QM30TB-2HB MITSUBISHI, QM30TB-2HB Datasheet
QM30TB-2HB
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QM30TB-2HB Summary of contents
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... BuN EuN BvN EvN BwN 98 110 Tab#110, t=0.5 Tab#250, t=0.8 LABEL MITSUBISHI TRANSISTOR MODULES QM30TB-2HB MEDIUM POWER SWITCHING USE • I Collector current .......................... 30A C • V Collector-emitter voltage ......... 1000V CEX • current gain............................. 750 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) 2– ...
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... CE V =600V, I =30A, I =60mA, –I =0. Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) MITSUBISHI TRANSISTOR MODULES QM30TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE Ratings 1000 1000 1000 310 2 300 –40~+150 –40~+125 2500 1 ...
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... BE I =40A =30A C =10A C 10 – (A) B MITSUBISHI TRANSISTOR MODULES QM30TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL =25° =10V CE T =125° = ...
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... COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL 0.4 0.8 10 COLLECTOR-EMITTER REVERSE VOLTAGE QM30TB-2HB INSULATED TYPE 400 600 800 1000 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( =25° =125°C j 1.2 1.6 2.0 2.4 –V ...
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... – FORWARD CURRENT QM30TB-2HB INSULATED TYPE =600V CC I =60mA B1 –I =0. =25° =125°C j – ...