MB81N643289-60FN Fujitsu, MB81N643289-60FN Datasheet
MB81N643289-60FN
Related parts for MB81N643289-60FN
MB81N643289-60FN Summary of contents
Page 1
... The MB81N643289 is designed to reduce the complexity of using a standard dynamic RAM (DRAM) which requires many control signal timing constraints. The MB81N643289 uses Double Data Rate (DDR) where data bandwidth is twice of fast speed compared with regular SDRAMs ...
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... CAS latency • Write latency (Write command to data input) = CAS latency -1 PACKAGE Package and Ordering Information – 86-pin plastic (400 mil) TSOP-II, order as MB81N643289- 2 Preliminary (AE1E) • Byte write control by DM • Page Close Power Down Mode • Distributed Auto-refresh cycle • ...
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... MB81N643289-50/-60 86-Pin TSOP(II) (TOP VIEW ...
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... I/O DATA DQ BUFFER REGISTER DQ & 31 DQS DQS to GENERA- 0 DQS TOR DDQ SSQ 4 Preliminary (AE1E) Fig. 1 – MB81N643289 BLOCK DIAGRAM To each block CONTROL SIGNAL LATCH MODE REGISTER 11 COLUMN ADDRESS 7 COUNTER 32 Clock Buffer DLL Bank-7 Bank-1 Bank-0 RAS CAS WE DRAM CORE (2048 x 128 x 32) ...
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... Either PC or PCA command and MRS or EMRS command are required after power up. *8. MRS or EMRS command should only be issued after all banks have been page closed (PC or PCA command), and DQs are in Hi-Z. Refer to STATE DIAGRAM. *9. Refer to MODE REGISTER TABLE. MB81N643289-50/-60 Symbol PD CS RAS CAS DESL ...
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... MB81N643289-50/-60 FUNCTION TRUTH TABLE (continued) DM TRUTH TABLE (Effective during Write mode) Function Command Data Mask for MASK0 0 7 Data Mask for MASK1 8 15 Data Mask for MASK2 16 23 Data Mask for MASK3 TRUTH TABLE Current Function ...
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... Bank Active MB81N643289-50/-60 Address Command X X DESL H X NOP L — — H BA, CA, AC RD/RDA L BA, CA, AC WR/WRA H BA, RA ACTV L BA BA, AC PCA H X REF/SELF L MODE ...
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... MB81N643289-50/-60 FUNCTION TRUTH TABLE (Continued) OPERATION COMMAND TABLE (Continued) Current CS RAS CAS WE State Read Write ...
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... Write with Auto-Close MB81N643289-50/-60 Address Command X X DESL H X NOP L — — H BA, CA, AC RD/RDA L BA, CA, AC WR/WRA H BA, RA ACTV L BA BA, AC PCA H X REF/SELF L MODE ...
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... MB81N643289-50/-60 FUNCTION TRUTH TABLE (Continued) OPERATION COMMAND TABLE (Continued) Current CS RAS CAS WE State Page Close Bank Activating ...
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... Refreshing MB81N643289-50/-60 Address Command X X DESL H X NOP L — — H BA, CA, AC RD/RDA L BA, CA, AC WR/WRA H BA, RA ACTV L BA BA, AC PCA H X REF/SELF L MODE MRS/EMRS ...
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... MB81N643289-50/-60 FUNCTION TRUTH TABLE (Continued) OPERATION COMMAND TABLE (Continued) Current CS RAS CAS WE State Mode Register Setting Abbreviations Row Address CA = Column Address AC = Auto Close Notes:*13. All entries assume the PD was High during the proceeding clock cycle and the current clock cycle. ...
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... Power Down MB81N643289-50/-60 RAS CAS WE Address Invalid Exit Self-refresh (Idle after Exit Self-refresh (Idle after Illegal Illegal L ...
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... MB81N643289-50/-60 FUNCTION TRUTH TABLE (continued) COMMAND TRUTH TABLE FOR PD (continued) PD Current CS State (n-1) (n) All Banks Idle Bank Active Preliminary (AE1E) RAS CAS WE Address ...
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... X *18. PDEN and SELF command should only be issued after the last read data have been appeared on DQ. *19. The Clock Suspend mode is not supported on this device and it is illegal brought to Low during the Burst Read or Write mode. MB81N643289-50/-60 RAS CAS WE Address ...
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... MB81N643289-50/-60 STATE DIAGRAM MINIMUM CLOCK LATENCY OR DELAY TIME FOR SINGLE BANK OPERATION Second command (same bank) First command MRS l l RSC RSC ACTV RD * RDA RDA RDA WR *5 WRA l l WAL WAL * PCL PCL *4 PCA t t PCAL PCAL ...
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... Assume the other bank( active state and l *8. Assume the other bank( active state and t *9. Second command have to follow the minimum clock latency or delay time of single bank operation in other bank (second command is asserted.) *10. Assume other banks are not in RD/RDA/WR/WRA state. Illegal Command. MB81N643289-50/- ...
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... MB81N643289-50/-60 STATE DIAGRAM (continued) Fig. 2 – STATE DIAGRAM (Simplified for Single Bank Operation) POWER DOWN MRS MODE REGISTER WRITE PAGE CLOSE WRITE PAGE OPEN 18 Preliminary (AE1E) PDEN SELF PDEX IDLE (Standby ACTV PCA WRA RDA WRA ACTIVE WR RD DEFINITION OF ALLOWS ...
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... Memory and provides very fast random cycle time, low latency and low power consumption than regular DRAMs. CLOCK (CLK, CLK) The MB81N643289 adopts differential clock scheme. CLK is a master clock and its rising edge is used to latch all command and address inputs. CLK is a complementary clock input. ...
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... Address input selects an arbitrary location of a total of 2,097,152 words of each memory cell matrix within each bank. A total of twenty address input signals are required to decode such a matrix. The MB81N643289 adopts an address multiplexer in order to reduce the pin count of the address line Bank Active command (ACTV), eleven ...
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... FUNCTIONAL DESCRIPTION (continued) BURST MODE OPERATION AND BURST TYPE The burst mode provides faster memory access and MB81N643289 read and write operations are burst oriented. The burst mode is implemented by keeping the same Row address and by automatic strobing Column address in every single clock edge till programmed burst length(BL). Access time of burst mode is specified as t column address counter operation is determined by a mode register which defines burst type(BT) and burst count length(BL bits of boundary ...
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... The Self-refresh mode is entered by applying an Auto-refresh command in conjunction with PD = Low (SELF). Once MB81N643289 enters the self-refresh mode, all inputs except for PD can be either logic high or low level state and outputs will High-Z state. During Self-refresh mode Low should be maintained. SELF command should only be issued after last read data has been appeared on DQ ...
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... LOCK command input at step-10. *2. The Mode Register Set command (MRS) can be issued before two Auto-refresh cycle (REF). POWER-DOWN The MB81N643289 uses multiple power supply voltage required to follow the reversed sequence of above Power On Sequence. 1. Take all input signals Deapply V ...
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... MB81N643289-50/-60 FUNCTIONAL DESCRIPTION (continued) Fig. 3 – SDRAM READ TIMING EXAMPLE (@ CL=2 & BL=2) <SDRAM > t0 CLK (external) Command RD Stored by CLK input Hi-Z DATA < DDR SDRAM > t0 CLK CLK Command RD Stored by CLK input Hi-Z DQS Hi-Z DATA 24 Preliminary (AE1E Output in every rising CLK edge t0.5 t1 t1.5 t2 High ...
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... ADDRESS EXTENDED MODE REGISTER Notes: *1. A combination *2. This field must be set as 1. *3. A combination of BA 1-2 *4. The RESERVED field must be set as 0. *5. Write latency (WL) = CL-1 MB81N643289-50/- CAS Latency (CL ...
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... MB81N643289-50/-60 ABSOLUTE MAXIMUM RATINGS (See WARNING) Parameter Voltage of V Supply Relative Voltage at Any Pin Relative to V Short Circuit Output Current Power Dissipation Storage Temperature WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. ...
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... ISO V SS CAPACITANCE Parameter Input Capacitance, Address & Control Input Capacitance, CLK & CLK Input Capacitance I/O Capacitance MB81N643289-50/-60 VIH VIL max VIL -1.0V *2. Undershoot limit 1.0V for pulse width < acceptable, SS pulse width measured at 50% of pulse amplitude. of the transmitting device. ...
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... Input Leakage Current (any input) Output Leakage Current V Current REF MB81N643289-50 Operating Current (Average Power Supply Current) MB81N643289-60 MB81N643289-50 Standby Current MB81N643289-60 Power Down Current MB81N643289-50 Active Standby Current (Power Supply Current) MB81N643289-60 28 Preliminary (AE1E) Symbol Condition V = 2.3V for min, 2.7V for max DDQ *4 ...
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... Supply Current) MB81N643289-60 MB81N643289-50 Auto-refresh Current (Average Power Supply Current) MB81N643289-60 Self-refresh Current (Average Power Supply Current) Notes: *1. All voltages referenced to V *2. DC characteristics are measured after following the POWER-UP INITIALIZATION procedure. *3. I depends on the output termination or load conditions, clock cycle rate, and number of address and DD command change within certain period ...
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... MB81N643289-50/-60 DC CHARACTERISTICS (Continued) OUTPUT CHARACTERISTICS 0.2 0.4 0.6 0.8 0 -10 -20 -30 -40 -50 -60 -70 0 0.2 0.4 0.6 0.8 30 Preliminary (AE1E) Fig. 5 – Pull-down Characteristics Max Min 1.0 1.2 1.4 1.6 1.8 2.0 2.2 V (V) OL Fig. 6 – Pull-up Characteristics Min Max 1.0 1.2 1.4 1.6 1.8 2 Current(mA) OL (V) Min Max 0.4 11.1 11.3 0.8 21.6 22.1 1.2 31.1 32.3 1.6 39.2 41.6 2.0 44.6 49.9 2.4 46.4 56.3 2.8 N/A 55.8 2.4 2.6 2 Current(mA Min ...
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... Parameter Random Cycle Time Active to Page Close Time Page Close Single Bank to Active Page Close All Bank to Active Auto-refresh Cycle Time Auto-refresh Interval Time between Refresh Pause Time after Power-on MB81N643289-50/-60 MB81N643289-50 MB81N643289-60 Symbol Min 5 7.5 MB81N643289-50 MB81N643289-60 Notes Symbol Min ...
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... MB81N643289-50/-60 AC CHARACTERISTICS (continued) AC PARAMETERS (FREQUENCY DEPENDANT) Note *10 Parameter Clock High Time Clock Low Time DQS Low to High Input Transition Setup Time from CLK DQS First Low Input Hold Time (Input Preamble Hold Time) DQS First Low Input Pulse Width (Input Preamble Pulse Width) ...
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... DQS Last Low Output Hold Time (Output Postamble Hold Time) DQS Last Low Output in High-Z from CLK to CLK QS Pulse Width Data Output Valid Time from DQS Data Output skew from DQS DQ Output in Low-Z DQ Output in High-Z MB81N643289-50/- 5ns t = 6ns Symbol Min ...
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... MB81N643289-50/-60 AC CHARACTERISTICS (continued) MINIMUM LATENCY - FIXED VALUES (The latency values on these parameters are fixed regardless of clock period.) Parameter RAS (ACT) to CAS (Read) Delay (minimum) (Applicable to same bank) RAS (ACT) to CAS (Write) Delay (minimum) (Applicable to same bank) Write Command to Read Command Delay Time ...
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... HZ *14. Clock period must satisfy specified t Applicable also if device operating conditions such as supply voltages, case temperature, and/or clock frequency (t difference must be 0.2 ns and under) is changed during any operation. CK MB81N643289-50/-60 (min) and V (max) unless otherwise noted (min) and V IH (AC) Base Value Clock > ...
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... MB81N643289-50/-60 AC CHARACTERISTICS (continued) Fig. 7 – EXAMPLE OF AC TEST LOAD CIRCUIT (2.5 V CMOS Source Termination) Note: By adding appropriate correlation factors to the test conditions, tAC and tOH measured when the Output is coupled to the Output Load Circuit are within specifications. AC TEST CONDITIONS Parameters Single-end Input ...
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... Fig. 10 – AC TIMING of Write Mode (Data Strobe, Write Data and Data Mask Input) CLK CLK Input (Controls & Write Command Addresses) t DSPRES DQS Input V REF (@BL= Input (Data&DM) MB81N643289-50/- (AC) V REF V IL (AC used for command and address input REF (AC) ...
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... MB81N643289-50/-60 AC CHARACTERISTICS (continued) Fig. 11 – AC TIMING of Read Mode (Clock to DQS Output Delay Time) CLK CLK t QSLZ (min) DQS Output Hi-Z (@BL= Note: DQS Access time (t The end of t QSPST Fig. 12 – AC TIMING of Read Mode (Clock to Data Output Delay Time) CLK CLK DQ Data ...
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... CLK CLK Command NOP SELF Note: 1. Minimum 2 clock cycles is required for complete power down on clock buffer must maintain High level and clock must be provided during the l l must be satisfied before any command input. LOCK MB81N643289-50/- RAS ...
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... MB81N643289-50/-60 TIMING DIAGRAMS CLK CLK l RCD Command ACTV NOP t RAS DQ Hi-Z (Output) @ DQS Hi-Z (Output) @ Hi-Z (Output) @ DQS Hi-Z (Output) @ Notes Preliminary (AE1E) TIMING DIAGRAM – PAGE MODE READ (Timing assumes Same Bank Access RPL PCL ...
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... DQS Hi-Z (Output) @ RCD Command NOP RDA ACTV DQ Hi-Z (Output) @ DQS Hi-Z (Output) @ Note Latency of Read with Auto Close command. RDA MB81N643289-50/-60 l RDA NOP ACTV NOP RDA NOP RDA NOP ACTV NOP RDA RDA NOP ...
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... MB81N643289-50/-60 (Timing assumes CL=3, BL=4, Same Bank Access) CLK CLK l RCDW Command WR ACTV WL (= CL-1) DQ Hi-Z (Output) t DQS Hi-Z (Output) Notes TIMING DIAGRAM – RANDOM WRITE WITH AUTO-CLOSE (Timing assumes CL=3, BL=4, Same Bank Access) CLK CLK l RCDW Command WRA ACTV WL (= CL-1) DQ Hi-Z (Output) t DQS Hi-Z (Output) Note Latency Write with Auto Close command to next Active command lead time. ...
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... DQS Hi-Z (Output) TIMING DIAGRAM – PAGE MODE WRITE (Timing assumes CL=3, BL=2, Same Bank Access) CLK CLK l l RCDW CCD Command WR WR ACTV DQ Hi (Output DQS Hi-Z (Output) MB81N643289-50/-60 l WAL NOP WPL PCL NOP PC NOP ACTV Preliminary (AE1E) NOP ACTV NOP 43 ...
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... MB81N643289-50/-60 (Timing assumes CL=3, BL=4, Multiple Bank Access) CLK CLK l RCD Command NOP ACTVa ACTVb l RRD DQ Hi-Z (Output) DQS Hi-Z (Output) Notes (Timing assume CL=3, BL=4, Multiple Bank Access) CLK CLK l RCD Command ACTVa ACTVb NOP l RRD DQ Hi-Z (Output) DQS Hi-Z (Output) 44 Preliminary (AE1E) TIMING DIAGRAM – RANDOM READ ...
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... TIMING DIAGRAM – RANDOM WRITE (Timing assumes CL=2, BL=4, Multiple Bank Access) CLK CLK Command NOP ACTVa ACTVb WRa l RRD DQ Hi-Z (Output) WL (Bank a) DQS Hi-Z (Output) MB81N643289-50/-60 l WAL WRAb NOP NOP l CBD (Bank WPL PCL NOP WRb NOP PCa NOP ...
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... MB81N643289-50/-60 TIMING DIAGRAM – RANDOM READ / WRITE (Timing assumes CL=2, BL=2, Same Bank Access) CLK CLK l RCD Command NOP ACTV Hi-Z DQ Hi-Z DQS TIMING DIAGRAM – RANDOM READ / WRITE (Timing assumes CL=2, BL=4, Same Bank Access) CLK CLK Command NOP ACTV Hi-Z DQ Hi-Z DQS 46 Preliminary (AE1E) l RDA RDA NOP ...
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... RCD Command RDa ACTVa ACTVb NOP Hi-Z DQ Hi-Z DQS Notes Latency of Write to Read command in different bank. WRD 2. Data Strobe Input must be applied after or before output of DQS is in High-Z. MB81N643289-50/- RWL WRL WR NOP NOP RWL WRD ...
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... MB81N643289-50/-60 TIMING DIAGRAM – PAGE MODE READ / WRITE (Timing assumes CL=3, BL=4, Multiple Bank Access) CLK CLK l RCD Command ACTVa ACTVb NOP Hi-Z DQ Hi-Z DQS CLK CLK Command NOP ACTV Hi-Z DQ Hi-Z DQS Note: Refresh command can be issued all banks has been closed. 48 Preliminary (AE1E WRD ...
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... CLK PD Command PDEN NOP NOP Hi-Z DQ Note Latency of Power Down Exit to next command input delay. PDEX t must be satisfied for burst refresh and t REF refresh. MB81N643289-50/-60 (Timing assumes CL=2) t PDE l LOCK Don’t Care SELFX NOP (Timing assumes any CL) t PDE l PDEX PDEX NOP ...
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... MB81N643289-50/-60 TIMING DIAGRAM – MODE REGISTER SET CLK CLK Command NOP MRS Note Latency of Mode Register Set to next command lead time. RSC 50 Preliminary (AE1E) (Timing assumes any CL and frequency) l RSC NOP Any NOP ...
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... CLK CLK V PD REF Command NOP , Hi-Z DQ Hi-Z DQS MB81N643289-50/-60 l lock PCAL RSC RSC PCL PCA MRS PC REF EMRS DE DR Preliminary (AE1E REF REFC REF ...
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... MB81N643289-50/-60 SCITT TEST MODE ABOUT SCITT SCITT (Static Component Interconnection Test Technology XNOR circuit based test technology that is used for testing interconnection between SDRAM and SDRAM controller on the printed circuit boards. SCITT provides inexpensive board level test mode in combination with boundary-scan. The basic idea is simple, consider all output of SDRAM as output of XNOR circuit and each output pin has a unique mapping on the input of SDRAM ...
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... The SCITT mode exit command assumes the first CAS rising edge after the test mode entry. *4. Refer the test code table. * CKE = L is necessary to disable outputs in SCITT mode exit. MB81N643289-50/-60 pins before or at the same time as V pins before or at the same time counted from “ ...
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... MB81N643289-50/-60 TEST CODE TABLE and DQS to DQS output data is static and is determined by following logic during the SCITT mode operation RAS xnor RAS xnor RAS xnor RAS xnor RAS xnor ...
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... CAS *1 Notes: *1. SCITT is enabled CAS = L at just power on. *2. All output buffers maintains in High-Z state regardless of the state of control signals as long as the above timing is maintained. *3. CAS must not be brought from High to Low. MB81N643289-50/-60 Description *2 100 s Pause Time *3 Preliminary (AE1E) ...
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... MB81N643289-50/-60 TIMING DIAGRAM – SCITT TEST ENTRY AND EXIT * Pause 100 s CAS CS PD Notes: *1. If entry and exit operation have not been done correctly, CAS, CS, PD pins will have some problems. * PCA commands must not be asserted. Test mode is disable by those commands. ...
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... DQ turn to Low-Z at CS=L and PD DQS to DQS 0 3 Memory device output buffer status This is not bus line level MB81N643289-50/-60 Entry CAS must not brought from High to Low High-Z t TLZ High-Z Low-Z Time (a) Time (b) Entry CAS must not brought from High to Low High-Z t ...
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... MB81N643289-50/-60 Test mode Entry Command CAS Under A 1 Check Pins DQS to DQS Preliminary (AE1E) TIMING DIAGRAM – TEST TIMING (1) Test mode Entry t ETD DQ becomes Low-Z at CS=L and PD=H t TCA t TIA t TOH Valid t TLZ Under test t t TIA ...
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... TIH A 0 Under A 1 Check Pins t TIA TOH Valid 0 31 DQS to DQS 0 3 MB81N643289-50/-60 Under test Tested #1 device t TIH t THZ t t TIA TIA t TOH Valid Valid Preliminary (AE1E) Test mode Exit Changed under test devices Tested #2 device t TIH t TCA ...
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... MB81N643289-50/-60 Test mode Entry CAS L CS-# CS-# TIH A 0 Under A 1 Check Pins t TIA Valid 0 31 DQS to DQS Preliminary (AE1E) TIMING DIAGRAM – TEST TIMING (3) Under test Tested #1 device t TIH t t TIA TIA t t TOH TOH Valid Valid ...
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... INDEX LEAD No 22.22 0.10(.875 .004) +0.05 0.22 0.04 0.10(.004) M +.002 .009 .002 0.50(.020)TYP 21.00(.827)REF 1996 FUJITSU LIMITED F86001S-1C-1 C MB81N643289-50/-60 44 Details of "A" part 0.25(.010) 0~8˚ 43 1.20(.047)MAX (Mounting height) "A" 0.10 0.05 0.10(.004) (.004 .002) (STAND OFF) Preliminary (AE1E) 0.45/0.75 (.018/.030) 11.76 0.20(.463 .008) 10.16 0.10(.400 .004) +0.05 ...
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... MB81N643289-50/-60 MEMO 62 Preliminary (AE1E) ...
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... MEMO MB81N643289-50/-60 Preliminary (AE1E) 63 ...
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... MB81N643289-50/-60 FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices 4-1-1, Kamikodanaka Nakahara-ku, Kawasaki-shi Kanagawa 211-8588, Japan Tel: (044) 754-3753 Fax: (044) 754-3332 North and South America FUJITSU MICROELECTRONICS, INC. Semiconductor Division 3545 North First Street San Jose, CA 95134-1804, U ...