MBN400C20 HITACHI, MBN400C20 Datasheet
MBN400C20
Manufacturer Part Number
MBN400C20
Description
Manufacturer
HITACHI
Datasheet
1.MBN400C20.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBN400C20
Manufacturer:
HITACHI
Quantity:
28
Company:
Part Number:
MBN400C20
Manufacturer:
HITACHI
Quantity:
530
Part Number:
MBN400C20
Manufacturer:
HITACH
Quantity:
20 000
Part Number:
MBN400C20
Quantity:
60
Part Number:
MBN400C20
Quantity:
60
Collector Emitter Cut-Off Current
Gate Emitter Leakage Current
Input Capacitance
Silicon N-channel IGBT
FEATURES
* High thermal fatigue durability.
* low noise due to built-in free-wheeling
*High speed,low loss IGBT module.
*Low driving power due to low input
*High reliability,high durability module.
* Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
Forward Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Notes: (1)Recommended Value 1.8±0.2/9±1N.m
CHARACTERISTICS (Tc=25
Collector Emitter Saturation Voltage
Gate Emitter Threshold Voltage
Switching Times
Peak Forward Voltage Drop
Reverse Recovery Time
Thermal Impedance
Notes:(3) R
diode - ultra soft fast recovery diode(USFD).
capacitance MOS gate.
IGBT MODULE
(delta Tc=70°C,N>20,000cycles)
MBN400C33A
(4) Counter arm IGBT V
Item
Determine the suitable R
(overshoot voltage,etc.)with appliance mounted.
G
value is the test condition’s value for decision of the switching times, not recommended value.
Item
IGBT
FWD
Turn On Time
Rise Time
Fall Time
Turn Off Time
Terminals
Mounting
(M4/M8)
(M5)
GE
1ms
1ms
DC
DC
°C
=-15V
)
G
value after the measurement of switching waveforms
Symbol
Rth(j-c)
Rth(j-c)
V
V
Symbol
I
I
GE(TO)
CE(sat)
C
V
GES
t
t
CES
V
V
t
V
t
on
t
off
FM
T
ies
rr
r
I
Pc
f
I
°C
CES
GES
I
I
FM
T
Cp
ISO
stg
-
-
C
F
j
)
°C/W
Unit
mA
(2)Recommended Value 2.6±0.2N.m
nA
nF
ms
ms
V
V
V
OUTLINE DRAWING
Weight: 720 (g)
Unit
V
N.m
°C
°C
W
Min.
V
RMS
V
A
A
4.0
-
-
-
-
-
-
-
-
-
-
-
-
4- 5.8
2-M8
2-M4
Typ.
4.5
5.5
1.6
2.3
50
2.1
3.4
3.0
0.5
-
-
-
-
0.025
Max.
±200 V
0.05
5.5
7.0
2.6
3.2
2.8
5.3
4.0
0.9
4.0 V
-
E
TERMINALS
G
E
I
V
V
V
L=150nH
R
V
-Ic=400A,V
Vcc=1,650V,-Ic=400A,L=150nH,
Tc=125°C (4)
C
CE
GE
CE
CE
CC
G
GE
=400A,V
=10W
5,400(AC 1 minute)
=3,300V,V
=10V, I
=10V,V
=±20V,V
=1,650V,Ic=400A
=±15V Tc=125°C
MBN400C33A
-40 ~ +125
-40 ~ +125
C
3,300
4,000
Test Conditions
GE
C
400
GE
Junction to case
±20
400
800
800
GE
(3)
CE
=15V
=400mA
2/10
=0V,f=100KHz
=0V
2.8
GE
=0V
=0V
PDE-N400C33A-0
(2)
(1)
Unit in mm
Related parts for MBN400C20
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Silicon N-Channel Power MOS FET Module
Manufacturer:
HITACHI
Datasheet:
Part Number:
Description:
High Speed Power Switching
Manufacturer:
HITACHI
Datasheet:
Part Number:
Description:
Silicon N-Channel IGBT
Manufacturer:
HITACHI
Datasheet:
Part Number:
Description:
IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES
Manufacturer:
HITACHI
Datasheet:
Part Number:
Description:
IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES
Manufacturer:
HITACHI
Datasheet:
Part Number:
Description:
IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES
Manufacturer:
HITACHI
Datasheet:
Part Number:
Description:
8MHz V(cc): -0.3 to +7.0V V(in): -0.3 to +0.3V advanced CRT controller (ACRTC)
Manufacturer:
HITACHI
Datasheet:
Part Number:
Description:
65,536-WORD x 4-BIT MULTIPORT CMOS VIDEO RAM
Manufacturer:
HITACHI
Datasheet:
Part Number:
Description:
65,536-WORD x 4-BIT MULTIPORT CMOS VIDEO RAM
Manufacturer:
HITACHI
Datasheet:
Part Number:
Description:
65,536-word ? 4-bit High Speed CMOS Static RAM
Manufacturer:
HITACHI
Datasheet:
Part Number:
Description:
SINGLE CHIP CODEC WITH FILTERS(COMBO)
Manufacturer:
HITACHI
Datasheet:
MBN400C20 Summary of contents
Page 1
IGBT MODULE MBN400C33A Silicon N-channel IGBT FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module. *Low driving power due to low input ...
Page 2
15V 14V 13V 12V 500 Collector to Emitter Voltage Collector current vs. Collector to Emitter voltage 1000 125 C 500 0 0 ...
Page 3
TYPICAL 1 [Conditions] V 1650V,Tc 125 15V, 150nH Inductive Load 0.8 0.6 0.4 0 100 200 300 400 Collector Current I (A) C Turn-off Loss vs. Collector Current 1 [Conditions] V 1650V,Tc ...
Page 4
... Or consult Hitachi’s sales department staff event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to this data sheets. Hitachi ...