K4E151611D-TL60 Samsung, K4E151611D-TL60 Datasheet

no-image

K4E151611D-TL60

Manufacturer Part Number
K4E151611D-TL60
Description
DRAM Chip: EDO: 2MByte: 5V Supply: Commercial: TSOP II: 50-Pin
Manufacturer
Samsung
Datasheet

Specifications of K4E151611D-TL60

Case
TSOP
K4E171611D, K4E151611D
K4E171612D, K4E151612D
This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of
memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K
Ref.), access time (-45, -5 0 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features
of this family. All of this family have CAS -before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-
refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung s advanced CMOS pro-
cess to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer,
personal computer and portable machines.
FEATURES
• Part Identification
• Active Power Dissipation
• Refresh Cycles
• Performance Range
Speed
K4E171611D
K4E171612D
K4E151611D
K4E151612D
-45
-50
-60
- K4E171611D-J(T) (5V, 4K Ref.)
- K4E151611D-J(T) (5V, 1K Ref.)
- K4E171612D-J(T) (3.3V, 4K Ref.)
- K4E151612D-J(T) (3.3V, 1K Ref.)
Speed
-45
-50
-60
Part
NO.
45ns
50ns
60ns
t
RAC
360
324
288
4K
3.3V
3.3V
V
13ns
15ns
17ns
t
5V
5V
CAC
CC
3.3V
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
Refresh
540
504
468
1K
cycle
104ns
69ns
84ns
4K
1K
t
RC
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
16ns
20ns
25ns
t
550
495
440
Refresh period
64ms
16ms
4K
Nor-
HPC
5V
Unit : mW
Remark
5V/3.3V
5V/3.3V
5V/3.3V
128ms
L-ver
825
770
715
1K
DESCRIPTION
(A0 - A9)
(A0 - A9)
A0-A11
A0 - A7
Note)
UCAS
LCAS
RAS
W
*1
*1
*1
: 1K Refresh
FUNCTIONAL BLOCK DIAGRAM
• Extended Data Out Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in plastic SOJ 400mil and TSOP(II) packages
• Single +5V 10% power supply (5V product)
• Single +3.3V 0.3V power supply (3.3V product)
(Fast Page Mode with Extended Data Out)
Control
Clocks
Row Address Buffer
Col. Address Buffer
Refresh Counter
Refresh Control
Refresh Timer
VBB Generator
Column Decoder
Memory Array
1,048,576 x16
Row Decoder
Cells
CMOS DRAM
Vcc
Vss
Data out
Data out
Data in
Data in
Lower
Lower
Buffer
Buffer
Upper
Buffer
Upper
Buffer
OE
DQ15
DQ0
DQ7
DQ 8
to
to

Related parts for K4E151611D-TL60

K4E151611D-TL60 Summary of contents

Page 1

... It may be used as graphic memory unit for microcomputer, personal computer and portable machines. FEATURES • Part Identification - K4E171611D-J(T) (5V, 4K Ref.) - K4E151611D-J(T) (5V, 1K Ref.) - K4E171612D-J(T) (3.3V, 4K Ref.) - K4E151612D-J(T) (3.3V, 1K Ref.) • Active Power Dissipation 3.3V Speed ...

Page 2

... K4E171611D, K4E151611D K4E171612D, K4E151612D • K4E17(5)1611(2)D DQ0 DQ1 3 DQ2 4 5 DQ3 DQ4 7 8 DQ5 DQ6 9 DQ7 10 11 N RAS 14 15 *A11(N.C) *A10(N. *A10 and A11 are N.C for K4E151611(2)D(5V/3.3V, 1K Ref. product 400mil 42 SOJ ...

Page 3

... K4E171611D, K4E151611D K4E171612D, K4E151612D ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability ...

Page 4

... K4E171611D, K4E151611D K4E171612D, K4E151612D DC AND OPERATING CHARACTERISTICS Symbol Power I Don t care Normal I Don t care Don t care Don t care Normal I Don t care Don t care Don t care Don t care CCS Operating Current (RAS and UCAS, LCAS, Address cycling @t ...

Page 5

... Read command set-up time Read command hold time referenced to CAS Read command hold time referenced to RAS Write command hold time Write command pulse width Write command to RAS lead time Write command to CAS lead time * K4E151611D-TC(L)45 (5V, 1K Refresh) only =5V or 3.3V, f=1MHz) Symbol C IN1 C IN2 ...

Page 6

... W to data delay OE to CAS hold time CAS hold time precharge time W pulse width (Hyper Page Cycle) RAS pulse width (C-B-R self refresh) RAS precharge time (C-B-R self refresh) CAS hold time (C-B-R self refresh) * K4E151611D-TC45 (5V, 1K Refresh) only -45 Symbol Min Max Min 0 0 ...

Page 7

... K4E171611D, K4E151611D K4E171612D, K4E151612D NOTES An initial pause of 200us is required after power-up followed by any 8 RAS -only refresh or CAS-before-RAS refresh cycles 1. before proper device operation is achieved. Input voltage levels are Vih/Vil Transition times are measured between V Measured with a load equivalent to 2 TTL(5V)/1TTL(3.3V) loads and 100pF. ...

Page 8

... K4E171611D, K4E151611D K4E171612D, K4E151612D are referenced to the earlier CAS falling edge. 11. ASC CAH 12 specified from the later CAS rising edge in the previous cycle to the earlier CAS falling edge in the next cycle referenced to the later CAS falling edge at word read-modify-write cycle. ...

Page 9

... K4E171611D, K4E151611D K4E171612D, K4E151612D WORD READ CYCLE RAS UCAS LCAS ASR DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH CRP t RCD t CSH CRP t RCD t RAD ...

Page 10

... K4E171611D, K4E151611D K4E171612D, K4E151612D LOWER BYTE READ CYCLE NOTE : D = OPEN RAS UCAS LCAS ASR DQ0 ~ DQ7 DQ8 ~ DQ15 RAS CRP t CSH CRP t RCD ...

Page 11

... K4E171611D, K4E151611D K4E171612D, K4E151612D UPPER BYTE READ CYCLE NOTE : D = OPEN RAS UCAS LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH CRP t RCD CRP ...

Page 12

... K4E171611D, K4E151611D K4E171612D, K4E151612D WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH ...

Page 13

... K4E171611D, K4E151611D K4E171612D, K4E151612D LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...

Page 14

... K4E171611D, K4E151611D K4E171612D, K4E151612D UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...

Page 15

... K4E171611D, K4E151611D K4E171612D, K4E151612D WORD WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS ...

Page 16

... K4E171611D, K4E151611D K4E171612D, K4E151612D LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS ...

Page 17

... K4E171611D, K4E151611D K4E171612D, K4E151612D UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...

Page 18

... K4E171611D, K4E151611D K4E171612D, K4E151612D WORD READ - MODIFY - WRITE CYCLE RAS UCAS LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RAS t t RCD ...

Page 19

... K4E171611D, K4E151611D K4E171612D, K4E151612D LOWER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 RAS t t RCD RSH ...

Page 20

... K4E171611D, K4E151611D K4E171612D, K4E151612D UPPER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 I/OL t RAS t t RCD RSH ...

Page 21

... K4E171611D, K4E151611D K4E171612D, K4E151612D HYPER PAGE MODE WORD READ CYCLE RAS CRP UCAS CRP LCAS ASR RAH ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...

Page 22

... K4E171611D, K4E151611D K4E171612D, K4E151612D HYPER PAGE MODE LOWER BYTE READ CYCLE RAS UCAS LCAS ASR RAH ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...

Page 23

... K4E171611D, K4E151611D K4E171612D, K4E151612D HYPER PAGE MODE UPPER BYTE READ CYCLE RAS CRP UCAS CRP LCAS ASR ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...

Page 24

... K4E171611D, K4E151611D K4E171612D, K4E151612D HYPER PAGE MODE WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW DQ0 ~ DQ7 ...

Page 25

... K4E171611D, K4E151611D K4E171612D, K4E151612D HYPER PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS LCAS ASR t RAH ADDR DQ0 ~ DQ7 ...

Page 26

... K4E171611D, K4E151611D K4E171612D, K4E151612D HYPER PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ADDR DQ0 ~ DQ7 ...

Page 27

... K4E171611D, K4E151611D K4E171612D, K4E151612D HYPER PAGE MODE WORD READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR ASC ROW DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 ...

Page 28

... K4E171611D, K4E151611D K4E171612D, K4E151612D HYPER PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE RAS UCAS LCAS RAD t t ASR ASC ROW DQ0 ~ DQ7 ...

Page 29

... K4E171611D, K4E151611D K4E171612D, K4E151612D HYPER PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS RAD t t ASR ROW DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 ...

Page 30

... K4E171611D, K4E151611D K4E171612D, K4E151612D HYPER PAGE READ AND WRITE MIXED CYCLE RAS UCAS LCAS t RAD RAH t ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 I/OL t RASP t t READ( ...

Page 31

... K4E171611D, K4E151611D K4E171612D, K4E151612D RAS - ONLY REFRESH CYCLE NOTE : Don t care OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW ADDR IL CAS - BEFORE - RAS REFRESH CYCLE NOTE : OE Don t care ...

Page 32

... K4E171611D, K4E151611D K4E171612D, K4E151612D HIDDEN REFRESH CYCLE ( READ ) RAS CRP UCAS LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RCD RSH ...

Page 33

... K4E171611D, K4E151611D K4E171612D, K4E151612D HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS ...

Page 34

... K4E171611D, K4E151611D K4E171612D, K4E151612D CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : Don t care RAS UCAS LCAS DQ0 ~ DQ7 CEZ DQ8 ~ DQ15 TEST MODE IN CYCLE NOTE : Don t care ...

Page 35

... K4E171611D, K4E151611D K4E171612D, K4E151612D PACKAGE DIMENSION 42 SOJ 400mil #42 #1 0.0375 (0.95) 50(44) TSOP(II) 400mil 0.034 (0.875) 1.091 (27.71) MAX 1.070 (27.19) 1.080 (27.43) 0.050 (1.27) 0.026 (0.66) 0.032 (0.81) 0.015 (0.38) 0.021 (0.53) 0.841 (21.35) MAX 0.821 (20.85) 0.829 (21.05) 0.0315 (0.80) 0.002 (0.05) 0.010 (0.25) 0.018 (0.45) CMOS DRAM Units : Inches (millimeters) 0.027 (0.69) MIN Units : Inches (millimeters) ...

Related keywords