TM200DZ-M MITSUBISHI, TM200DZ-M Datasheet - Page 3

• Manufacturer Part Number: TM200DZ-M
• Manufacturer: MITSUBISHI

PERFORMANCE CURVES
10
10
320
280
240
200
160
120
10
10
10
10
10
80
40
–1
–1
0
MAXIMUM ON-STATE CHARACTERISTIC
7
5
3
2
7
5
3
2
7
5
3
2
4
3
2
7
5
3
2
7
5
3
2
7
5
4
0.5
2
1
0
1
0
10
0
T
I
V
1
AVERAGE ON-STATE CURRENT (A)
GT
100mA
MAXIMUM AVERAGE ON-STATE
RESISTIVE,
INDUCTIVE
LOAD
T
j
GT
2
=25°C
j
=
(SINGLE PHASE HALFWAVE)
=125°C
360°
=3.0V
3
GATE CHARACTERISTICS
40
V
ON-STATE VOLTAGE (V)
1.0
POWER DISSIPATION
V
5
FGM
GATE CURRENT (mA)
GD
7
10
=0.25V
=10V
=30°
80
2
2
P
1.5
G(AV)
3
3.0W
60°
5
120
=
PER SINGLE
ELEMENT
7
10
90°
P
2.0
3
I
GM
FGM
2
160
120°
=10W
3
=4.0A
180°
5
7
200
2.5
10
4
TM200DZ/CZ/PZ-M,-H,-24,-2H
4000
3500
3000
2500
2000
1500
1000
0.25
0.20
0.15
0.10
0.05
130
120
110
100
500
90
80
70
60
50
0
0
10
10
1
0
LIMITING VALUE OF THE AVERAGE
IMPEDANCE (JUNCTION TO CASE)
–3
RATED SURGE (NON-REPETITIVE)
MAXIMUM TRANSIENT THERMAL
0
AVERAGE ON-STATE CURRENT (A)
2
2
MITSUBISHI THYRISTOR MODULES
(SINGLE PHASE HALFWAVE)
2
3
3
40
PER SINGLE
ELEMENT
ON-STATE CURRENT
3
5
5
ON-STATE CURRENT
CONDUCTION TIME
=30°
7
7
(CYCLES AT 60Hz)
10
10
5
HIGH POWER GENERAL USE
1
–2
80
TIME (s)
7
2
2
60° 90°
10
3
3
5
120
7
RESISTIVE,
INDUCTIVE
LOAD
20
360°
10
30
–1
120°
2
160
INSULATED TYPE
3
50
180°
5
70
7
100
200
10
0
Feb.1999