #: 38-05300 Rev. ** ® 128K x 8 Static RAM Orig. of Change DSG Change from Spec number: 38-00524 to 38-05300 CY62128B MoBL Description ...

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